2N6277 Search Results

2n6277

Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS

2N6277

Abstract: 2N6277 applications
Contextual Info: 2N6277 SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO- 204AE DESCRIPTION: The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS 5O A Ie 1OO A PEAK IB 2O A VeE 15O V Pd is s 25O W @ Te " 25 0C Tj

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6277

Abstract: 2N6274 transistor 2N6274 of transistor 2n6277 1000C 2000C
Contextual Info: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level 2N6274 JAN JANTX JANTXV 2N6277 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N6277

Abstract: 2N6277 applications 2n6275 2n6274 of transistor 2n6277 transistor 0440 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifer and sw itching circuit applications. • • • • • High Collector Emitter Sustaining —

2n6277

Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —

2N6277A

Contextual Info: 2N6277A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6277

Abstract: 2N6274 of transistor 2n6277 MIL-PRF-19500/514 transistor 2N6274 1000C 2000C
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level 2N6274 JAN JANTX JANTXV 2N6277 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N6277 equivalent

Abstract: 2N6277 2N6274 2N6277 applications
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6277

Abstract: 2N6274
Contextual Info: ^ General ^ 5 ^ Semiconductor ^ - Industries, Inc. 2N6274 2N6277 Switch P/m TR A N SISTORS H IG H POWER NPN These do u b le diffu sed, ep itaxial c o lle c to r devices are oxid e passivated. They are designed fo r use in s w itc h in g and m any a m p lifie r a p p lica tio n s. The latest te ch n o lo g ie s are used to

Contextual Info: 2N6277A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

semelab 2N6287

Abstract: 2N6378E
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300

2N6583

Abstract: 2N6736
Contextual Info: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469

2N6277

Abstract: 2N6274 2N6277 applications all ic data all ic datasheet MIL-PRF-19500/514 transistor 2N6274 1000C 2000C 2N6277JAN
Contextual Info: TECHNICAL DATA 2N6274 JAN, JTX, JTXV 2N6277 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/514 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N6277 applications

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

2N6277

Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
Contextual Info: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687

2N6277

Abstract: 2N6277 applications NPN 250W LE17 180v 250w of transistor 2n6277
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

Contextual Info: 2N6277+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)50 Absolute Max. Power Diss. (W)250# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition)75 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)50

Contextual Info: 2N6277+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)50 Absolute Max. Power Diss. (W)250# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition)75 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)50

Contextual Info: m 2N6277 \ \ SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO-204AE DESCRIPTION: 1.550 The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS lc 50 A 100 A PEAK Ib 20 A V ce 150 V P diss 250 W @ Tc = 25 °C

2N6277

Abstract: to204ae
Contextual Info: 2N6277 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

JANTX 2N6340

Abstract: 2N6686 815 transistor 2N6032 Transistor 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS NPN TO-3 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 2N6338A 2N6340 2N6341A 2N6354 2N6510 2N6511 2N6512 2N6676A 2N6677 2N6678A

Contextual Info: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit