28DBC Search Results

D1028UK

Abstract: siemens plc 300w rf amplifier uhf EXE18 Storm Products T21N coaxial plc cable EXE18 19/30 S1TW coaxial cable "storm products"
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

J315

Abstract: J425 MS1578 J1225
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1578 RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION Features • • • • • • • • • GOLD METALLIZATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED

atc100a

Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
Contextual Info: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in

qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
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E4440A

Abstract: high power amplifier pallet 6674A E4418B IFR3414 WCDMA
Contextual Info: GaN-SiC Pallet Amplifier RTP09425-10 Product Features Application • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 25W typical PAVG

Contextual Info: TetraFET D1028UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

HFA3101

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Contextual Info: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

8593E

Abstract: AN0001 AN1892 RF2422
Contextual Info: AN0001 15 AN0001 Optimization of Quadrature Modulator Performance Optimization of Quadrature Modulator Performance Introduction Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,

064R

Abstract: D1027UK coaxial storm products
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

k 3918 TRANSISTOR

Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
Contextual Info: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver

Contextual Info: Preliminary Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Harris HFA3101 5 GHz Gilbert cell array

Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

25T26G40

Contextual Info: a#Résumai nm niFien 160 School House Road, Souderton. PA 18964-9990 USA TEL 215-723-8181 • FAX 215-723-5688 MODEL 25T26G40 25 WATTS CW 26.5 - 40 GHz The Model 25T26G40 is a self contained, forced air cooled, broadband traveling wave tube TW T microwave am plifier designed for applications where wide instantaneous bandwidth, high gain and

Decoupling capacitor philips

Abstract: 4066 spice model BFG480W 4405 smd ATC100A BFG80W PMBT3904 BFG-80 bfg8
Contextual Info: Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications

TIM1213-30L

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 12.7GHz to 13.2GHz „ LOW INTERMODULATION DISTORTION

Contextual Info: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a

Contextual Info: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system

Contextual Info: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

POWER 28V 3A 60W

Abstract: SL-6020 SL-60201 SL-60202 J351
Contextual Info: Advance Data Sheet Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

433MHZ amplifier 1w

Abstract: rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA RF transistors with s-parameters
Contextual Info: 19-1185; Rev 3; 9/08 KIT ATION EVALU LE B A IL A AV 3.6V, 1W RF Power Transistors for 900MHz Applications The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion

8593E

Abstract: amplitude modulator gilbert cell AN0001 SMT03 AN1892 8904A quadrature modulator
Contextual Info: AN0001  AN0001 Optimization of Quadrature Modulator Performance
        
  Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,

D1028UK

Abstract: siemens 230 90 064R 300w rf amplifier uhf
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K