2SA2154 Search Results
2SA2154 Price and Stock
Toshiba America Electronic Components 2SA2154MFV-Y,L3FTRANS PNP 50V 0.15A VESM |
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2SA2154MFV-Y,L3F | Digi-Reel | 15,355 | 1 |
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2SA2154MFV-Y,L3F | Reel | 12 Weeks | 8,000 |
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2SA2154MFV-Y,L3F | 7,920 |
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2SA2154MFV-Y,L3F | Reel | 8,000 |
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Toshiba America Electronic Components 2SA2154CT-GR,L3FTRANS PNP 50V 0.1A CST3 |
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2SA2154CT-GR,L3F | Cut Tape | 7,850 | 1 |
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2SA2154CT-GR,L3F | Reel | 12 Weeks | 10,000 |
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2SA2154CT-GR,L3F | 10,235 |
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2SA2154CT-GR,L3F | Reel | 10,000 |
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Toshiba America Electronic Components 2SA2154MFVGR,L3FTRANS PNP 50V 0.15A VESM |
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2SA2154MFVGR,L3F | Digi-Reel | 7,730 | 1 |
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2SA2154MFVGR,L3F | Reel | 12 Weeks | 8,000 |
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2SA2154MFVGR,L3F | 3,460 |
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2SA2154MFVGR,L3F | Reel | 8,000 |
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Toshiba America Electronic Components 2SA2154CT-Y(TPL3)TRANS PNP 50V 0.1A CST3 |
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2SA2154CT-Y(TPL3) | Reel |
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Toshiba America Electronic Components 2SA2154MFV-GR(TPL3TRANS PNP 50V 0.15A VESM |
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2SA2154MFV-GR(TPL3 | Digi-Reel | 1 |
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2SA2154 Datasheets (19)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2154 |
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General Purpose Transistors (Single); Surface Mount Type: Y; Package: fSM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT |
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2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT-GR |
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2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT-GR,L3F |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 50V 0.1A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT-GR(TPL3) |
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2SA2154 - Bipolar Transistors 100mA -50V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT-Y |
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2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154CT-Y(TPL3) |
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2SA2154 - Bipolar Transistors 100mA -50V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154-GR |
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2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154-GR(TPL3) |
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2SA2154 - Bipolar Transistors 100mA -0.3V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV |
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General Purpose Transistors (Single); Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026MFV; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-GR |
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2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFVGR,L3F |
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PNP TRANSISTOR VCEO-50V IC-0.15A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-GR(TPL3) |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-GR(TPL3 |
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2SA2154 - Bipolar Transistors -150mA -50V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2154MFV-Y |
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2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-Y,L3F |
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PNP TRANSISTOR VCEO-50V IC-0.15A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-Y(TPL3) |
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2SA2154 - Bipolar Transistors -150mA -50V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154-Y |
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2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154-Y(TPL3) |
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2SA2154 - Bipolar Transistors 100mA -0.3V | Original |
2SA2154 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C) |
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2SC6026MFV 2SA2154MFV | |
2SA21
Abstract: 2SA2154 2SC6026
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2SA2154 2SC6026 2SA21 2SA2154 2SC6026 | |
2SA2154MFV
Abstract: 2SC6026MFV
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV | |
Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.) |
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2SA2154CT 100mA 2SC6026CT | |
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) |
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2SA2154MFV 2SC6026MFV | |
Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.) |
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2SA2154CT 100mA 2SC6026CT | |
2SA2154MFV
Abstract: 2SC6026MFV
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV | |
Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.) |
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2SA2154CT 100mA 2SC6026CT | |
missile guidance ic
Abstract: 2SA2154 2SC6026
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2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026 | |
2SC6026
Abstract: 2SA2154
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2SA2154 2SC6026 2SC6026 2SA2154 | |
2SA2154MFV
Abstract: 2SC6026MFV 2SA21
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21 | |
Contextual Info: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT 3 2 0.25±0.03 1 Absolute Maximum Ratings (Ta = 25°C) |
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2SC6026CT 2SA2154CT | |
transistor marking hy
Abstract: 2SA2154MFV 2SC6026MFV PCT 245
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2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245 | |
2SA2154MFV
Abstract: 2SC6026MFV
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV | |
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2SA2154MFV
Abstract: 2SC6026MFV
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV | |
2SC6026CT
Abstract: 2SA21 2SA2154CT
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2SC6026CT 2SA2154CT 2SC6026CT 2SA21 2SA2154CT | |
2SC6026
Abstract: 2SA2154 2SA21
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2SC6026 2SA2154 2SC6026 2SA2154 2SA21 | |
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity |
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2SA2154MFV 2SC6026MFV | |
2SA2154MFV
Abstract: 2SC6026MFV
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV | |
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026 |
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2SA2154 2SC6026 | |
2SA2154MFV
Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602 | |
2SA2154
Abstract: 2SC6026
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2SA2154 2SC6026 2SA2154 2SC6026 | |
Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max) |
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2SC6026 2SA2154 04esented | |
2SA21
Abstract: 2SA2154CT 2SC6026CT
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2SA2154CT -100mA 2SC6026CT 2SA21 2SA2154CT 2SC6026CT |