28C010 Search Results

Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram

F3208

Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 A7 Address Buffer and Latch A16 Memory Data Latch FEATURES:

Contextual Info: X Preliminary Information 1 Megabit Module XM 28C010 H S T 128K x 8 Bit 5 Volt, Byte Alterable E2PROM T Y P IC A L F E A T U R E S • High Density 1 Megabit 128K x 8 E2PROM Module • Access Tim e of 120 ns at -5 5 °C to +125°C • SIMPLE Byte and Page Write

28C010-120

Abstract: 28C0102 28C010 400103 28C010-200
Contextual Info: 28C010 1024K High Speed EEPROM EEPROMS Technology, Incorporated July 1992 Features • Military, Extended and Commercial Temperature Rangea • S 5 °C to +125°C Operation Military . -40°C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)

Contextual Info: 1MegabitEEPROM- Radiation Ha r d e n e d O f t P H 1 ft P P P Z O w v I v b For Space Applications l x l 1 2 8 k X M o r y e m 8 E E P R O M M i c r o c i r c u i t DATA INPUTS/OUTPUTS 1/00 - 1/07 Vcc GND ÖE SEI's 28C010ERP RP for RAD-PAK high density 1

28c010T

Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM FEATURES: DESCRIPTION: • 128k x 8-bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C

28C010T - 12

Abstract: 28c010T
Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram

tsop 338

Abstract: 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 MIL-M-38535 2D93 6F9630
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* - 150°C DYNAMIC OPERATING LIFE TEST - CYCLE TEST - 200°C RETENTION BAKE - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT

Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram

28C010T

Abstract: 32-PIN D32-02
Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram

28C010-200

Abstract: 28C010-150 28C010-120 28c010 28C010-250 M28C010
Contextual Info: 28C010 Technology, Incorporated 1024K High Speed EEPROM July 1992 Features Data Protection • Hardware: Power Up/Down Protection Circuitry • JEDEC-Approved Software Write Protection Military, Extended and Commercial Temperature Ranges • S S CC to *12S°C Operation Military

28C010

Abstract: 28C010TRP-120 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN D32-02
Contextual Info: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28C010TRP VCC 1 RDY/BUSY 32 A15 A14 RES A12 WE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28C010TRP A2 High Voltage Generator VSS A16 A4 A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3 RDY/Busy I/O Buffer and

d32-02

Abstract: 28C010T 32-PIN
Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 Memory A16 Data Latch FEATURES:

28C010TRP-120

Abstract: 28C010TRP-150 28C010TRP-175 28C010TRP-200 32-PIN 28c010T
Contextual Info: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28C010TRP VCC 1 RDY/BUSY 32 A15 A14 RES A12 WE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28C010TRP A2 High Voltage Generator VSS A16 A4 A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3 RDY/Busy I/O Buffer and

Maxwell

Abstract: 28C010T 32-PIN 28C010
Contextual Info: 28C010T 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram

AT28C010

Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum

28C010

Abstract: 28c010-15 1N914 CAT28C010
Contextual Info: Advanced Information 28C010 128K x 8 1024K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120 ns ■ Single 5V ■ Automatic Page Write Operation: ± 10% Supply –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: ■ End of Write Detection:

28C010

Abstract: AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 15DM883 lm883
Contextual Info: 28C010 Mil Features • • • • • • • • • • Fast Read Access Time - 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation

atmel 811

Abstract: AT28C010 Mil
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation

Contextual Info: MODULES Q/28C010 Timer E2 1024K Electrically Erasable PROM O ctober 1989 Description Features • CM O S Technology ■ M ilitary Tem perature Range ■ L o w P ow er O peration • 70 m A A ctive Current • 2 m A S tandby Current ■ On-Chip Timer • A utom atic E rase B efore Write

ne 5555 timer

Contextual Info: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)

Contextual Info: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module 28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C

Contextual Info: MODULES 28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's 28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The 28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010