ICS9169C-273
Abstract: ICS9169CJ-273 ICS9169CM-273
Text: Integrated Circuit Systems, Inc. ICS9169C-273 Frequency Generator for Pentium Based Systems General Description Features The ICS9169C-273 is a low-cost frequency generator designed specifically for Pentium based chip set systems. The integrated buffer minimizes skew and provides all the
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ICS9169C-273
ICS9169C-273
ICS9169CM-273
ICS9169CJ-273
ICS9169CJ-273
ICS9169CM-273
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ICS9169C-273
Abstract: ICS9169CJ-273 9169c-273
Text: Integrated Circuit Systems, Inc. ICS9169C-273 Frequency Generator for Pentium Based Systems General Description Features The ICS9169C-273 is a low-cost frequency generator designed specifically for Pentium based chip set systems. The integrated buffer minimizes skew and provides all the
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ICS9169C-273
ICS9169C-273
ICS9169CJ-273
ICS9169CJ-273
9169c-273
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU916 – April 2012 WCSP-Packaged bq24272/273 Evaluation Modules The bq24272/273 evaluation module is a complete charger module for evaluating compact, flexible, highefficiency, switch-mode charge management solution for single-cell, Li-ion and Li-polymer batteries used
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SLUU916
bq24272/273
bq2427x
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Untitled
Abstract: No abstract text available
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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IGBT 200A 1200V semikron
Abstract: diode B7
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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Untitled
Abstract: No abstract text available
Text: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)
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SiHG47N65E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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UDC 1700
Abstract: skiip gh
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
UDC 1700
skiip gh
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Untitled
Abstract: No abstract text available
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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BOSCH ABS 8.1
Abstract: Bosch 8.0 abs diagram Bosch 5.7 abs bosch abs 5.4 bosch abs sensor
Text: BMA180 Data sheet BMA180 Digital, triaxial acceleration sensor Digital, triaxial acceleration sensor Bosch Sensortec Data sheet BMA180 data sheet Oder code s 0 273 141 053 Package type 12-pin LGA Data sheet version 2.1 Document release date 10 December 2009
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BMA180
BMA180
12-pin
BST-BMA180-DS000-03
BOSCH ABS 8.1
Bosch 8.0 abs diagram
Bosch 5.7 abs
bosch abs 5.4
bosch abs sensor
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ZSA5MA27
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE ZSA5MA27 FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Unit in mm inch Direction of polarity 273 16A Cathode band(White) Type mark(White) 5 2.8 2.8
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ZSA5MA27
PDE-ZSA5MA27-0
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ZSA5MA27
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE ZSA5MA27 FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Unit in mm inch Direction of polarity 273 16A Cathode band(White) Type mark(White) 5 2.8 2.8
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ZSA5MA27
ZSA5MA27
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Untitled
Abstract: No abstract text available
Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)
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SiHW47N65E
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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SKii000
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Untitled
Abstract: No abstract text available
Text: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses
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SiHG47N65E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MB87Q3140
Abstract: MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32
Text: Fujitsu Microelectronics America, Inc. 1601 Trapelo Road Suite 273 Waltham, Ma 02451 July 19, 2006 Thuan Nguyen Qualcomm Incorporated 5775 Morehouse Drive San Diego, CA 92121-1714 Dear Thuan: The following information is intended to alleviate some confusion that has resulted regarding
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MB87Q3140RB-G.
MB87Q3141RB-G.
Node1006
Node1003
Node1007
MB87Q3140
MB87Q3141
MB87Q3141RB-GE1
xbee
TRC1000
program eeprom 24c32
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Untitled
Abstract: No abstract text available
Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses
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SiHW47N65E
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses
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SiHG47N65E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SKKT 273/16 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 274 Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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Untitled
Abstract: No abstract text available
Text: SKKT 273/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 274 A Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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MQ 6 SENSOR
Abstract: No abstract text available
Text: SEMIKRON SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1700 V IGBT & Inverse Diode V cE S SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 292 GH 170 + Driver 273 CTV 7 13 V c c 9> O perating DC link voltage
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arketin\datenbl\skiippac\sensor\d292gh
MQ 6 SENSOR
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74LS273
Abstract: 74LS273PC pin diagram of 74LS 54LS273DM 54LS273FM 74LS273DC 74LS273FC pin diagram of 74ls273
Text: 273 C O N N E C T IO N D IA G R A M P IN O U T A 54LS /74LS 273 Sir ^ 2o] Vcc OoU 8-B IT REGISTER T5]q7 DoU With Clear d tJT 13 ° 6 Ts]Q6 Qi |X D E S C R IP T IO N — T he ’273 is a h igh speed 8 -b it register, c o n s is tin g o f e ig h t D -typ e flip -flo p s w ith a c o m m o n C lo ck an d an a s y n c h ro n o u s a ctive LO W
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54LS/74LS273
20-pin
74LS273PC
74LS273DC
74LS273FC
54LS273DM
54LS273FM
54/74LS
74LS273
74LS273PC
pin diagram of 74LS
54LS273DM
54LS273FM
74LS273DC
74LS273FC
pin diagram of 74ls273
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t1d6
Abstract: No abstract text available
Text: STANDARD MICROSYSTEMS CORPORATION, 55 Marcus Blvd. nauppauge ny h7M <5161 273-3100 COM20010 •NT S DIVISION PRELIMINARY Fjx <516» 231-600« COM20010 ULANC Universal Local Area Network Controller with 1K x 8 On-Board RAM • • • • • • • • •
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COM20010
COM20010
24-Pin
28-Pin
RS485
t1d6
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Untitled
Abstract: No abstract text available
Text: 273 EHSemiconductor National ä ä 54FCT/74FCT273 Octal D Flip-Flop General Description Features The 'FCT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) input load and reset
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54FCT/74FCT273
FCT273
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol |Conditions1> IGBT & Inverse Diode VcES V c c 9 Operating D C link voltage lc Theatsink T , 3' IGBT & Diode A C, 1 min. V is o i4 If ~ 25 C = 25 °C Theatsink —25 °C; tp < 1 ms tp = 10 ms; sin,; Tj = 150 °C
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