29AUG05 Search Results

Contextual Info: 6 TH S DRAWI NG IS COPYRIGHT 19 UNPUBLISHED. RELEASED BY A MP INCORPORATED. ALL FOR PUBLICATION RIGHTS 3 ,19 LOC DIST REVISIONS ¡P RESERVED. LTR DESCRIPTION RELEASE -1 REV 0520-2045-04 PER THRL -12 DATE DWN APVD 245EP02 T5 JH 29AUG05 T5 JH D D 100+25 [3.94+.98]

Contextual Info: MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA ITO-220AB TO-220AB Major Ratings and Characteristics IF AV 2x5A VRRM 150 V IFSM 160 A VF 0.72 V Tj 175 °C 1 2 3

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR ALL C O P Y R IG H T B Y TYC O E L E C T R O N IC S P U B L IC A T IO N R IG H T S - - RESERVED. C O R P O R A T IO N . D C 1 .65 B 3.1 8 2.79 A SEC TIO N A - A S C A LE 20:1 AMP 1471-9 REV 31MAR2000

Contextual Info: MBR30H150CT, MBRF30H150CT & SB30H150CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA ITO-220AB TO-220AB Major Ratings and Characteristics IF AV 2 x 15 A VRRM 150 V IFSM 160 A VF 0.75 V Tj 175 °C 1

RCA e3

Contextual Info: RCA. e3 Vishay Automotive Grade Lead Pb -Free Thick Film, Rectangular Chip Resistors FEATURES • Metal glaze on high quality ceramic with protective overglaze • Sulfur resistant • Superior resistance against H2S-atmosphere than standard Ag contacts

1K32

Abstract: RCA1210 0000 E3 RCA e3 RCA0402
Contextual Info: RCA. e3 Vishay Automotive Grade Lead Pb -Free Thick Film, Rectangular Chip Resistors FEATURES • Metal glaze on high quality ceramic with protective overglaze • Sulfur resistant • Superior resistance against H2S-atmosphere than standard Ag contacts

modbus RS485 siemens

Abstract: Allen Bradley PLC load cell web Tension control system BLH load cell Force Transducer sensitivity resolution high intensity transducers SCHNEIDER PLC work of transducers Allen Bradley PLC 2
Contextual Info: Model LCt-104 Vishay BLH Multi-Zone Web Tension Transmitter FEATURES • Individually digitized transducer forces for 4 web tension transducers 1, 2, or 4 zone configuration • View left, right, and total; force, tension and angle values • 100% digital calibration - no dead weight loading and no

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD A REV PER ECR-06-011989 18MAY2006 M.L S.Y B REV PER ECR-12-011791 03JUL2012 CZ SZ ADVISED

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred max i I 3 2 s e a l i n g gl and 5 ^ 6 washer and nut PG9 contact no. 2 GND c o n t a c t pr e- mat i ng pi n 41, 5 max i n ii n cable outer diameter from 6,9 mm to 8,6 mm x3 stranded wi res 1,5 mm2 Deloil. 33415

Contextual Info: Alle lechte vorbehalten/ HU rights re strni 1 2 3 4 5 r 6 n Cable 04.9 -8.6mm A = . GND Contact pre-mating pin 59 maxi On request : color coding ring for Pg9 nut TB 09 (5 8(0 001X HD 7 -t i, f 47,1 maxi cable outer diameter from 4,9 mm to 8,6 mm x3 stranded wires 1,5 mm2

Contextual Info: MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA ITO-220AB TO-220AB Major Ratings and Characteristics IF AV 2x5A VRRM 150 V IFSM 160 A VF 0.72 V Tj 175 °C 1 2 3

4446

Abstract: AN609 Si3971DV
Contextual Info: Si3971DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9433

Abstract: AN609 Si4404DY 12283
Contextual Info: Si4404DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si4401BDY 61387
Contextual Info: Si4401BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 1 3 2 | 19,9 max i 25,2 5 k 6 15,7 max i contact n o .2 u i_ n -d- U 1mm flat seal wi thout x2 M2,5 screwing 18 maxi _ a pq pq —n n Panel front cutout 25,2 _ ^ -C 18, A ±0.1 0,3 mN recommended screwing torque

JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA ITO-220AB TO-220AB Major Ratings and Characteristics IF AV 2 x 10 A VRRM 150 V IFSM 200 A VF 0.75 V Tj 175 °C 1

Contextual Info: TCN Vishay Techno Capacitor Networks, Coated SIP FEATURES • NPO or X7R capacitors for line terminator. • Wide operating temperature range. • Epoxy based conformal coating. • Solder coated copper terminals. • Solderability per MIL-STD-202 method 208E.

Contextual Info: CRHV Vishay Techno High Voltage Chip Resistors FEATURES • • • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS VOLTAGE POWER RESISTANCE RATING RATING* RANGE* V (Max.) (MW) (Ohms) CRHV1206 2M - 8G 300 1500 CRHV1210 4M - 10G 450 1750 CRHV2010

AN609

Abstract: Si4406DY
Contextual Info: Si4406DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74086

Abstract: 4435 m 9583 siliconix 4435 AN609 Si4390DY 49368
Contextual Info: Si4390DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

urv4

Contextual Info: ECV Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors Pb-free Available • SMD Style RoHS* • Miniature dimension COMPLIANT • Extended temperature range: 105 °C • Reflow soldering QUICK REFERENCE DATA DESCRIPTION

Roederstein ELECTROLYTIC CAPACITOR

Contextual Info: ECB Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors • SMD Style Pb-free Available • Miniature dimension RoHS* COMPLIANT • Extended temperature range: 105 °C • Reflow soldering Component Outline. • Packaging: blistertape on reel

Contextual Info: ECA Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors • SMD Style Pb-free Available • High CU-product RoHS* COMPLIANT • Miniature dimension • Reflow soldering • Packaging: blistertape on reel QUICK REFERENCE DATA