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    2716 2K EPROM RETENTION Search Results

    2716 2K EPROM RETENTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    MC2716M/BJA Rochester Electronics LLC 2716M - 2Kx8 EPROM - Dual marked (7802201JA) Visit Rochester Electronics LLC Buy
    D2716-1 Rochester Electronics LLC 2716 - 2K X 8 EPROM Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy

    2716 2K EPROM RETENTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    EEPROM 2816 CMOS

    Abstract: CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil DS1220Y-150 DS1220Y-150+ DS1220Y-200 DS1220Y-200+ DS1220Y-200IND DS1220Y-200IND+ EEPROM 2816 CMOS CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND

    2816 eeprom

    Abstract: EEPROM 2816 CMOS DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom EEPROM 2816 CMOS DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom CI EEPROM 2816 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil 100pF DS1220Y 24-PIN 2816 eeprom CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y-100 DS1220Y-120

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 720-mil A0-A10 100ns 120ns

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220AB-100 DS1220AD DS1220AB DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 ICC01
    Text: DS1220AB/AD 16k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) 100ns 120ns 2816 eeprom CI EEPROM 2816 DS1220AB-100 DS1220AD DS1220AB DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 ICC01

    CI EEPROM 2816

    Abstract: eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 100ns 120ns 150ns CI EEPROM 2816 eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120

    DS1220

    Abstract: DS1220AB DS1220AD-120 ICC01 DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) DS1220 E99151. 200ns DS1220AB/AD 720-MIL DS1220AB DS1220AD-120 ICC01 DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100

    2716 eeprom

    Abstract: eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND
    Text: 19-5579; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		PDF DS1220Y 24-pin 2716 eeprom eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND

    2716 eeprom

    Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) DS1220AB/AD 720-MIL 24-PIN 2716 eeprom DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01

    EEPROM 2816 CMOS

    Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) DS1220AB/AD 720-MIL 24-PIN EEPROM 2816 CMOS DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01

    dallas date code DS1220AD

    Abstract: No abstract text available
    Text: 19-5580; Rev 10/10 DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com PIN ASSIGNMENT FEATURES • •          10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) MDT24 dallas date code DS1220AD

    CI EEPROM 2816

    Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y 24-PIN CI EEPROM 2816 eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y-100 DS1220Y-120

    2816 eeprom

    Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
    Text: DS 1220AB/AD DALLAS DS1220AB/AD ^ s e m ic o n d u c to r FEATURES Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF 1220AB/AD DS1220AB/AD 24-pin DS1220AD) DS1220AB) 2816 eeprom IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic

    gr281

    Abstract: static ram 4802 pd446 4016 RAM
    Text: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible


    OCR Scan     		PDF 24-pin GR281 static ram 4802 pd446 4016 RAM

    ram 8416

    Abstract: No abstract text available
    Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


    OCR Scan     		PDF GR281-4 24-pin GR281 PD446 ram 8416

    pin diagram of ic 2716

    Abstract: intel 2716 eprom
    Text: ER5716 ER5716IR ER5716HR G IN IR A I INS1 K liM l M PRELIMINARY INFORMATION 16K N-Channel Electrically Erasable and Programmable ROM FEATURES ELEC. ALTERABLE NON-VOLATILE MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ • ■ PIN C O N FIG UR A TIO N 2048 w ord x 8 bit organization, fu lly decoded


    OCR Scan     		PDF ER5716 ER5716IR ER5716HR 300ns 300mW HN48016 ER5716IR/HR A0-A10 ER5716 ER5716IR pin diagram of ic 2716 intel 2716 eprom

    gr281

    Abstract: GR281, 2K x 8
    Text: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout


    OCR Scan     		PDF 24-pin GR281 15/iS. GR281, 2K x 8

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D ALLAS DS1220Y 16K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc 1 24 § Vcc A6 1 2 23 1 AB A7 i • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin DS1220Y 24-PIN 720MIL) 010TNA

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc A7 1 A6 | A5 | s A4 1 24 1 VCC • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns Vcc11. DS1220Y 24-PIN

    1220Y

    Abstract: DS1220
    Text: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y DS1220Y 24-PIN A0-A10 1220Y DS1220

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF 24-pin DS1220Y AS1220XTjR-jSS^ DS1220Y

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I


    OCR Scan     		PDF DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns temperatu20Y DS1220Y