25MAY2001 Search Results

Contextual Info: 4 T H IS DRAWING C RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,1 9 LOC ALL RIGHTS RESERVED. DI ST CE 16 REVISIONS F BARE BUFFER DE SC RI PT IO N LTR REVISED PER 0UB0-0304-01 DATE DWN AP VD 25MAY2001 TA SB BOOT

AN1995

Abstract: M25P40
Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)

ecp30

Abstract: M25P20 ST10
Contextual Info: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 2 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (2 Mbit) in 3 s (typical)

Numonyx AN1995

Abstract: VDFPN8 numon AN1995 VFQFPN8 6x5mm MLP8 M25P20 NUMONYX 0126E
Contextual Info: M25P20 2 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Feature summary „ 2 Mbit of Flash Memory „ Page Program up to 256 Bytes in 0.8 ms (typical) „ Sector Erase (512 Kbit) in 0.6 s (typical) „ Bulk Erase (2 Mbit) in 3 s (typical)

Numonyx AN1995

Abstract: M25P40 AN1995
Contextual Info: M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum „ Page Program (up to 256 bytes) in 0.8 ms

M25P40

Abstract: ST10 VDFPN
Contextual Info: M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ 4 Mbit of Flash Memory Page Program up to 256 Bytes in 1.5ms (typical) Sector Erase (512 Kbit) in 1s (typical) Bulk Erase (4 Mbit) in 4.5s (typical)

serial flash M25P10

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

AI04091

Contextual Info: M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ 4 Mbit of Flash Memory Page Program up to 256 Bytes in 1.5ms (typical) Sector Erase (512 Kbit) in 1s (typical) Bulk Erase (4 Mbit) in 4.5s (typical)

M25P20 VDFPN8

Contextual Info: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512 Kbit) in 1s (typical) Bulk Erase (2 Mbit) in 3s (typical)

Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ Page Program up to 256 Bytes in 1.5 ms (typical) ■ Sector Erase (512 Kbit) in 1 s (typical) ■ Bulk Erase (4 Mbit) in 4.5 s (typical)

AN1995

Abstract: M25P40
Contextual Info: M25P40 4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ 2.3 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ Page Program (up to 256 bytes) in 1.5 ms

M25P20

Abstract: ST10
Contextual Info: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRODUCT PREVIEW FEATURES SUMMARY • 2 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (2 Mbit) in 4 s (typical)

AN1995

Abstract: M25P20 vdfpn8
Contextual Info: M25P20 2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 2 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (2 Mbit) in 3s (typical)

PSEUDO SRAM

Abstract: M36W832B M36W832T
Contextual Info: M36W832T M36W832B 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 8 Mbit (512K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■

M25P40

Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)

Contextual Info: M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 40 MHz SPI Bus Interface FEATURES SUMMARY • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 5s (typical)

AI04038

Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (512 Kbit) in 2 s (typical)

Numonyx AN1995

Contextual Info: M25P20 2 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Feature summary „ 2 Mbit of Flash Memory „ Page Program up to 256 Bytes in 0.8 ms (typical) „ Sector Erase (512 Kbit) in 0.6 s (typical) „ Bulk Erase (2 Mbit) in 3 s (typical)

M25P20

Abstract: ST10 M25P
Contextual Info: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 2 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (2 Mbit) in 3 s (typical)

M25P20

Abstract: ST10 SO8w
Contextual Info: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ 2 Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512 Kbit) in 1s (typical) Bulk Erase (2 Mbit) in 3s (typical)

M25P40

Abstract: ST10
Contextual Info: M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (4 Mbit) in 5 s (typical)

AN1511

Abstract: M25P05 M25P05-A ST10
Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs as described in application note AN1511 .

AN1511

Abstract: M25P10 M25P10-A ST10 serial flash M25P10
Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P10-A in all future designs as described in application note AN1511 .

Numonyx AN1995

Abstract: numonyx m25p40 Numonyx MLP8 package AN1995 M25P40 03JA
Contextual Info: M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum „ Page Program (up to 256 bytes) in 0.8 ms