Si4768CY
Abstract: No abstract text available
Text: Si4768CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES APPLICATIONS D D D D D D D D D D D Power Supplies - Computer Auxillary - Notebook, Tablet, Desktop, Server - Point-Of-Load - Multiphase 0- to 30-V Operation
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Si4768CY
SO-16
18-Jul-08
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Si4732CY
Abstract: 5050ez Si4732
Text: Si4732CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES D D D D D D D D D D 0- to 30-V Operation Under-Voltage Lockout Shoot Through Resistant Fast Switching Times SO-16 Package Driver Impedance—3 W 30-V MOSFETs
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Si4732CY
SO-16
18-Jul-08
5050ez
Si4732
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Si4738CY
Abstract: 215S1
Text: Si4738CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES D D D D D D D D D D 0- to 20-V Operation Under-Voltage Lockout Shoot Through Resistant Fast Switching Times SO-16 Package Driver Impedance—3 W 20-V MOSFETs
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Si4738CY
SO-16
18-Jul-08
215S1
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Si4770CY
Abstract: 5050ez Si4770DY
Text: Si4770CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES APPLICATIONS D D D D D D D D D D D Power Supplies - Computer Auxillary - Tablet, Desktop, Server - Point-Of-Load - Multiphase 0- to 20-V Operation Under-Voltage Lockout
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Si4770CY
SO-16
18-Jul-08
5050ez
Si4770DY
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Untitled
Abstract: No abstract text available
Text: i, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Controlled Rectifiers Reverse Blocking Thyristors 2N6400 Series Designed primarily for half-wave ac control applications, such as
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2N6400
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K 2056 transistor
Abstract: measure thyristor 36rc crowbar UL-497B thyristor 308 thyristor k 202 TVB025RSC-L TVB006RSC-L K 2056
Text: SiBar Thyristor Surge Protectors TVBxxxRSC-L Series Circuit Protection's SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These
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TVB400RSC-L
UL497B,
E179610
R21/2A
K 2056 transistor
measure thyristor
36rc
crowbar
UL-497B
thyristor 308
thyristor k 202
TVB025RSC-L
TVB006RSC-L
K 2056
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syntron rectifier
Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES
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1R10 diode
Abstract: No abstract text available
Text: REFERENCE DATA KV 1 8 3 2K S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. TOKO PART NUMBER 3. APPLICATIONS 4. STRUCTURE 5. PACKAGE OUTLINE 6. PIN LAYOUT S IG N A T U R E DATE 7. PACKAGE OUTLINE DIM ENSIONS/ Drawn By MARKING Û H 8. ABSOLUTE MAXIMUM RATINGS
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DB3-K046
diodeKV1832K.
QH7-V008.
DP3-K002.
1R10 diode
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SV229 Unit in mm Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Band Radio F e a tu r e s • Ultra Low Series Resistance : rs = 0.2iî Typ. • Useful for Small Size Set Absolute Maximum Ratings (Ta = 25 C) CHARACTERISTIC
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1SV229
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating VCEO -4 0 Vdc Em itter-Base Voltage Ve b O - 4 .0 Vdc 'c -1 0 0 m Adc Collector C urrent — C ontinuous Unit MMBTA70LT1 CASE 318-07, STYLE 6 SOT-23 TO-236AA THERMAL CHARACTERISTICS Characteristic
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MMBTA70LT1
OT-23
O-236AA)
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KDV804M
Abstract: KDV804S w5fe kec marking SOT
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDV804M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. KDV804M FEATURES MILLIMETERS • Low Series Resistance : rs=0.3 TYP. .
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KDV804M/S
OT-23.
KDV804M
O-92M
KDV80
10juA
100MHz
KDV804M
KDV804S
w5fe
kec marking SOT
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Untitled
Abstract: No abstract text available
Text: surface mount t 2l COMPATIBLE Wee DIP LOCIC DELAY LINE # T2L FAST in p u t and o u tp u t # Delays stable and precise # SO-14 pin pattern # Wee DIP package .235 high # A vailable in delays from 5 to 500ns The SMFLDL-TTL is offered in 76 delays from 5 to 500ns. Delay
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SO-14
500ns
500ns.
