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    2N6298 Price and Stock

    Microchip Technology Inc 2N6298

    PNP TRANSISTOR
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    Microchip Technology Inc JAN2N6298

    TRANS PNP DARL 60V 8A TO66
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    Microchip Technology Inc JANTX2N6298

    TRANS PNP DARL 60V 8A
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    Microchip Technology Inc JANTXV2N6298

    TRANS PNP DARL 60V 8A TO66
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    Central Semiconductor Corp 2N6298

    Complementary Silicon Darlington Power Transistor 60V 8A 2-Pin TO-66 (Alt: 2N6298)
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    2N6298 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6298 Microsemi PNP Darlington Power Silicon Transistor Original PDF
    2N6298 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6298 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6298 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Central Semiconductor BJT, PNP, Power Transistor, IC 8A - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Mospec POWER TRANSISTORS(8A, 75W) - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Motorola The European Selection Data Book 1976 Scan PDF
    2N6298 Motorola Power Transistor Selection Guide Scan PDF
    2N6298 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6298 Motorola European Master Selection Guide 1986 Scan PDF
    2N6298 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6298 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6298 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6298 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process


    Original
    PDF 2N6298 2N6299 2N6300 2N6301 100mA 2N6299, 2N6301) 100kHz

    2N6299 JANTX

    Abstract: 2N6298 1000C 2N6299
    Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/540 Devices Qualified Level 2N6298 JAN JANTX JANTXV 2N6299 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


    Original
    PDF MIL-PRF-19500/540 2N6298 2N6299 1000C 2N6298 2N6299 JANTX 1000C 2N6299

    Untitled

    Abstract: No abstract text available
    Text: PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage


    Original
    PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 60 V darlington complementary PNP silicon power transistor 12.35 Transistors . Page 1 of 1 Enter Your Part # Home Part Number: 2N6298 Online Store 2N6298 Diodes 60 Transistors V darlington complementary PNP silicon transistor Integrated Circuits Optoelectronics


    Original
    PDF 2N6298 2N6298 com/2n6298

    2n6299

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N6298 JAN, JTX, JTXV 2N6299 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/540 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


    Original
    PDF 2N6298 2N6299 MIL-PRF-19500/540 1000C 2N6298 2N6299 O-213AA)

    2N6298

    Abstract: 1000C 2N6299
    Text: TECHNICAL DATA 2N6298 JAN, JTX, JTXV 2N6299 JAN, JTX, JTXV Processed per MIL-PRF-19500/540 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF 2N6298 2N6299 MIL-PRF-19500/540 1000C 2N6298 2N6299 O-213AA) 1000C

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV


    Original
    PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA O-213AA T4-LDS-0310,

    Untitled

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original
    PDF 2N6298" 2N6298 2N6298-JQR-B

    Untitled

    Abstract: No abstract text available
    Text: 2N6298+JAN Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.750


    Original
    PDF 2N6298

    Untitled

    Abstract: No abstract text available
    Text: 2N6298+JANTX Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.750


    Original
    PDF 2N6298

    Untitled

    Abstract: No abstract text available
    Text: 2N6298+JANTXV Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.750


    Original
    PDF 2N6298

    2N6298

    Abstract: 2N6299
    Text: Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications


    Original
    PDF 2N6298 2N6299 2N6300/6301 2N6298 2N6299

    2N6298

    Abstract: 2N6299
    Text: SavantIC Semiconductor Product Specification 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301 APPLICATIONS ·General purpose power amplifier and low frequency switching applications


    Original
    PDF 2N6298 2N6299 2N6300/6301 2N6298 2N6299

    2N6298

    Abstract: 2N6299
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and


    Original
    PDF 2N6298 2N6299 2N6300/6301 2N6298 2N6299

    2N6298

    Abstract: Darlington 40A 2n6300
    Text: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series types are complementary silicon darlington power transistors manufactured by the epitaxial base process


    Original
    PDF 2N6298 2N6299 2N6300 2N6301 2N6301 100mA Darlington 40A

    Untitled

    Abstract: No abstract text available
    Text: PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage


    Original
    PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA) 2N6298

    2N6300

    Abstract: 2N6301 2N6298
    Text: SavantIC Semiconductor Product Specification 2N6300 2N6301 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications


    Original
    PDF 2N6300 2N6301 2N6298/6299 2N6300 2N6301 2N6298

    2N6298

    Abstract: 2N6298 JAN
    Text: 2N6298 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6298 O213AA) 1-Aug-02 2N6298 2N6298 JAN

    2N6298

    Abstract: 2N6299 2N6300 2N6301
    Text: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )


    OCR Scan
    PDF 2N6298, 2N6299 2N6300, 2N6301 2N6300 2N6299, 2N6301 2N6300 2N6298

    2N6649A

    Abstract: 2N63 2n6301a 2n6353a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 2N6299A @ Ic/ ^ C E min/max @ A/V VcE(Mt) @ I c/I b V @ A/A c <p P fx (MHz) 8.0 750/18000@6/3 2.0@4/.016 300 4.0 80 8.0 750/18000@6/3


    OCR Scan
    PDF 2N6298A 2N6299A 2N6648A 2N6649A 2N6650A 2N6300A 2N6301A 2N6383A 2N6385A 2N6352A 2N63 2n6353a

    2N6352

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE PNP TO-66 Ic VcEO sus VOLTS (max) AMPS ^FE @ ^CE min/max @ A/V @Ic/Iß V @ A/A C<p P Ìt (MHz) 2N6298 60 8.0 750/18000@6/3 2.0@4/.016 300 4.0 2N6299 80 8.0 750/18000@6/3 2.0@4/.016 300 4.0


    OCR Scan
    PDF 2N6298 2N6299 2N6648 2N6649 2N6650 2N6300 2N6301 2N6383 2N6384 2N6385 2N6352

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


    OCR Scan
    PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


    OCR Scan
    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 8.0 2N6299A 80 2N6648A 1*FE @ ^c/ ^CE min/max @ A/V VcE(Ml) @ I c/I b V @ A/A c <p P fr (MHz) 750/18000@6/3 2.0@4/.016 300


    OCR Scan
    PDF 2N6298A 2N6299A 2N6648A 2N6649A 2N6650A 2N6300A 2N6301A 2N6383SISTOR