28F256 CMOS FLASH Search Results

intel 28F256

Abstract: 28F256 CMOS FLASH 28F256 intel 28F256 plcc 1H90 N28F256-170P1C2 capacitor ja8 intel power supply 450 watt circuit diagram 27F256 D28F256
Contextual Info: INTEL CORP MEMORY/LOGIC 5QE D • 4flShl7b GQh72fciO t. ■ lÄ iL ß G ü f lO IiM V T -U -1 3 -2 1 28F256 256K (32K x 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 100 ¿is Typical Byte-Program

28F256

Contextual Info: a F IN A L Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance - ■ Low power consumption - I 30 mA maximum active current 100 \>A maximum standby current No data retention power Compatible with JEDEC-standard byte-wide

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

Contextual Info: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC

28F256 CMOS FLASH

Contextual Info: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

Contextual Info: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE

plcc-32 vcc

Contextual Info: n A d van ced M icro D evices A m 2 8 F 2 5 6 3 2 ,7 6 8 x 8 -B it F la s h E 2 PR O M DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chlp-Eraso — One Second Typical Chip-Erase ■ Compatible with JEDEC Standard Byte Wide 32-pln EEPROM Pinouts

Contextual Info: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

28F256

Abstract: TMS29F258-170 TMS29F258-25 TMS29F258-250 TMS29F258-30 TMS29F258-300
Contextual Info: - I 142 8 F 2 5 6 X A • ■ /+ y ímííü63ü0 m % tt £ cc m TAAC max ns) TCAC max (ns) TOH max (ns) TOE ■ax (ns) TOD oiax (ns) VDD (V) n a M I DD/STANt'BY (mii) V IL nax (V) V IH lin (V) iti -h /m e * Ci max (pF) V O L /1 VOL (V/ii A) æ VO H /1 VOH

M28F256A

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: 55E D Æ 7 • TRSIEB? Q03773D 7Qt. ■ SGTH T-HC-I3-ZÇ, S G S -IH O M S O N S G S- THOMSON * 7 # . M 2 8 F 2 5 6 CMOS 256K 32K x 8 FLASH MEMORY ■ ■ ■ ■ FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns

28f256

Contextual Info: /= 7 S G S -TH O M S O N M28F256 dD g^ [iLi(gir (Q iD(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 120ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 100|is (PRESTO F PROGRAMMING) ■ ELECTRICAL CHIP ERASE IN 1s RANGE

intel 28F256

Abstract: CAT28F256 intel 28F256 flash 28F256 intel 28F256 dip 28F256 CMOS FLASH
Contextual Info: LV S T P re lim in a ry CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

allmax

Abstract: circuitos integrados memoria ram 6116 MC68HC705 manual circuitos integrados megamax-4g ee tools megamax-4g memorias ram RomMax puerto paralelo
Contextual Info: HERRAMIENTAS DE DESARROLLO COP8 El set de herramientas de desarrollo COP8 de National Semiconductor le permite soportar sus diseños a través de un amplia gama de productos de software y hardware. Usando estas herramientas, su aplicación puede ser diseñada, implementada compilada y ensamblada usando

231369

Abstract: 27F256
Contextual Info: in te T P fô S O B M M V 27F256 256K 32K x 8 CMOS FLASH MEMORY Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 jas Typical Byte-Program

27F256

Abstract: W 27f256 290158 170P2
Contextual Info: PKEyßälO RlM IY in te i 27F256 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 us Typical Byte-Program — 4 Second Chlp-Program EPROM-Compatible 12.75V Vpp Supply 100 Erase/Program Cycles Minimum

AS263

Abstract: 271066 l213d
Contextual Info: INTEL CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ ¡ n y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

TB13A

Abstract: intel 28F256 27F256 27108 80C186 A12E AP-316 M28F256
Contextual Info: I NT E L ¡ n CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

27F256

Abstract: 80C186 programming 27F64 27C256 80C186 MCS-51 intel 28F256 290153 290157 mya 111
Contextual Info: in te T P fô S O B M M V 27F256 256K 32K x 8 CMOS FLASH MEMORY Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 jas Typical Byte-Program

1156-0E

Abstract: AM28F256-90
Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 p.A maximum standby current

Intel AP-401

Abstract: AP-316 29204* intel lm2391
Contextual Info: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE