28D6 Search Results

Contextual Info: PA32Q1498-28D6-21 Data Sheet 32 pin QFP socket/28 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter allows programming of 32 pin QFP devices in their 28 pin DIP footprint. The adapter is made up of 3 sub-assemblies. They assemble via

MIL-STD-1835

Abstract: 44 Lead Ceramic Leadless Chip Carrier MO-52
Contextual Info: Packages Packaging Information 28D6, 28 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package Cerdip Dimensions in Inches and (Millimeters) 32D6,32 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) Dimensions in Inches and (Millimeters)

FL65

Abstract: 318N MIL-STD-1835 Mq05 VN 990
Contextual Info: Packages Packaging Information 28D6,28 Lead, 0.600” Wide, Non-Windowed, Ceramic Dual Inline Package Cerdip Dimensions in Inches and (Millimeters) 32D6,32 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) Dimensions in Inches and (Millimeters)

Contextual Info: PA32Q1498-28D6-20 Data Sheet 32 pin QFP socket/28 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter allows programming of 32 pin QFP devices in their 28 pin DIP footprint. The adapter is made up of 3 sub-assemblies. They assemble via

AT28C256

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum

Contextual Info: AT29LV256 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 fxA CMOS Standby Current Fast Read Access Time - 200 ns

Contextual Info: J UN I 0 190 Features • • • • • • • • • Fast Read A cce ss Tim e - 20 ns L o w Pow er 140 m A M axim um A ctive 5 m A M axim um (Standby) F ully S tatic: No C lock R equired Two C o n tro l In p uts (CE and OE) TTL C o m patible In p u ts and O u tp uts

at29c256-15pc

Contextual Info: AT29C256 Features • • • Fast Read Access Tim e - 90 ns Five-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches lo r 64 Bytes • Fast Program Cycle Times Page (64 Byte) Program Tim e - 1 0 ms

Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte W rite Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

Contextual Info: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output

Contextual Info: AT28HC256/L Features • • • • • • • • • • • Fast Read Access Time - 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms or 3 ms maximum

5962-88525 15 ZX

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC AT28C256 CERAMIC LEADLESS CHIP CARRIER AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35 AT28C256F
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum

at28pc64

Abstract: AT-28PC64
Contextual Info: AT28PC64 Features • • • • • • • • • • Fast Read Access Tim e-1 SOns Automatic Page Write Operation Internal Address and Data Latches for 32 Bytes Internal Control Timer Fast Write Cycle Times Maximum Page Write Cycle Time: 2ms 1 to 32 Byte Page Write Operation

29C256

Contextual Info: AT29C256 Features • • • • • • • • • • • • Fast Read Access Tim e - 90 ns Five-Volt-Only Reprogram ming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches tor 64 Bytes Internal Program Control and Timer

Contextual Info: AT28C17 Features • Fast Read Access Time - 150ns • Fast Byte Write - 200ns or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output

Contextual Info: AT28HC64/L Features • • • • • » • • • • Fast Read Access Time - 55 ns Automatic Page Write Operation Internal Address and Data Latches for 32 Bytes Internal Control Timer Fast Write Cycle Times Maximum Page Write Cycle Time: 2 ms 1 to 32 Byte Page Write Operation

Carrier 28U

Contextual Info: AT28HC256/L Features • • • • • • • • • • • Fast Read Access Time •70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms or 3 ms maximum

Virtex-5 LX50T

Abstract: SVF pcf VIRTEX-5 FX70T VIRTEX-5 LX110 FPGA Virtex 6 pin configuration Virtex 5 CF Virtex-5 LX50 DSP48E UG191 XC5VLX220
Contextual Info: Virtex-5 FPGA Configuration User Guide User Guide [optional] UG191 v3.7 June 24, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

AT3864L-15DMB

Abstract: AT3864L-15DM power-40mA
Contextual Info: AT3864L-15DMB Features • • • • • • • • • • Fast Read Access Time -15 0 ns Low Power 40 mA Maximum Active 1 mA Maximum (Standby) 2-V Data Retention Fully Static: No Clock Required _ Three Control Inputs (CEi, CE2 , and OE) TTL Compatible Inputs and Outputs