2SA1201 Search Results

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1201 ○ 電力増幅用 ○ 励振段増幅用 単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1201 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package •

Contextual Info: 2SA1201 TOSHIBA 2 SA 1 2 0 1 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage :V C E O = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1—2W (Mounted on Ceramic Substrate) Small Flat Package

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

SOT-89

Abstract: 2SA1201
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -800 mA ICM Collector-base voltage

2SA1201

Abstract: 2SC2881 A1201
Contextual Info: TOSHIBA 2SA1201 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS High Voltage SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 201 Unit in mm 1.6MAX. 4.6MAX. : V q e O = —120V 1.7MAX. High Transition Frequency : fp = 120MHz (Typ.) 0.4 + 0.05 P q = 1 ~ 2W (Mounted on Ceramic Substrate)

SOT890-1

Contextual Info: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

2SA1201

Abstract: 2SA1201-O
Contextual Info: MCC TM Micro Commercial Components 2SA1201 2SA1201-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1201-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic.

2SA1201-O

Contextual Info: MCC TM Micro Commercial Components 2SA1201 2SA1201-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1201-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability

2SA1201-O

Contextual Info: MCC TM Micro Commercial Components 2SA1201-O 2SA1201-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

2SA1201

Abstract: DY TRANSISTOR 2SC2881 PNP TRANSISTOR SOT89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1201-O

Contextual Info: MCC TM Micro Commercial Components 2SA1201-O 2SA1201-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: 2SA1201 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 — — — 2.6 4.25 2.4 3.75 High voltage High transition frequency Complementary to 2SC2881 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol B 3. EMITTER 3 Features 4.6

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2881 NPN SILICON TRANSISTOR V OLT AGE AM PLI FI ER APPLI CAT I ON S POWER AM PLI FI ER APPLI CAT I ON S ̈ FEAT U RES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 ̈ SOT-89

2SA1201

Abstract: 2SC2881 A1201
Contextual Info: 2SA1201 TO SH IBA 2 S A 1 201 TO SHIBA TRANSISTOR PO W ER A M PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage : V^ e q = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate) Small Flat Package

2SA1201-O

Contextual Info: MCC TM Micro Commercial Components 2SA1201-O 2SA1201-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability

2SA1201

Abstract: 2SA1201-O
Contextual Info: MCC TM Micro Commercial Components 2SA1201-O 2SA1201-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.

Contextual Info: SMD Type Product specification 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1201 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: 2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1201 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package •