2N3823 Search Results

Contextual Info: N-Channel JFET High Frequency Amplifier 2N3823 FE A T U R E S A B S O L U T E M A X IM U M R A T IN G S T a - 2 5 °C u n le ss oth e rw ise n oted • L o w N o is e • L o w C a p a c ita n c e • T r a n s d u c ta n c e U p to 6 5 0 0 p s G a te -S o u rce or G a te -D raln V oltage . -30V

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

2N3823

Contextual Info: <Jnc. ^£.1±E.ij 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELtPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3823 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Strii t PIN I 7 I OI/U o>ib SQUHCC QHAIN MAXIMUM RATINGS Syntlml v.c,.

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E ­ QUENCY UP TO 450MHz. • THE DEVICE IS ALSO

2N3824

Abstract: 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

MPF111 equivalent

Abstract: 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58 MPF109
Contextual Info: 2N3823 n-channel JFET designed for a Siliconix . Performance Curves NRL See Section 5 VHF Am plifiers Oscillators M ixers BEN EFITS • Low Noise N F < 2.5 dB @ 100 MHz TO -72 See Section 7 »ABSO LUTE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) . -3 0 V

Contextual Info: 2N3823+JANTX Transistors N-Channel JFET Military/High-RelY V BR DSS (V)30 V(BR)GSS (V)30Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

3N225

Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Contextual Info: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018

2N3823

Abstract: X2N3823
Contextual Info: N-ChannelJFET High Frequency Amplifier 2N3823 FEATURES ABSO LUTE MAXIMUM RATINGS Ta - 2S°C unless otherwise noted • L o w N oise • L o w C apacitance • Transd uctan ce Up to 6S00ps Gate-Source or Gate-Draln Voltage . -30V

2N3823

Abstract: IEC134 transistor 2N3823
Contextual Info: JV 2N3823 _ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction f ield-effect transistor in a T O -72 metal envelope, intended fo r v.h.f. am plifier and mixer applications in industrial service.

2N3823 equivalent

Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Contextual Info: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage

2N3823 equivalent

Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

2N3823 philips

Abstract: 2N3823 3R2S X451
Contextual Info: PHI LIP S MIE D INTERNATIONAL m 711005b 002b343 3 OIPHIN '' 2N3823 L T-3/-2& N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended fo r v.h.f. am plifier and m ixer applications in industrial service.

2n3823

Contextual Info: 2N3823 N-Channel Silicon Junction Field-effect Transistor 17.89 Transis. 1 of 1 Home Part Number: 2N3823 Online Store 2N3823 Diodes N- C hannel Silic o n J unc tio n Field-effect Trans is to r Transistors

2N3823

Abstract: 2N3822 2N3821 TI 2n3823 2N3021
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3821. 2N3822 2N3823 N-Channel, Depletion Mode Junction Field-Effect Transistors JFETs . . designed for small-signal, lovn-noise amplifier applications. M A X IM U M R A T IN G S Symbol 2N3821 2N3822 2N3823 Unit Drain-Gate Voltage

Contextual Info: B4 9-97 2N3823, 2N3824 N-CHAN NEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR VHF AMPLIFIERS SMALL SIGNAL AMPLIFIERS Absolute maximum ratings at TA = 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2n3823

Contextual Info: CALOGIC 4ÔE CORP D • 1ÔM432E GOGOSTE 7 ■ CGC calore CORPORATION T-Z\-ZS 2N3823 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low Noise • Low Capacitance • Transductance Up to 6500|is Gate-Source or Gate-Drain Voltage . -30V

2N3823

Contextual Info: 2N3823 N-Channel JFET FOR VHF AMPLIFIER OSCILLATOR MIXER A PPLICATIO NS • Noise Figure < 2.5 dB at 100 MHz • Low Capacitance • Transconductance up to 6500 /¿mho ABSOLUTE M A XIM U M RATINGS 2 5 °C Gate-Source Voltage .-30V

Contextual Info: 2N3823 a n-channel JFET designed for S ilic o n ix . Performance Curves NRL See Section 5 VHF Am plifiers Oscillators M ixers B E N E F IT S • Low Noise N F < 2.5 dB @ 100 MHz T O -7 2 See Section 7 » A B SO LU T E M A X IM U M R A T IN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) . -30 V

Contextual Info: * 1 N-Chann High Frequency Am plifier 2N3823 FEATU RES A B S O L U T E M A XIM U M RA TIN G S Ta - 2S°C unless otherwise noted • Low Noise • Low Capacitance • Transductance Up to 6S00ps Gate-Source or Gate-Drain Voltage . -30V

2N3822

Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

UC734

Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Contextual Info: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA

Contextual Info: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823