znr k 391 varistor
Abstract: znr k 201 varistor znr k 431 VARISTOR 275 K10 znr k 431 varistor ERZC25EK911 ZNR - K 431 ERZC25EK431 ERZC25EK201 znr k 270
Text: ÒZNRÓ Transient/Surge Absorbers Type E ÒZNRÓ Transient /Surge Absorbers Type: E The ZNR Type E is capable of handling larger surge energy than the Type D in applications for protection of electronic equipment or semiconductor devices from switching and induced lightning surges.
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UL1449
E86821
LR-92226
znr k 391 varistor
znr k 201 varistor
znr k 431
VARISTOR 275 K10
znr k 431 varistor
ERZC25EK911
ZNR - K 431
ERZC25EK431
ERZC25EK201
znr k 270
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fuses
Abstract: 40A fuse MV055F2DAX300E A3354730 MV055F2DAX400E MV055F1DAX150E
Text: Circuit Protection UL/CSA Fuses Current Limiting 5.5kV E-Rated Medium Voltage Fuses UL/CSA Fuses General Purpose Dia. In 2 2 2 2 2 2 2 2 2 2 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 # of Clip Barrels Center (In) 1 12 1 12 1 12 1 12 1 12 1 12 1 12 1 12 1 12 1
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MV055F1CAX5E
MV055F1CAX7E
MV055F1CAX10E
MV055F1CAX15E
MV055F1CAX20E
MV055F1CAX25E
MV055F1CAX30E
MV055F1CAX40E
MV055F1CAX50E
MV055F1CAX65E
fuses
40A fuse
MV055F2DAX300E
A3354730
MV055F2DAX400E
MV055F1DAX150E
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DDR3 DIMM SPD JEDEC
Abstract: DDR3 DIMM SPD PC3-12800 DDR3 SPD sensor DDR3 SODIMM SPD JEDEC micron ddr3 DDR3 1600 spd 144PIN micron quad die ddr3 DDR2 SODIMM SPD JEDEC DDR3 SPD sensor datasheet
Text: DDR3 Module Part Numbering System The part numbering system is available at DDR3 SDRAM modules MT 8 J TF 512 64 A Y - 1G1 A 1 Micron Technology Printed Circuit Board Revision Designator Number of Memory Components
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PC3-14900
Abstract: pc3-10600 DDR3 DIMM SPD DDR3 DIMM SPD LRDIMM LRDIMM SPD LRDIMM DDR3-1866 DDR3-2133 DDR3-1866 RDIMM SPD JEDEC minidimm
Text: DDR3 Module Part Numbering System The part numbering system is available at www.micron.com/numbering DDR3 SDRAM modules MT 8 J TF 256 64 A Z - 1G4 A 1 Micron Technology Printed Circuit Board Revision Designator Number of Memory Components Process Technology
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N2B3
Abstract: No abstract text available
Text: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb
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MT41J512M4
MT41J256M8
78-ball
09005aef82fcca5a/Source:
09005aef82ed0bfa
MT41J512M4
N2B3
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82-ball
Abstract: 82ball
Text: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb
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MT41J1G4
MT41J512M8
82-ball
09005aef83188bab/Source:
09005aef83169de6
MT41J1G4
82ball
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703B
Abstract: No abstract text available
Text: 1 FOX ELECTRONICS 25E D • 3701=122 DD0G3S3 0 ■ ' T : S 0 - 2 . > TCXO / TEMPERATURE COMPENSATED OSCILLATOR FOX Temperature Compensated Crystal Oscillators feature a highly stable output over wide variations in temperature. Applications for FOX TCXO’s are in
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SQ-23
703B
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BUK437-600B
Abstract: ATIC BUK437-600A
Text: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
0D2032S
BUK437-600A
BUK437-600B
BUK437
-600A
-600B
OT-93;
T-39-15
BUK437-600B
ATIC
BUK437-600A
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Untitled
Abstract: No abstract text available
Text: T FOX ELEC T R O N IC S 25E II • 3701152 000Ü3S3 0 ■ ' T ?S 0 - 2 .> TCXO / TEMPERATURE COMPENSATED OSCILLATOR FOX Temperature Compensated Crystal Oscillators feature a highly stable output over wide variations in temperature. Applications for FOX TCXO’s are in
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Frequency-10
Hz-20
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EIGHT MOSFET ARRAY
Abstract: octal MOSFET ARRAY AN0132NAR EIGHT n-channel MOSFET ARRAY Mosfet Array 15 pin 10X10
Text: A T & T MELEC I C 25E P • ODSOQEb DG02fl4T 1 ■ OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY AN0132NAR ADVANCE T-H3-ZS Monolithic N-Channel Enhancement-Mode Description The AN0132NAR Octal High-Voltage N-Channel M OSFET Array contains eight Independent N-Channel DM OS drivers
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005002b
AN0132NAR
AN0132NAR
AN0132NAR,
EIGHT MOSFET ARRAY
octal MOSFET ARRAY
EIGHT n-channel MOSFET ARRAY
Mosfet Array 15 pin
10X10
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PIC1657
Abstract: PIC1664 PIC SERIES PIC1655 PIC15
Text: MICROCHIP TECHNOLOGY INC 25E D b l 0 3 5 0 1 0004*102 1 " F W & Microchip 8-Bit Microcontroller -tt-o g PIC1655 FEATURES PIN CONFIGURATION • User programmable • Intelligent controller for stand-alone applications • 32 8-bit RAM registers • 512 x 12-bit program ROM
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12-bit
to110
PIC1655
PIC1655.
