marking A07
Abstract: BAS116
Text: BAS116 0.225mW Surface Mount Switching Diode Pb RoHS SOT-23 COMPLIANCE Features Low leakage current applications Medium speed witching times Marking: JV Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified.
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BAS116
225mW
OT-23
25oCambient
100uA
150mA
BAS116)
marking A07
BAS116
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PDF
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BZX85C
Abstract: No abstract text available
Text: Preliminary BZX85C SERIES 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix
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Original
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BZX85C
DO-41
DO-41
MIIL-STD-202,
25oCambient
300us
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT42WS/BAT43WS Pb 0.2W Surface Mount Flat Lead Fast Switching Schottky Barrier Diode RoHS COMPLIANCE SOD-323F Features Low forward voltage drop Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1
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BAT42WS/BAT43WS
OD-323F
OD-323F
25oCambient
BAT42WS
BAT43WS)
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PDF
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RS606
Abstract: DATA SHEET rs607 RS601 RS602 RS603 RS604 RS605 RS607
Text: RS601 THRU RS607 SINGLE – PHASE BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 6.0 Amperes RS-6 Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Plastic material has Underwriters Laboratory Flammability
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RS601
RS607
25oCambient
RS602
RS603
RS604
RS605
RS606
RS607
DATA SHEET rs607
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PDF
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surge 105
Abstract: MBRF5100
Text: MBRF5100 - MBRF5200 Pb RoHS Isolation 5.0 AMPS. Schottky Barrier Rectifiers ITO-220AC COMPLIANCE Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction
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Original
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MBRF5100
MBRF5200
ITO-220AC
260oC/10
ITO-220AC
MIL-STD-750,
MBRF5100
MBRF5150-MBRF5200
50mVp-p
surge 105
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV100/101/102/103 500mW.Hermetically Sealed Glass High Voltage Switching Dides MINI MELF Features High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction
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BAV100/101/102/103
500mW
25oCambient
BAV100/101/102/103)
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PDF
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15822
Abstract: low barrier schottky
Text: BAS85 Silicon Schottky Barrier Diode MINI MELF Features For general applications Low turn-on voltage PN junction guard ring Mechanical Data Dimension in millimeters Glass case Weight: 0.05g approx Maximum Ratings and Electrical Characteristics
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BAS85
25oCambient
540K/W
15822
low barrier schottky
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PDF
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BZX85C
Abstract: BZX85C12 BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1
Text: BZX85C3V3 - BZX85C 5 6 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix
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Original
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BZX85C3V3
BZX85C
DO-41
MIIL-STD-202,
25oCambient
300us
BZX85C12
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
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PDF
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202E
Abstract: No abstract text available
Text: 1A1 THRU 1A7 SILICON RECTIFIERS Voltage Range – 50 to 1000 Volts Current – 1.0 Amperes Features • High reliability • Low leakage • Low forward voltage drop • High current capability Mechanical Data • Case: Molded plastic black body • Lead: MIL-STD 202E method 208C guaranteed.
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Original
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25oCambient
202E
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV100/101/102/103 500mW Hermetically Sealed Glass High Voltage Switching Diodes Pb RoHS MINI MELF COMPLIANCE Features High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction
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Original
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BAV100/101/102/103
500mW
25oCambient
BAV100/101/102/103)
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PDF
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202E
Abstract: 1a5s
Text: 1A1S THRU 1A7S SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • • • • High reliability Low leakage Low forward voltage drop High current capability Mechanical Data • Case: Molded plastic black body
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Original
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25oCambient
202E
1a5s
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV19WS/BAV20WS/BAV21WS Pb RoHS COMPLIANCE 0.2W Surface Mount Flat Lead High Voltage Switching Diode SOD-323F Features Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1 Clip bonding construction, good thermal
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Original
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BAV19WS/BAV20WS/BAV21WS
OD-323F
OD-323F
25oCambient
Cur001
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PDF
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diode RGP 20
Abstract: diode RGP 10j diode RGP 202E RGP10A RGP10M
Text: RGP10A THRU RGP10M FAST RECOVERY PLASTIC RECTIFIERS SINTERED GLASS JUNCTION Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • High temperature metallurgically bonded construction Sintered glass cavity free junction. • Capability of meeting environmental standard of
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RGP10A
RGP10M
MIL-S-19500.
