28APR05 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 00 LTR H DESCRIPTION EG 0G 3C 0209 DATE 05 DWN 28APR05 APVD BSV JLG .000 D THE NOTED DIMENSION APPLIES AT THE

UMCC - AT

Abstract: MMCX umcc cable pc a plc
Contextual Info: 2 THIS DRAWING IS U N PUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION LOC A LL RIGHTS RESERVED. HT D IST R E V IS IO N S 00 DESCRIPTION HXF DF 28APR05 NOTES 1. HIRO SE C O M PATIBLE E LEC TRIC AL TESTING FOR: C O N TIN UITY AND SHO RTS. H I- P O T AT 1 5 0

Contextual Info: 2 THIS DRAWING IS UNPU BLISH ED . RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATIO N LOC A LL RIGHTS RE5ERVED. HT DIST R E V IS IO N S 00 D ESCRIPTION 28APR05 HXF DF NOTES 1. HIR OSE C OM PATIB LE ELEC TRIC AL TESTING FOR: CONTINUITY AND SHORTS. H I- P O T AT ' 5 0

Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

diode 1N 4002

Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Contextual Info: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

S12XS

Abstract: MC9S12XS256RMV1 S12XS256 Freescale HCS12X PFlash generator cr 665 bosch 128K8 9S12XS256 bosch can 2.0A RB1M transistor a614 PIN CONFIGURATION
Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.13 08/2012 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

BOSCH 0 261 210 691

Abstract: XGate
Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.10 05/2010 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

Contextual Info: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

GI824

Contextual Info: GI820 thru GI828 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 800 V IFSM 300 A trr 200 ns VF 1.05 V IR 10 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • • •

Contextual Info: SRP300A thru SRP300K Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 150 A trr 100 ns, 150 ns, 200 ns IR 10 µA VF 1.3 V Tj max. 125 °C DO-201AD Features • • • • • Glass passivated chip junction

BY254P

Contextual Info: BY251P thru BY255P Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 150 A IR 5.0 µA VF 1.1 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current, IR less than 0.1 µA

Contextual Info: P600A thru P600M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features • • • • Low forward voltage drop

Contextual Info: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Small feedback capacitance Low noise figure e3 Low cross modulation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 18991

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS D IS T FT LTR DESCRIPTION DATE DWN APVD GS B REVISED PER 0G 3B - 023 0- 0 5 4 /2 7 /0 5 SS B1 REVISED PER E C 0 - 0 9 - 0 2 1 826

Contextual Info: XOSM-55 Vishay Dale J - Lead Plastic Clock Oscillators FEATURES • J-Lead plastic surface mount • SG-615 compatible • Wide frequency range • Low cost • Tri-state enable/disable The XOSM-55 series oscillator is a J-Lead plastic tri-state enable/disable controled

BFR181TF

Contextual Info: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

manual bosch al 1450 dv

Abstract: MC9S12XEP100RMV1 9s12xeq384 144 QFP transistor k 2761 bosch al 60 dv 1419 bosch AL 1411 DV BOSCH 7.4.9 Variable resistor 10K ohm 103 9s12xet256 S12XFTM256K2V1
Contextual Info: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.13 11/2007 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most current. A printed copy may be an earlier revision. To verify you have the latest information available, refer

Contextual Info: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at

Contextual Info: BFR182TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: GI850 thru GI858 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 800 V IFSM 100 A trr 200 ns IR 10 µA VF 1.25 V Tj max. 150 °C DO-201AD Features • • • • Fast switching for high efficiency

IN 5402 rectifier

Contextual Info: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current

Contextual Info: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

M100M

Abstract: M100A M100B M100D M100G M100J M100K
Contextual Info: M100A thru M100M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 µA VF 1.0 V, 1.1 V Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

MARKING SMD npn TRANSISTOR 690

Abstract: smd transistor E3 BFQ6 transistor smd .PB v1
Contextual Info: BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous