2sk2564
Abstract: F8F60VX2 29mJ
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2564
F8F60VX2)
FTO-220
00-200V
290mJ
2sk2564
F8F60VX2
29mJ
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NTE67
Abstract: No abstract text available
Text: NTE67 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
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NTE67
NTE67
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F8F60VX2
Abstract: 2sk2564
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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Original
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2SK2564
F8F60VX2)
FTO-220
00-200V
290mJ
F8F60VX2
2sk2564
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PDF
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2SK2564
Abstract: F8F60VX2 N channel 600v 8a mosfet 60
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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Original
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2SK2564
F8F60VX2)
FTO-220
00-200V
290mJ
2SK2564
F8F60VX2
N channel 600v 8a
mosfet 60
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PDF
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3N0404
Abstract: infineon smd package
Text: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1
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IPB80N04S3-04
IPI80N04S3-04,
IPP80N04S3-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPB80N04S3-04
IPI80N04S3-04
3N0404
infineon smd package
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