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    2A200 Search Results

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    2A200 Price and Stock

    Murata Manufacturing Co Ltd GCM1885C2A200FA16D

    CAP CER 20PF 100V C0G/NP0 0603
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    DigiKey GCM1885C2A200FA16D Digi-Reel 7,863 1
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    GCM1885C2A200FA16D Cut Tape 7,863 1
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    GCM1885C2A200FA16D Reel 4,000 4,000
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    TME GCM1885C2A200FA16D 4,000
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    Avnet Abacus GCM1885C2A200FA16D 17 Weeks 4,000
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    Murata Manufacturing Co Ltd GCM1885C2A200JA16D

    CAP CER 20PF 100V C0G/NP0 0603
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    DigiKey GCM1885C2A200JA16D Digi-Reel 6,411 1
    • 1 $0.11
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    GCM1885C2A200JA16D Cut Tape 6,411 1
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    GCM1885C2A200JA16D Reel 4,000 4,000
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    TME GCM1885C2A200JA16D 1,300 1
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    Avnet Abacus GCM1885C2A200JA16D 19 Weeks 4,000
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    KOA Speer Electronics Inc MF1-4DCT52A2002F

    RES 20K OHM 1% 1/4W AXIAL
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    DigiKey MF1-4DCT52A2002F Cut Tape 4,128 1
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    Kyocera AVX Components KGQ21HCG2A200FT

    CAP CER 20PF 100V NP0 0805
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    DigiKey KGQ21HCG2A200FT Digi-Reel 3,575 1
    • 1 $0.51
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    KGQ21HCG2A200FT Cut Tape 3,575 1
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    TE Connectivity RA73F2A200RBTDF

    RA73F 2A 200R 0.1% 1K RL
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    DigiKey RA73F2A200RBTDF Reel 1,000 1,000
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    Mouser Electronics RA73F2A200RBTDF 834
    • 1 $2.21
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    Newark RA73F2A200RBTDF Cut Tape 944 1
    • 1 $2.07
    • 10 $1.46
    • 100 $1.14
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    Avnet Abacus RA73F2A200RBTDF 17 Weeks 1,000
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    Master Electronics RA73F2A200RBTDF
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    2A200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2A200 RPM Micro 2.0A Iout, 200V Vrrm General Purpose Silicon Rectifier Scan PDF
    2A200-6100-8N1S 3M Electronic and Interconnect Solutions Rectangular - Board to Board Connectors - Arrays, Edge Type, Mezzanine, Connectors, Interconnects, CONN SOCKET .8MM 200POS SMD Original PDF

    2A200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5171

    Abstract: 1N5172 mh70 2A200 Solitron 2a200 1N5176
    Text: rectifiers 19 2A SERIES JEDEC REGISTRATION CASE STYLE 1N5170 thru 1N5178 1N4517 G Solitron Part Numbers Jedec Type !. PIV Jedec Type PIV 15 N/A MCV 15 N/A 2A30 30 N/A MC30 30 1N5171 2A50 50 N/A M67 50 1N5172 2A100 100 N/A MH67 50 1N4517 2A200 200 N/A M68


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    1N5170 1N5178 1N4517) 1N5171 1N5172 1N4517 1N5173 1N5174 1N5175 mh70 2A200 Solitron 2a200 1N5176 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N PDF

    Untitled

    Abstract: No abstract text available
    Text: Spade and Ring Series .240 Spade 22-16 AWG U n in s u la te d STYLE AND D IM E N S IO N S IN S U LA T IO N Q U A N T IT Y RECO M M ENDED STOCK PER REEL S T R IP LE N G T H T H IC K N E S S STUD RANGE .075-.125 V00 6000 Vs 2 .075-.125 tS 6000 Va U L / CSA ±


    OCR Scan
    3A1-10-3 3A2-10-3 PDF

    Solitron J775-2

    Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
    Text: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188


    OCR Scan
    10D05 RL151G 1N4934 RL152G 1N4935 RL153G RL154G 1N4936 RL155G Solitron J775-2 BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba PDF

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    S70GL01GN00 2B60000 S29GL512N gl512 2200-0002 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL512P, S29GL256P, S29GL128P S29GL512N datasheet GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL256N S29GL512N PDF

    IN2071

    Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
    Text: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200


    OCR Scan
    tllb040 CER67 CER68 CER69 1N2069 CER70 1N2070 CER500 N2071 CER72 IN2071 1N5171 CER68 3c400 3001C 1N4089 CER67 PDF

    SA418

    Abstract: 346000 S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N SA418 346000 PDF

    2C200

    Abstract: S29GL S29GL128P S29GL512P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-N S29GL-P
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, 2C200 S29GL S29GL128P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-P PDF

    A 27631

    Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0 PDF

    S29GL512N datasheet

    Abstract: Spansion S29GL256N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL512N datasheet Spansion S29GL256N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_ PDF

    JS28F512M29EWL

    Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F512M29EWL JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW PDF

    TS-0888-05

    Abstract: No abstract text available
    Text: 3M Pak 8 Surface Mount Socket 0.8 mm Straight, Board to Board 2A Series S Low-profile interface requires only 5.0 mm space between parallel circuit boards S Bellow style, beryllium-copper BeCu wipers ensure long term reliability S 3 asymmetrical alignment posts correctly


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    TS-0888-05 10rial PDF

    PN3207

    Abstract: PH50S PKT150F PH50S24-24 ph150f PH150S48-24 lambda ph50 temperature lambda ph50s24-5 PH150S110-24 PH100S280-5
    Text: PH Series Higfe power «inverters Wide Range Input Full Function Modules. Lambda’s Full Function High Density Output Adjustment Capability Simple Or Full Function Modules Remote O n/off PH Series modules achieve 5 million hours MTBF, Active single wire current sharing coupled with a


    OCR Scan
    PATP41 PH50S, PH75S PAL03-1 10OmH PH50/75X48-XX PATP62 PH75F, PH100S, PN3207 PH50S PKT150F PH50S24-24 ph150f PH150S48-24 lambda ph50 temperature lambda ph50s24-5 PH150S110-24 PH100S280-5 PDF

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29 PDF

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Text: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


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    512Mb: M29AW 512Mb x8/x16, 100ns 110ns 512-word 128KB/64 09005aef8462ccad/ZIP 09005aef8462cca4 JS28F512M29 M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A PDF