C/090694
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BAV70WT1 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode Motorola Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Max Reverse Voltage Rating VR 70 Vdc Forward Current If 200 mAdc iFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board (1)
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BAV70WT1
SC-7Q/SOT-323
BAV70
BAV70WT1 motorola
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol Value Unit C o lle ctor-E m itter Voltage v CEO -4 5 Vdc C ollector-Base Voltage v CBO -6 0 Vdc v EBO - 5 .0 Vdc 'c - 800 m Adc Em itter-Base Voltage C ollector C urrent — C ontinuous BCW68GLT1 CASE 318-07, STYLE 6 SOT-23 TO-236AB
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BCW68GLT1
OT-23
O-236AB)
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385H
Abstract: IRFD120
Text: PD-9.385H International [rag Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Description
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IRFD120
0-27O
385H
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DIODE ZENER bz 148
Abstract: bz 148 Zener diode 27C18 bz 148 diode 27C10P
Text: s BZD27C S E R IE S TAIWAN SEMICONDUCTOR RoHS 0.8 Watts Voltage Regulator Diodes COM PLIANCE Sub SM A Hu: Fe a tu re s •fr ❖ ❖ ❖ ❖ ❖ <=• S ilic o n z e n e r di odes Lo w profile su rface -m o u n t p a c k a g e Z e n e r an d su rg e c u rren t sp ecificati o n
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BZD27C
DIODE ZENER bz 148
bz 148 Zener diode
27C18
bz 148 diode
27C10P
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MOCD211
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OCD211/D SEMICONDUCTOR TECHNICAL DATA MOCD211 Dual Channel Small Outline Optoisolators [CTR = 20% Min] Transistor Output M o to r o la P r e fe r r e d D e v ic e These devices consist of tw o gallium arsenide infrared emitting diodes
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OCD211/D
RS481A
MOCD211/D
MOCD211
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Untitled
Abstract: No abstract text available
Text: LM H2191 LMH2191 Dual Channel 52 MHz Clock Tree Driver Texa s In s t r u m e n t s Literature Number: SNAS485C LMH2191 Dual Channel 52 MHz Clock Tree Driver General Description Features The LMH2191 isadual-channelclocktreedriverthatsupplies a digital system clock to peripherals in mobile handsets or
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H2191
LMH2191
SNAS485C
LMH2191
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Untitled
Abstract: No abstract text available
Text: L M H 6 6 1 8 ,L M H 6 6 1 9 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Texa s In s t r u m e n t s Literature Number: SNOSAV7C Sem iconductor LM H 6618 S in g le /L M H 6 6 1 9 Dual 130 M Hz, 1.25 m A RR IO O pera tio n al A m p lifie rs
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LMH6618
Single/LMH6619
LMH6618
LMH6619
LMH6619
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Untitled
Abstract: No abstract text available
Text: LM V 1089 LMV1089 Dual Input, Far Field Noise Suppression Microphone Amplifier with Automatic Calibration Capability T ex a s In s t r u m e n t s Literature Number: SNAS441H t Semiconductor LMV1089 Dual Input, Far Field Noise Suppression Microphone Am plifier with Autom atic Calibration Capability
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LMV1089
SNAS441H
LMV1089
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Untitled
Abstract: No abstract text available
Text: LM 49101 LM49101 Mono Class AB Audio Subsystem with a True Ground Headphone Amplifierand Earpiece Switch Te x a s In s t r u m e n t s Literature Number: SNAS475 t LM49101 a l Semiconductor March 23, 2009 B O O m r Audio Power Amplifier Series M ono C lass A B A u d io S ub syste m w ith a T rue G round
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LM49101
SNAS475
LM49101
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