350oC/10sec/0
25oCambient
diode RGP 20
diode RGP 10j
diode RGP
202E
RGP10M
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PDF
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LS4148
Abstract: ls91 LS4448 LS914B
Text: LS4448 /LS4148/LS914B Pb 500mW Hermetically Sealed Glass Fast Switching Diodes RoHS COMPLIANCE QUADRO MINI MELF Features Fast switching device TRR< 4.0nS Quadro Mini-MELF package Surface device type mounting Hermetically sealed glass
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LS4448
/LS4148/LS914B
500mW
25oCambient
LS4148
LS4448
LS4148
ls91
LS914B
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PDF
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MELF Package
Abstract: LL4448
Text: LL4448 500mW Hermetically Sealed Glass Fast Switching Diodes Pb RoHS MINI MELF COMPLIANCE Features Fast Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surface are corrosion
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Original
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LL4448
500mW
25oCambient
100mA
MELF Package
LL4448
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PDF
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Untitled
Abstract: No abstract text available
Text: SS13M/SS14M/SS16M Pb RoHS 1.0Amp Surface Mount Schottky Barrier Rectifier COMPLIANCE MicroSMA Features Very low profile typical height of 0.60mm Ideal for automated placement Low forward voltage drop, low power losses, high efficiency. Meets MSL level 1, per J-STD-020C, lead free
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Original
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SS13M/SS14M/SS16M
J-STD-020C,
260oC
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
150oC
SS13M
SS16M)
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PDF
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BAT42
Abstract: BAT43
Text: BAT42 / BAT43 Pb RoHS COMPLIANCE 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode DO-35 Features Low forward voltage drop DO-35 package JEDEC Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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Original
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BAT42
BAT43
DO-35
DO-35
25oCambient
BAT42/BAT43
BAT43
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PDF
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marking a6
Abstract: bas16 a6 marking A07 BAS16
Text: BAS16 Surface Mount Switching Diode Pb RoHS SOT-23 COMPLIANCE Features Fast switching speed For general purpose switching applications High conductance Marking: A6 Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics
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Original
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BAS16
OT-23
25oCambient
100uA
150mA
BAS16)
marking a6
bas16 a6
marking A07
BAS16
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PDF
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W005M
Abstract: W01M W02M W04M W06M W08M W10M
Text: W005M THRU W10M 1.5A SINGLE-PHASE SILICON BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Amperes Features • Surge overload rating – 50 amperes peak • Ideal for printed circuit boards • Reliable low cost construction utilizing molded
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Original
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W005M
25oCambient
W01M
W02M
W04M
W06M
W08M
W10M
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT42 / BAT43 Pb RoHS COMPLIANCE 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode DO-35 Features Low forward voltage drop DO-35 package JEDEC Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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Original
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BAT42
BAT43
DO-35
DO-35
25oCambient
BAT42/BAT43
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PDF
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202E
Abstract: No abstract text available
Text: 1A1S THRU 1A7S SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • • • • High reliability Low leakage Low forward voltage drop High current capability Mechanical Data • Case: Molded plastic black body
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Original
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25oCambient
202E
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PDF
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JESD22-B102D
Abstract: J-STD-002B JESD22-B102
Text: SSL13M Pb RoHS 1.0Amp Surface Mount Schottky Barrier Rectifier COMPLIANCE MicroSMA Features Very low profile typical height of 0.60mm Ideal for automated placement Low forward voltage drop, low power losses, high efficiency. Meets MSL level 1, per J-STD-020C, lead free
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Original
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SSL13M
J-STD-020C,
260oC
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
SSL13M)
125oC
JESD22-B102D
JESD22-B102
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PDF
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Untitled
Abstract: No abstract text available
Text: SD103AW - SD103CW 400mW Schottky Barrier Switching Diode SOD-123 0.022 0.55 Typ. Min. 0.053(1.35) Max. Features Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time Low reverse capacitance
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SD103AW
SD103CW
400mW
OD-123
OD-123,
SD103BW
SD103CW
25oCambient
200mA
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PDF
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BZX85C 12v
Abstract: BZX85C BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1
Text: BZX85C3V3 - BZX85C 5 6 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix
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Original
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BZX85C3V3
BZX85C
DO-41
MIIL-STD-202,
25oCambient
300us
BZX85C 12v
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
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PDF
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