Untitled
Abstract: No abstract text available
Text: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
M58LT128KST
M58LT128KSB
|
PDF
|
M58LT256KST
Abstract: M58LT256KSB
Text: M58LT256KST M58LT256KSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
M58LT256KST
M58LT256KSB
M58LT256KSB
|
PDF
|