269-3 SO8 Search Results

pin diode gamma detector

Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Contextual Info: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6

TDA1308

Abstract: TDA1308T TDA1545A IEC134 dip 4814 MBC-18 TDA1308 application notes
Contextual Info: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has

CEM9953A

Contextual Info: CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS ON = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

FDS6912A

Contextual Info: FAIRCHILD June 1998 S E M I C D N D U C T O R tm FDS6912A Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level M O S F E T s are produced using Fairchild Semiconductor's advanced PowerTrench process that has been

TPP25011

Abstract: ST microelectronics diodes 129
Contextual Info: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY

TPP25011

Contextual Info: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY

TPP25011

Abstract: 220V 30A Relay
Contextual Info: TPP25011  Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY

marking code sgs

Abstract: TPP25011 MARKING SO8
Contextual Info: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY

MOSFET 4604

Abstract: 4604 mosfet
Contextual Info: LF PA K 56 BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: LF PA K 56 BUK9Y107-80E N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

TDA1310A

Abstract: TDA1310AT BP317
Contextual Info: Philips Semiconductors Preliminary specification Stereo Continuous Calibration DAC CC-DAC TDA1310A FEATURES GENERAL DESCRIPTION • Space saving package DIL8 or SO8 The TDA1310A is a device of a new generation of Digital-to-Analog Converters (DACs) which embodies the

I740

Abstract: IRU1150 IRU1150CM IRU1150CP IRU1150CS
Contextual Info: IRU1150 4A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR PRELIMINARY DATASHEET DESCRIPTION FEATURES The IRU1150 is a 4A regulator with extremely low dropout voltage using a proprietary bipolar process that achieves comparable equivalent on-resistance to that of

PNP transistor 269

Abstract: LM393 LM2903T lm293t LM393ANN LM393 motorola
Contextual Info: M M O T O R O LA Low Offset Voltage Dual Comparators The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range-to-ground level with single supply operation.

Contextual Info: FDS2672 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description ̈ Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize

Contextual Info: LM185/LM285/LM385 Adjustable Micropower Voltage References General Description The LM185/LM285/LM385 are micropower 3-terminal adjustable band-gap voltage reference diodes. Operating from 1.24 to 5.3V and over a 10µA to 20mA current range, they feature exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight

Contextual Info: FDS2672_F085 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description ̈ Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize

FDS2672

Contextual Info: FDS2672_F085 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description „ Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize

Amplifier thermocouple op177

Abstract: OP177 OP177FP OP177FS OP177GP OP177GS OP41 REF01 OP-177G OP177G
Contextual Info: a Ultraprecision Operational Amplifier OP177 PIN CONNECTIONS Epoxy Mini-DIP P Suffix 8-Pin SO (S-Suffix) FEATURES Ultralow Offset Voltage: TA = 25؇C: 25 ␮V Max Outstanding Offset Voltage Drift: 0.1 ␮V/؇C Max Excellent Open-Loop Gain and Gain Linearity:

Contextual Info: ALPHA SEMICONDUCTOR AS2955 Excellence in Analog Power Products 350mA Low Drop Out Voltage Regulator Advanced Information - Production 2Q ‘97 FEATURES APPLICATI • • • • • • • • • • • Battery • CordU Output Accuracy 5V, 350mA Output

IC TB 1237 AN

Contextual Info: f Z 7 7# ^ S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI­

PCA1534P

Abstract: PCA1534 martin
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA153X series 32 kHz clock circuit Product specification Supersedes data of October 1988 File under Integrated Circuits, IC16 Philips Semiconductors January 1994 Philips Semiconductors Product specification 32 kHz clock circuit

EF73321C

Abstract: HDB3 EF73321 HL 941 EF73321P EF7333 PLCC20 PLCC-28 PLCC44
Contextual Info: f Z ^ 7 7 # S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI­

TDA1308 application notes

Abstract: A 2531 0601 tda1308 IEC134 TDA1308T TDA1545A 35VRL
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1308 Class AB stereo headphone driver Product specification File under Integrated Circuits, IC01 Philips Semiconductors August 1994 Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES

BP317

Abstract: MS-012AA TDA8011T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8011T IF amplifier for satellite TV receivers Product specification File under Integrated Circuits, IC02 Philips Semiconductors February 1995 Philips Semiconductors Product specification IF amplifier for satellite TV receivers