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    Vision Research Corporation VG264265BJ-35

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    VG264265

    Abstract: VG264265BJ VG264265B 264265BJ VG26426
    Text: V G 264265BJ 262,144 x 16-Bit CMOS Dynamic RAM Description T h e device is C M O S Dynam ic RA M organized as 2 6 2 ,1 4 4 words X 16 bits with extended data out access m ode. It is fabricated with an advanced submicron C M O S technology and advanced C M O S circuit design technologies. It is packaged in JE D E C standard 40-pin


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    PDF 264265BJ 16-Bit 40-pin 35/40/45/50ns 1G5-0017 VG264265 VG264265BJ VG264265B VG26426

    64mb edo dram simm

    Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
    Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt


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    PDF VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm