28JAN03 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G 61- 0 0 1 6 - 0 3 DWN 28JAN03 APVD JR MS D D +.005 .2 7 5 - H D IA . *+.015

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. _ i_ ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS LTR B DESCRIPTION REVISED PER OG6 3 - 0 0 0 5 - 0 3 DATE OWN APVD 28JAN03 JR GJ 1. SPECIFICATIO NS MAGNET WIRE #18 - #34 AWG,

Contextual Info: T H 1S D R A W 1NG T 1S C O R Y R 1G HT U N P U B L 1S H E D . RELEASED 19 BY AMP INCORPORATED. FOR ALL ,19 P U B L 1C A T ION RIGHTS LOC RESERVED. DY Dl ST REV I S IONS LTR DE SC R I P T I O N REVISED -DATE DATE 28JAN03 F P 0 0 -00I 1-03 CODE I . 6 0 ±0 . 08

DO-204AP

Contextual Info: CG2/DG2 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

Contextual Info: CG1 / DG1 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

IP20

Abstract: IP67 Y-CONRJ45
Contextual Info: Y-ConRJ45 Crimping Instruction – IP67 Seite 1 2 3 4 5 6 IP67 7 8 9 Y-ConTool-30 10 11 Step 1 Step 2 13 Step 4 Yamaichi Electronics Deutschland GmbH 14 12 Step 3 15 28-Jan-03 Y-ConRJ45 Crimping instructions – IP20 Seite 1 2 3 4 5 6 IP20 8 7 9 Y-ConTool-30

DO-204AP

Abstract: G2G G1 diode gg2a
Contextual Info: G2A to G2M VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 2.0 ampere operation at Tamb=75 °C with no thermal runaway

fe6d

Abstract: FE6D G-4
Contextual Info: FE6A to FE6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

DIODE RG4A

Abstract: rg4a diode
Contextual Info: RG4A to RG4J VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway

Contextual Info: RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT 53.34±0.13 [2.100±.005] 26.16 [1.030] 0.38±0.10 [.015±.004] 60.19±0.20 [2.370±.012] TOP OF PCB LP 59.17 [2.330] 3 x 13.97 [.550] = 41.91 [1.650] 1 8 1 8 1 8 1 1 8 1 8 1 8 1 8 3.50±0.30 [.138±.012]

DO-204AP

Abstract: fe2c
Contextual Info: FE2A to FE2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

rg1g diode

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

FE3A

Abstract: fe3d
Contextual Info: FE3A to FE3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT 81.28±0.13 [3.200±.005] 26.16 [1.030] 0.38±0.10 [.015±.004] 88.01±0.20 [3.465±.008] TOP OF PCB LP 87.13 [3.430] 3 x 13.97 [.550] = 69.85 [2.750] 1 8 1 8 1 8 1 8 1 8 1 1 8 1 8 1 8 1 8 1 8

DO-204AP

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

MLP33-5

Contextual Info: Package Information Vishay Siliconix MLP33−5 PowerPAKr D2 L Q H 8 1 Z e 1 E2 3 4 Q 5 b 4 E1 E 2 2 L1 Q A Q A1 c DETAIL Z 2 D1 D NOTES: 1. Inch will govern 2. Dimensions D1 and E1 do not include mold gate burrs. MILLIMETERS Dim A A1 b c D D1 D2 E E1 E2 e

1N5550

Abstract: 1N5551 1N5552
Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency

SIL6020

Abstract: transformer step down 230 V 50 Hz 9 V HICAL sil6020 step down transformer 230 v to 12 v topswitch-gx EP-34 "general semiconductor diode" vogt 408 15 EPR-34 of transformer step down 230 V 50 Hz 9 V
Contextual Info: Engineering Prototype Report for EP-34 – Single Output 30 W AC-DC Power Supply Using TOP245Y TOPSwitch-GX Title Specification Universal Input, 12 V at 30 W Output Application Generic Author Power Integrations Applications Department Document Number

GI1004

Abstract: DO-204AP GI1001 GI1002 GI1003
Contextual Info: GI1001 to GI1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

DO-204AP

Abstract: rg1g diode RG1A RG1G
Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

Sinterglass

Abstract: DO-204AP DO204AP Package g1g diode DO204AP
Contextual Info: G1A to G1M VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction in DO204AP package • Hermetically sealed package • 1.0 ampere operation at Tamb = 100 °C with no

DIODE RG3j

Abstract: RG3D RG3M DIODE RG3D
Contextual Info: RG3A to RG3M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway

Contextual Info: FE5A to FE5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

SB5H100

Abstract: SB5H90
Contextual Info: SB5H90 and SB5H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifier Reverse Voltage 90 to 100V Forward Current 5.0A DO-201AD Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0