25OCAMBIENT Search Results
25OCAMBIENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking A07
Abstract: BAS116
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BAS116 225mW OT-23 25oCambient 100uA 150mA BAS116) marking A07 BAS116 | |
BZX85CContextual Info: Preliminary BZX85C SERIES 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix |
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BZX85C DO-41 DO-41 MIIL-STD-202, 25oCambient 300us | |
Contextual Info: BAT42WS/BAT43WS Pb 0.2W Surface Mount Flat Lead Fast Switching Schottky Barrier Diode RoHS COMPLIANCE SOD-323F Features Low forward voltage drop Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1 |
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BAT42WS/BAT43WS OD-323F OD-323F 25oCambient BAT42WS BAT43WS) | |
RS606
Abstract: DATA SHEET rs607 RS601 RS602 RS603 RS604 RS605 RS607
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RS601 RS607 25oCambient RS602 RS603 RS604 RS605 RS606 RS607 DATA SHEET rs607 | |
surge 105
Abstract: MBRF5100
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MBRF5100 MBRF5200 ITO-220AC 260oC/10 ITO-220AC MIL-STD-750, MBRF5100 MBRF5150-MBRF5200 50mVp-p surge 105 | |
Contextual Info: BAV100/101/102/103 500mW.Hermetically Sealed Glass High Voltage Switching Dides MINI MELF Features High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction |
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BAV100/101/102/103 500mW 25oCambient BAV100/101/102/103) | |
15822
Abstract: low barrier schottky
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BAS85 25oCambient 540K/W 15822 low barrier schottky | |
BZX85C
Abstract: BZX85C12 BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1
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BZX85C3V3 BZX85C DO-41 MIIL-STD-202, 25oCambient 300us BZX85C12 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1 | |
202EContextual Info: 1A1 THRU 1A7 SILICON RECTIFIERS Voltage Range – 50 to 1000 Volts Current – 1.0 Amperes Features • High reliability • Low leakage • Low forward voltage drop • High current capability Mechanical Data • Case: Molded plastic black body • Lead: MIL-STD 202E method 208C guaranteed. |
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25oCambient 202E | |
Contextual Info: BAV100/101/102/103 500mW Hermetically Sealed Glass High Voltage Switching Diodes Pb RoHS MINI MELF COMPLIANCE Features High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction |
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BAV100/101/102/103 500mW 25oCambient BAV100/101/102/103) | |
202E
Abstract: 1a5s
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25oCambient 202E 1a5s | |
Contextual Info: BAV19WS/BAV20WS/BAV21WS Pb RoHS COMPLIANCE 0.2W Surface Mount Flat Lead High Voltage Switching Diode SOD-323F Features Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1 Clip bonding construction, good thermal |
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BAV19WS/BAV20WS/BAV21WS OD-323F OD-323F 25oCambient Cur001 | |
diode RGP 20
Abstract: diode RGP 10j diode RGP 202E RGP10A RGP10M
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RGP10A RGP10M MIL-S-19500. 350oC/10sec/0 25oCambient diode RGP 20 diode RGP 10j diode RGP 202E RGP10M | |
LS4148
Abstract: ls91 LS4448 LS914B
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LS4448 /LS4148/LS914B 500mW 25oCambient LS4148 LS4448 LS4148 ls91 LS914B | |
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MELF Package
Abstract: LL4448
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LL4448 500mW 25oCambient 100mA MELF Package LL4448 | |
Contextual Info: SS13M/SS14M/SS16M Pb RoHS 1.0Amp Surface Mount Schottky Barrier Rectifier COMPLIANCE MicroSMA Features Very low profile typical height of 0.60mm Ideal for automated placement Low forward voltage drop, low power losses, high efficiency. Meets MSL level 1, per J-STD-020C, lead free |
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SS13M/SS14M/SS16M J-STD-020C, 260oC 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 150oC SS13M SS16M) | |
BAT42
Abstract: BAT43
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BAT42 BAT43 DO-35 DO-35 25oCambient BAT42/BAT43 BAT43 | |
marking a6
Abstract: bas16 a6 marking A07 BAS16
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BAS16 OT-23 25oCambient 100uA 150mA BAS16) marking a6 bas16 a6 marking A07 BAS16 | |
W005M
Abstract: W01M W02M W04M W06M W08M W10M
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W005M 25oCambient W01M W02M W04M W06M W08M W10M | |
Contextual Info: BAT42 / BAT43 Pb RoHS COMPLIANCE 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode DO-35 Features Low forward voltage drop DO-35 package JEDEC Through-hole device type mounting Hermetically sealed glass Compression bonded construction |
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BAT42 BAT43 DO-35 DO-35 25oCambient BAT42/BAT43 | |
202EContextual Info: 1A1S THRU 1A7S SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • • • • High reliability Low leakage Low forward voltage drop High current capability Mechanical Data • Case: Molded plastic black body |
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25oCambient 202E | |
JESD22-B102D
Abstract: J-STD-002B JESD22-B102
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SSL13M J-STD-020C, 260oC 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D SSL13M) 125oC JESD22-B102D JESD22-B102 | |
Contextual Info: SD103AW - SD103CW 400mW Schottky Barrier Switching Diode SOD-123 0.022 0.55 Typ. Min. 0.053(1.35) Max. Features Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time Low reverse capacitance |
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SD103AW SD103CW 400mW OD-123 OD-123, SD103BW SD103CW 25oCambient 200mA | |
BZX85C 12v
Abstract: BZX85C BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1
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BZX85C3V3 BZX85C DO-41 MIIL-STD-202, 25oCambient 300us BZX85C 12v BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1 |