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    2N578 Price and Stock

    Microchip Technology Inc 2N5783

    NPN TRANSISTOR
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    Microchip Technology Inc 2N5786

    NPN TRANSISTOR
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    NAC 2N5786 15
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    Microchip Technology Inc 2N5781

    NPN TRANSISTOR
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    Onlinecomponents.com 2N5781
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    Microchip Technology Inc 2N5785

    NPN TRANSISTOR
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    Central Semiconductor Corp 2N5785

    TRANS NPN 50V 3.5A TO-39
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    2N578 Datasheets (165)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N578 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N578 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N578 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N578 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N578 Unknown GE Transistor Specifications Scan PDF
    2N578 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N578 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N578 Unknown Vintage Transistor Datasheets Scan PDF
    2N578 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N578 RCA RCA Transistor and Diode Data Scan PDF
    2N5780 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5780 Motorola The European Selection Data Book 1976 Scan PDF
    2N5780 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5780 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5780 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5781 Central Semiconductor Small Signal Transistors Original PDF
    2N5781 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 Original PDF
    2N5781 API Electronics Short form transistor data Short Form PDF
    2N5781 General Electric Silicon P-N-P epitaxial-base transistor. -80V, 10W. - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 Scan PDF
    2N5781 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2N578 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5781

    Abstract: No abstract text available
    Text: 2N5781 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5781 O205AD) 1-Aug-02 2N5781 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 2.54


    Original     		2N5786 O-205AD) 2N5786-JQR" 2N5786-JQR-B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5783 O205AD) 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5783 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5783 O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)


    Original     		2N5786 200kHz 300ms, PDF

    2N5786

    Abstract: No abstract text available
    Text: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )


    Original     		2N5786 300ms, 2N5786 PDF

    2N5785SMD

    Abstract: No abstract text available
    Text: 2N5785SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original     		2N5785SMD O276AB) 15-Aug-02 2N5785SMD PDF

    2N5781XL

    Abstract: No abstract text available
    Text: 2N5781XL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		2N5781XL O205AA) 20-Aug-02 2N5781XL PDF

    2N5782

    Abstract: No abstract text available
    Text: 2N5782 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5782 O205AD) 1-Aug-02 2N5782 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N5786 • Low Saturation Voltage. High Gain At High Current. • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		2N5786 O-205AD) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5782 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		2N5782 O205AD) 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N5786 • Low Saturation Voltage. High Gain At High Current. • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		2N5786 O-205AD) PDF

    PT8809

    Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita


    Original     		SPC411 STS411 PTC403 PTC403P PTC409 PTC409P PTC402 PTC402P SPC402 PTC423 PT8809 trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340 PDF

    2N5782

    Abstract: No abstract text available
    Text: 2N5782 Silicon P-N-P epitaxial-base transistor. -65V 10W. 16.19 Transis. 1 of 2 Home Part Number: 2N5782 Online Store 2N5782 Diodes Silic o n P-N- P epit ax ial- bas e t rans is to r. -6 5 V 1 0 W.


    Original     		2N5782 com/2n5782 2N5782 PDF

    TA7290

    Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
    Text: H A RR IS S E M I C O N D S E C T O R 5bE D • 4 3 G 2 2 7 1 0 0 4 0 4 7 0 T46 H H A S 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 Rie Number 413 n = 3 3 -o / Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and


    OCR Scan     		2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N57B2, 2NS783 TA7290 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS PDF

    2N5781

    Abstract: No abstract text available
    Text: ÀSII 2N5781 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 3.5 A ib 1.O A VeE -es v pd is s 1O W @ Te $ 25 0C Tj -e5 0C to +2OO 0C Ts t g -e5 0C to +2OO 0C


    OCR Scan     		2N5781 2N5781 PDF

    C2688

    Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
    Text: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786


    OCR Scan     		3a750Ã 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 RCA-2N5781 2N5783 C2688 TA7270 TA7290 2n5784 pnp transistor 2N5784 2n5783 rca 2n5782 RCA tRANSISTOR c2688 PDF

    TA7290

    Abstract: 2N5781 TA7272 2N5784 equivalent 2N5783
    Text: 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: • ■ • ■ Low saturation voltages


    OCR Scan     		2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N5783 TA7290 2N5781 TA7272 2N5784 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N5783 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5783 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -40 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W


    OCR Scan     		2N5783 2N5783 PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N5784 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS V lc 3.5 A Ib 1.0 A 65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W


    OCR Scan     		2N5784 2N5784 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


    OCR Scan     		2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 PDF

    40852

    Abstract: 1431t 70w amplifier 40615 2N5840 2N5954 2N5956 2N5786 2N5838 2N5839
    Text: 2N5786 FAM ILY [n-p-n] silicon [cont'd] f j = 1 MHz min; P j = 10 W max hFE 25 30 32 Output, 3-W Audio Ampli. Output, 5-W Audio Ampli. Output, 7-W Audio Ampli. — A 20-100 20-100 20-100 - - - 1.2 1.2 1.5 Tamp .-° C 1 1 1 25 150 1A 1A 1A _ — - UJ o> 40610


    OCR Scan     		2N5786 2N5838 2N5839 2N5840 2N5840 2N5956 2N5955 2N5954 40852 1431t 70w amplifier 40615 PDF

    2N3055 TO-220

    Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
    Text: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494


    OCR Scan     		2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N3055 TO-220 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C BFT19B 2N5495 PDF

    2N5784

    Abstract: e50c
    Text: ÀSII 2N5784 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 3.5 A ib 1.O A VeE es v pd is s 1O W @ Te # 25 0C Tj -e5 0C to +2OO 0C Ts t g -e5 0C to +2OO 0C


    OCR Scan     		2N5784 2N5784 e50c PDF