26FEB07 Search Results

Contextual Info: 4 TH IS DRAWING 3 IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - 2 - LOC RESERVED. CM BY TYCO ELECTRONICS CORPORATION. DIST R E V IS IO N S 00 LTR D REVISED PER D E SC RIPTIO N DATE DWN APVD E C Q -0 7 -0 0 3 7 2 9 26FEB07 KW

BFS17

Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
Contextual Info: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)

Contextual Info: CC3 Vishay Electro-Films CHIP RESISTORS Thin Film 0505 Size Resistor on Alumina FEATURES • Chip size: 0.050 inches square • Resistance range: 30 Ω to 125 kΩ Product may not be to scale • Alumina substrate • Low stray capacitance: < 0.2 pF • Resistor material: nichrome

74375

Abstract: SiA443DJ 74375 datasheet
Contextual Info: SPICE Device Model SiA443DJ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74420

Abstract: DG2735 DG2736 HP4192A JESD78
Contextual Info: DG2735/DG2736 Vishay Siliconix Low Voltage, 0.6 Ω, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2735/2736 are low voltage, low on-resistance, dual single-pole/double-throw SPDT monolithic CMOS analog switches designed for high performance switching of analog

HP4192A

Abstract: JESD78 10EN4 DG2788
Contextual Info: DG2788/DG2789 Vishay Siliconix Low Voltage, Low On-Resistance, Dual DPDT/Quad SPDT Analog Switch DESCRIPTION The DG2788/DG2789 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high speed, low onresistance and small physical size, the DG2788/DG2789 are

BAT46

Abstract: BAT46-TAP BAT46W-V DO35 LL46 BAT46 VISHAY
Contextual Info: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

DG467

Abstract: dg468dv-t1-e3 DG467DV DG467DV-T1-E3 DG468DV DG468
Contextual Info: DG467/DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/single- • • • • • • • throw SPST switches. On resistance is 10 Ω maximum and flatness is 2 Ω max over the specified analog signal range.

Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

74373

Abstract: v1482 1/LM 74373
Contextual Info: SPICE Device Model SUU/SUD50P04-34 Vishay Siliconix P-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: ZXCT1081 EV1 ZXCT1081EV1 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXCT1081EV1 is intended for the evaluation of the ZXCT1081 device. The ZXCT1081 is a high side current monitor providing a fixed voltage gain of 10. There is a second 50mΩ resistor that can be selected

M1006

Abstract: 18KWR0327 DM6030HK TS3332LD XM1006-BD XM1006-BD-000V XM1006-BD-EV1 M1006b
Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

material for chip resistors

Abstract: Chip Resistors stray capacitance
Contextual Info: CC5 Vishay Electro-Films CHIP RESISTORS Thin Film 1010 Size Resistor on Alumina FEATURES • Chip size: 0.100 inches square • Resistance range: 50 Ω to 1M Ω Product may not be to scale • Alumina substrate • Low stray capacitance: < 0.2 pF • Resistor material: nichrome

M1004-BD

Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

BAT81S-TAP

Abstract: BAT81S-TR BAT82S BAT83S DO35 BAT81S
Contextual Info: BAT81S/82S/83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component

85659

Abstract: Diode BAT41 BAT41 BAT41-TAP BAT41-TR DO35 LL41 bat41 600
Contextual Info: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against excessive voltage, such as electrostatic

ARM LPC2148 application notes

Abstract: Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148
Contextual Info: LPC2109/2119/2129 Single-chip 16/32-bit microcontrollers; 64/128/256 kB ISP/IAP flash with 10-bit ADC and CAN Rev. 06 — 10 December 2007 Product data sheet 1. General description The LPC2109/2119/2129 are based on a 16/32-bit ARM7TDMI-S CPU with real-time

Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: CAT3644 4-Channel Ultra High Efficiency Quad-Mode LED Driver DESCRIPTION FEATURES „ „ „ „ „ „ „ „ „ „ „ The CAT3644 is a high efficiency Quad-Mode® fractional charge pump that can drive up to four LEDs programmable by a one wire digital interface. The

Contextual Info: ZXCT1041 EV1 ZXCT1041EV1 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXCT1041EV1 is intended for the evaluation of the ZXCT1041 device. The ZXCT1041 is a high side bidirectional current monitor providing a fixed voltage gain of 10. The device produces a voltage output proportional to the

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T RESERVED. REVISIO N S 00 C O R P O R A T IO N . D E S C R IP T IO N R R EV PE R R EV IS ED

GDE 49

Abstract: GENERAL SEMICONDUCTOR MARKING bfm marking code GGt 521
Contextual Info: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C

BAT85S

Abstract: BAT85S-TAP BAT85S-TR DO35
Contextual Info: BAT85S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367