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    275PF Search Results

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    275PF Price and Stock

    Japan Aviation Electronics Industry Limited D02-75PF-N-F0

    CONN D-SUB HD HOUSING PLUG 75POS
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    DigiKey D02-75PF-N-F0 Bulk
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    JRH Electronics 806-039-ZR22E27-5PF

    Circular connector
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    DigiKey 806-039-ZR22E27-5PF 1
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    JRH Electronics 806-039-MT22E27-5PF

    Circular connector
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    DigiKey 806-039-MT22E27-5PF 1
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    JRH Electronics 806-039-ME22E27-5PF

    Circular connector
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    DigiKey 806-039-ME22E27-5PF 1
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    JRH Electronics 806-039-Z122E27-5PF

    Circular connector
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    DigiKey 806-039-Z122E27-5PF 1
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    275PF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT1624

    Abstract: LT1628 lt1775 lt1625 1N914 LT1506 LT1959 LT1959C LT1959CR LT1959I
    Text: LT1959 4.5A, 500kHz Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1959 is a 500kHz monolithic buck mode switching regulator functionally identical to the LT1506 but optimized for lower output voltage applications. It will operate down


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    PDF LT1959 500kHz LT1506 LT1506. LT1625 LT1628 LTC1735 LT1775 LT1624 LT1628 lt1775 lt1625 1N914 LT1959 LT1959C LT1959CR LT1959I

    OC24

    Abstract: OC48 ONET2591TA ONET2591TAY
    Text: ONET2591TA www.ti.com SLLS669 – SEPTEMBER 2005 2.5-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 1.8-GHz Bandwidth 2.6-kΩ Differential Transimpedance Automatic Gain Control AGC 6.6-pA/√Hz Typical Input Referred Noise


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    PDF ONET2591TA SLLS669 125-Gbps 0625-Gbps ONET2591TA OC24 OC48 ONET2591TAY

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT  Features • • • • • • • 16 Amp Guard ring for transient protection Low power loss high efficiency


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    PDF MBR16100CT -50oC 150oC

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT  Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection


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    PDF MBR16100CT O-220AB MBR16100CT

    Untitled

    Abstract: No abstract text available
    Text: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise


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    PDF ONET4291TA SLLS670 25-Gbps 25-Gbps, 125-Gbps, 0625-Gbps

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR15100CT  Features • • • • 15 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection


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    PDF MBR15100CT O-220AB MBR15100CT

    marking MCC

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT  Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection


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    PDF MBR16100CT O-220AB MBR16100CT marking MCC

    lt1028

    Abstract: LT317A
    Text: LT1028/LT1128 Ultralow Noise Precision High Speed Op Amps FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1028 gain of –1 stable /LT1128(gain of +1 stable) achieve a new standard of excellence in noise performance with 0.85nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This


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    PDF LT1028/LT1128 /LT1128 85nV/â 75MHz LT1028, 20MHz LT1128) LT1028/ LT1128 LT1028 lt1028 LT317A

    Untitled

    Abstract: No abstract text available
    Text: Ultrafast Recovery Modules HU100, 101 & 102 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J H F C E A L Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L B K Dim. Inches 1.52 .725 .605 1.182 .745 .152 .525 .156 .495 .120


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    PDF HU100, HU10005* HU10010* HU10015* HU10020* HU10120* HU10130* HU10140* HU10150* 600ubsidiaries,

    Untitled

    Abstract: No abstract text available
    Text: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise


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    PDF ONET4291TA SLLS670 25-Gbps 25-Gbps, 125-Gbps, 0625-Gbps ONET4291TA

    Untitled

    Abstract: No abstract text available
    Text: ONET4291T SLLSE82 – APRIL 2011 www.ti.com 4.25-Gbps Transimpedance Amplifier With AGC and RSSI Check for Samples: ONET4291T FEATURES APPLICATIONS • • • • • • • • 1 • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC


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    PDF ONET4291T SLLSE82 25-Gbps 25-Gbps, 125-Gbps, 0625-Gbps ONET4291T

    CAP 103pF

    Abstract: 1r5pf
    Text: KOA SPEER ELECTRONICS, INC. TN-196 R9 AHA 10/22/04 Ceramic Chip Capacitors Type NPO, X5R, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices.


