26M TRANSISTOR Search Results

MO-187

Abstract: ZXT14P40DX ZXT14P40DXTA ZXT14P40DXTC DSA003747
Contextual Info: ZXT14P40DX SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 26m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXTP19060CFF

Abstract: ZXTN19060CFF ZXTN19060CFFTA
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

ceh2288

Contextual Info: CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS ON = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package.

TRANSISTOR MARKING 1d8

Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
Contextual Info: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to

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ZXTN19060CFF

Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

Contextual Info: CEM6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 8A, RDS ON = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

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Contextual Info: CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS ON = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: ZXTP19020DFF 20V, SOT23F, PNP medium pow er transistor Summary BV CEO > -20V BV ECO > -4V IC cont = 5.5A V CE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to

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CEM8938

Contextual Info: CEM8938 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).

CEM8938

Contextual Info: CEM8938 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).

Contextual Info: JMGST-26M Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . 6 7 [8] 9 10 . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product

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CEM3138

Abstract: 75a17
Contextual Info: CEM3138 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9.1A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).

CEM4600

Abstract: TF36
Contextual Info: CEM4600 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).

Contextual Info: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)

Contextual Info: JMGAPD-26M Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 [2] 3 4 5 . 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This