2N6923 Search Results

sem 3040

Abstract: sem 3040 ic tvs diode stacking 2N6927 2N6922 2n6927a 2N6926 sem 3040 ic all data
Contextual Info: GENERAL SE MI CON DUCTOR 3918590 GENERAL TS DE iBTlflSTO DOPElbO 95D SEMICONDUCTOR ^ General ^ ^ Sem iconductor ^ • Industries, Ine SQURRE Ti COMPANY • 02160 D 2N6922, 2N6923, 2N6926, 2N6927, 2N6922A 2N6923A 2N6926A 2N6927A 7 -J 3 -/3 HIGH POWER NPN iw tfch

Sprague extralytic

Abstract: 2N6922 2N6923 2N6927 1RF9533 ALI 3101 C 2N6922A 2N6923A 2N6926 2N6926A
Contextual Info: GENERAL SE MI CO ND UCT OR 3918590 TS GENERAL DE iBTlflSTO 95D SEMI CONDUCTOR ^ General ^ ^ Semiconductor ^ Industries, Ine• SQ UARE Ti C O M P A N Y DDDElhD □ 02160 D 2N6922, 2N6923, 2N6926, 2N6927, 2N6922A 2N6923A 2N6926A 2N6927A 7-J3-/3 Swtfth HIGH POWER NPN

2N6922

Abstract: 2N6923A
Contextual Info: . ^ , General ^ Semiconductor ^ • Industries, Inc. HIGH POWER NPN fw/fcfi / ^ / / 2N6922, 2N6922A 2N6923, 2N6923A / I/tRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and rugged­ ness for use in high speed switching systems. This unique series also features General

2n6923

Contextual Info: General Semiconductor Industries, Inc. O NPN T R A N S IS T O R C H IP ” Typical Device Types: GSRU15040, GSRU20040,2N6922, 2N6923 31 " 20 AMP Ultra Fast Switching Bonding Pad Areas Bas« 1 106 x 20 mils Emitter (4) 37.5 X 23 mils Front Metallization: Aluminum

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

TIC125

Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Contextual Info: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

TLP 527

Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
Contextual Info: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673

Contextual Info: SOLID STATE DEVICES INC 50E D • Ö3bb011 Q 0 0 2 n 0 2 SFT6925A NPSM HIGH VOLTAGE HIGH S P E E D POUJER T R A N S I S T O R 6 0 AMPS, 1000V CASE J E D E C STYL-E " T O — 3 WITH . 0 6 0 P I N S ► ► R A T I M Collector-Base Emitter-Base Collector FAX