28F256
Abstract: UT28F256
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to
|
Original
|
UT28F256
0E-11
28-lead
50-mil
100-mile
28F256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to
|
Original
|
UT28F256
125mA
25MHz
MIL-STD-883,
0E-11
28F256)
32Kx8
|
PDF
|
ut28F256
Abstract: 28F256 UT28F256QLE UT28F256QL
Text: NOTE: This product has been replaced with UT28F256QLE or SMD 5962-96891 device types 09 and 10. 1 Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory
|
Original
|
UT28F256QLE
UT28F256
0E-11
28F256
UT28F256QL
|
PDF
|
28F256
Abstract: UT28F256
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet May 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to
|
Original
|
UT28F256
0E-11
28-pin
100-mil
28-lead
50-mil
flat56)
32Kx8
28F256
|
PDF
|
UT28F256
Abstract: No abstract text available
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet November 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to
|
Original
|
UT28F256
125mA
25MHz
MIL-STD-883,
0E-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability
|
Original
|
UT28F256
125mA
25MHz
MIL-STD-883,
0E-11
28F256)
32Kx8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet October 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to
|
Original
|
UT28F256
125mA
25MHz
MIL-STD-883,
0E-11
28F256)
32Kx8
|
PDF
|
28F256
Abstract: UT28F256
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet March 2000 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability
|
Original
|
UT28F256
28-pin
100-mil
28-lead
50-mil
125mA
25MHz
28F256)
32Kx8
28F256
|
PDF
|
28F256
Abstract: No abstract text available
Text: a F IN A L Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance - ■ Low power consumption - I 30 mA maximum active current 100 \>A maximum standby current No data retention power Compatible with JEDEC-standard byte-wide
|
OCR Scan
|
Am28F256
32-pin
28F256
28F256
|
PDF
|
intel 28F256
Abstract: 28F256 CMOS FLASH 28F256 intel 28F256 plcc 1H90 N28F256-170P1C2 capacitor ja8 intel power supply 450 watt circuit diagram 27F256 D28F256
Text: INTEL CORP MEMORY/LOGIC 5QE D • 4flShl7b GQh72fciO t. ■ lÄ iL ß G ü f lO IiM V T -U -1 3 -2 1 28F256 256K (32K x 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 100 ¿is Typical Byte-Program
|
OCR Scan
|
G0h72b0
28F256
GGb72Ã
28F256
T-46-13-27
32-PIN
32-LEAD
D28F256-170P1G2
D28F256-200P1G2
D28F256-250P1C2
intel 28F256
28F256 CMOS FLASH
intel 28F256 plcc
1H90
N28F256-170P1C2
capacitor ja8
intel power supply 450 watt circuit diagram
27F256
D28F256
|
PDF
|
28F256 CMOS FLASH
Abstract: No abstract text available
Text: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.
|
OCR Scan
|
M28F256
SPEED/10
28F256 CMOS FLASH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase
|
OCR Scan
|
Am28F256
32-Pin
0257S2Ã
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase
|
OCR Scan
|
Am28F256
32-Pin
AM28F256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC
|
OCR Scan
|
Am28F256
32-Pin
28F256
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time
|
OCR Scan
|
Am28F256
32-Pin
TS032--32-Pin
16-038-TSOP-2
TSR032--32-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time
|
OCR Scan
|
Am28F256
32-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time
|
OCR Scan
|
Am28F256
32-Pin
16-038-S
PL032â
TS032â
16-038-TSOP-2
|
PDF
|
M28F256A
Abstract: M28F256 PDIP32 PLCC32
Text: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)
|
OCR Scan
|
M28F256
100ns
M28F256
100ns
PDIP32
PLCC32
M28F256A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 55E D Æ 7 • TRSIEB? Q03773D 7Qt. ■ SGTH T-HC-I3-ZÇ, S G S -IH O M S O N S G S- THOMSON * 7 # . M 2 8 F 2 5 6 CMOS 256K 32K x 8 FLASH MEMORY ■ ■ ■ ■ FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns
|
OCR Scan
|
Q03773D
100ns
M28F256
0D377M4
M28F256
28F256
PDIP32
PLCC32
|
PDF
|
28f256
Abstract: No abstract text available
Text: /= 7 S G S -TH O M S O N M28F256 dD g^ [iLi(gir (Q iD(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 120ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 100|is (PRESTO F PROGRAMMING) ■ ELECTRICAL CHIP ERASE IN 1s RANGE
|
OCR Scan
|
M28F256
120ns
M28F256
PLCC32
28f256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Prelim inary CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Tim er for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tan d b y: 1 mA max (TTL levels)
|
OCR Scan
|
CAT28F256
256K-Bit
-32-p
28F256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Preliminary Data Sheet i t i s #f i l i f i i < l i f i 8f t f l i i l October 1998 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory Supported by industry standard programmer
|
OCR Scan
|
UT28F256
125mA
25MHz
MIL-STD-883,
256KPROM-2-10-98
|
PDF
|
intel 28F256
Abstract: CAT28F256 intel 28F256 flash 28F256 intel 28F256 dip 28F256 CMOS FLASH
Text: LV S T P re lim in a ry CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)
|
OCR Scan
|
CAT28F256
256K-Bit
-32-pin
CAT28F256
28F256
CAT28F256NI-90TE7
intel 28F256
intel 28F256 flash
intel 28F256 dip
28F256 CMOS FLASH
|
PDF
|
231369
Abstract: 27F256
Text: in te T P fô S O B M M V 27F256 256K 32K x 8 CMOS FLASH MEMORY Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 jas Typical Byte-Program
|
OCR Scan
|
27F256
28-Pin
27F256
256-170P2CZ
D27F256-200P2C2
D27F256-250P2C2
231369
|
PDF
|