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    PDF TN-196 CAP 103pF 1r5pf

    5-65pF

    Abstract: No abstract text available
    Text: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)


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    PDF 222PF 272PF 332PF 392PF 472PF 562PF 682PF 822PF 103PF 123PF 5-65pF

    TCC 47uF 20 6.3V

    Abstract: No abstract text available
    Text: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)


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    PDF 222PF 272PF 332PF 392PF 472PF 562PF 682PF 822PF 103PF 123PF TCC 47uF 20 6.3V

    1r5pf

    Abstract: 1R5P 8R2PF 223PF z5u .05 332pF 5r6pf capacitor 100pF 0805 datasheet 122PF 100PF
    Text: TN-196 R1 Ceramic Chip Capacitors Type NPO, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices. 2. Type Designation The type designation shall be the following form:


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    PDF TN-196 30ppm/ 1r5pf 1R5P 8R2PF 223PF z5u .05 332pF 5r6pf capacitor 100pF 0805 datasheet 122PF 100PF

    CS5012A

    Abstract: CS5014 CS5016
    Text: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of


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    PDF CS5016 CS5014 CS5012A 12-Bit, CS5012A/14/16 16-bit CS5012A/14) CS5016) CS5012A

    CS5012-BD24

    Abstract: KL14 diode CS5012A CS5014 CS5016
    Text: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of


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    PDF CS5016 CS5014 CS5012A 12-Bit, CS5012A/14/16 16-bit CS5012A/14) CS5016) CS5012-BD24 KL14 diode CS5012A

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


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    PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv

    Untitled

    Abstract: No abstract text available
    Text: I Radial Ceramic Capacitors ^ RADIAL CERAMIC CAPACITORS ivO A Le SPEER ELECTRONICS, IN C . Conformally coated radial MLC's. NPO, X7R, Y5U temperature coefficients available. Epoxy construction. Wide range of voltage offerings. RATINGS Dielectric Capacitance


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    PDF 470pF 000pF

    chebyshev 3dB

    Abstract: table for bessel and chebyshev response 200UA 40KHZ voltage controlled filter
    Text: S5E D • ^7^0457 Q000314 3 ■ ON CHIP SYSTEMS CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Awe. Los Gatos» CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description The CEM 3387 is a general purpose audio signal processor intended


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    PDF b7104S7 Q000314 chebyshev 3dB table for bessel and chebyshev response 200UA 40KHZ voltage controlled filter

    UFT20015

    Abstract: UFT20140 UFT20005 UFT20010 UFT20020 UFT20120 UFT20130 UFT20150 UFT20260 UFT20270
    Text: IJltrafast Recover y Modules r200, 201 ¥ Baseplate A=Common Anode V Ut T t i- h 1 I- r ^ . r ^ i i 1 c tH -1 1 i 11 -IAIE Baseplate Common Cathode °N | W ° Baseplate D=Doubler & 2 0 2 Dim . Inches Min. M illim e te rs Max. A -3.630 B 0.700 0.800 c —


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    PDF UFT20005* UFT20010* UFT20015* UFT20020* UFT20015 UFT20140 UFT20005 UFT20010 UFT20020 UFT20120 UFT20130 UFT20150 UFT20260 UFT20270

    UFT20120

    Abstract: UFT200 UFT20005 UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20260 UFT20270
    Text: Ultrafast Recovery Modules UFT2QQ, 201 & 202 Dim. Inches ¥ Min. Baseplate A=Common Anode V Baseplate Common Cathode u t“ 1 1 1 — / T \ 1 / É i V r 1 °-N - 1 c i TT E I + H > Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800


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    PDF UFT200, UFT20005* UFT20010* UFT20015* FT20020 UFT20120* UFT20120 UFT200 UFT20005 UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20260 UFT20270

    CEM3387

    Abstract: 1569pF audio filter vcf
    Text: aimr-wir CURTIS ELECTROMUSIC flfi »e| SSbMlSfl □DDDD4T 7 J 1 J 77 /3 CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description


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    PDF

    CS5012A

    Abstract: CS5014 CS5016 cs5016-jp32 BT 815 transistor atl64
    Text: CS5016/14/12A 16, 14, & 12-Bit, Self-Calibrating A/D Converters Description Features - The CS5012A/14/16 are 12,14 and 16-bit monolithic an­ alog to digital converters with conversion times of 7.2 |js, 14.25 |js and 16.25 |j s . Unique self-calibration circuitry


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    PDF CS5016/14/12A 12-Bit, 16-Bit CS5016 CS5014 CS5012A 150mW CS5012A/14/16 CS501X/511X cs5016-jp32 BT 815 transistor atl64