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    Part ECAD Model Manufacturer Description Download Buy
    CO-142BNCX200-001 Amphenol Cables on Demand Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft Datasheet
    FO-DUALSTLC00-001 Amphenol Cables on Demand Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet
    CS-USBAB00000-001 Amphenol Cables on Demand Amphenol CS-USBAB00000-001 Molded USB 2.0 Cable - Type A-B 1m Datasheet
    CO-174BNCX200-001 Amphenol Cables on Demand Amphenol CO-174BNCX200-001 BNC Male to BNC Male (RG174) 50 Ohm Coaxial Cable Assembly 1ft Datasheet
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    2N7002K_R2_00001 Price and Stock

    PanJit Semiconductor 2N7002K_R2_00001

    MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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    Mouser Electronics 2N7002K_R2_00001
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    NAC 2N7002K_R2_00001 12,000
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    PanJit Semiconductor 2N7002K-R2-00001

    MOSFETs SOT233 N CHAN 60V
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    TTI 2N7002K-R2-00001 Reel 192,000 12,000
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    PanJit Semiconductor 2N7002K_ R2 _00001

    SOT 23/200mW/60V/MOSFET/SMD/ (Alt: 2N7002K_R2_00001)
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    Avnet Silica 2N7002K_ R2 _00001 32 Weeks 12,000
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    2N7002K_R2_00001 Datasheets Context Search

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    2N7002K R1

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF 2N7002K 500mA 200mA 2011/65/EU IEC61249 OT-23 OT-23 2010-REV 2N7002K R1

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF 2N7002K 500mA 200mA 2002/95/EC IEC61249 OT-23 OT-23 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF 2N7002K OT-23 500mA 200mA 2002/95/EC IEC61249 2010-REV

    2N7002K

    Abstract: K72 MARKING SOT-23 2N7002K_R1
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original
    PDF 2N7002K 500mA OT-23 2002/95/EC IEC61249 200mA 2010-REV RB500V-40 2N7002K K72 MARKING SOT-23 2N7002K_R1