DS30006B-15
bl03201
OQG4T17
PIC156X
PIC1655
PIC1657
PIC1664
PIC SERIES
PIC15
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zener 2a7
Abstract: p6smb110 9AL zener diode P6SMB6.8A P6SMB10 P6SMB10A P6SMB11 P6SMB11A P6SMB12 P6SMB12A
Text: MOTOROLA SC DIOtES/OPTO b3b?55S 0001341 1 25E t O rd er th is d a ta sh eet b y P 6S M B 6.8 /D MOTOROLA SEMICONDUCTOR T-il-ti TECHNICAL DATA P6SMB6.8,A Zener Overvoltage Transient Su p p re sso rs thru P6SMB200,A The P6SMB6.8 series is designed to protect voltage sensitive com ponents from high
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00013m
241SI
zener 2a7
p6smb110
9AL zener diode
P6SMB6.8A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
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6MBI15-060
Abstract: 2MBI200-060 2mb1100 2MB1100-060 6MBI100-060 6MBI30-060 2MBI300-060 2MBI50-060 6MBI50-060 2MB1150-060
Text: COLLMER SEMICONDUCTOR I N C 25E D • S23Û7T5 0001103 b ■ IG B T M O D U L E S R atin g s and S p e c ific a tio n s | 1 | 6 0 0 volts class IG B T m odules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for
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2MBI50-060
6MBI15-060
6MBI20-060
6MBI30-060
6MBI50-060
6MBI75-060
6MBI100-060
2MBI200-060
2mb1100
2MB1100-060
2MBI300-060
2MB1150-060
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2mbi200 060
Abstract: 6MBI20-060 6MBI100-060 6mb175 6MBI15-060 2mb175 2mb1300 2mb1200 2mb150 2MBI200-060
Text: I COLLMER SEMICONDUCTOR IN C 25E D • S23Û7T5 0D011D3 b ■ IG B T M O D U L E S R atin g s and S p e c ific a tio n s | 1 | 6 0 0 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for
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0D011D3
2MBI50-060
6MBI20-060
6MBI30-060
6MBI50-060
6MBI75-060
6MBI100-060
2mbi200 060
6mb175
6MBI15-060
2mb175
2mb1300
2mb1200
2mb150
2MBI200-060
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se70p161 ic
Abstract: No abstract text available
Text: TEXAS INSTR UC/UP 25E D • 611=1755 O O V b t l M 4 ■ T - W - iÿ -S I Appendix C TMS70x1 Devices The T M S 7 0 x 1 devices include the T M S 7 0 0 1 , T M S 7 0 4 1 , and the S E 7 0 P 1 6 1 . These devices contain the same features as the T M S 7 0 x 0 devices, and en
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TMS70x1
44-Pin
se70p161 ic
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO b 3b ? 5 5 S 0 0 0 1 3 m 25E D 1 Order this data sheet by P6SMB6.8/D MOTOROLA SEM IC O N D U C T O R mmm T -il' TECHNICAL DATA P6SIVIB6.8,A Zen er O v e rv o lta g e T ran sie n t S u p p r e s s o rs thru P6SM B200,A The P6SMB6.8 series is designed to protect voltage sensitive components from high
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for
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BY229F
BY229Fâ
LLS3T31
bt53131
QD2531S
002531b
T-03-17
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labinal
Abstract: No abstract text available
Text: LABINAL/CINCH CONNECTORS 2se D • 531LiT22 0 0 Q 0 b l 3 2 ■ DURA-CON High Reliability .050" 1 27mm Density All-Plastic MIL-C-83513 Solder Cup/Wire D-Microminiature" Features • Solder Cup, gold plated solid wire, and insulated wire leads for cable-to-cable
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531LiT22
MIL-C-83513
MIL-C-83513
labinal
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r57n
Abstract: AT&T power module dc-dc converter step up 12v in 48v out D-48VDC
Text: A T & T MELEC CMPNT/PÜJR ES E D Data Sheet 912A Power Module: DC-DC Converter; 48 Vdc Input, 12 Vdc Output, 12 W 10-15 WATTS Features • Small size: 2.2” x 3.0” x 0.7” ■ UL recognized: Standard 1012 (to 40°C) ■ Meets FCC Class A requirements
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r-57-n
0G2S371
r57n
AT&T power module
dc-dc converter step up 12v in 48v out
D-48VDC
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Untitled
Abstract: No abstract text available
Text: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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tbS3T31
BUK437-600A
BUK437-600B
BUK437
-600A
-600B
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VAM-03
Abstract: DDA010 VAM03 TL31 LA 4108 KDS 5.000 VAM02 ka bs 89 TL46 WO 8 94 00 KDS 8.000
Text: NEWBRIDGE MICROSYSTEMS SSE D • bSäfllOl 0 D G 0 7 3 1 3 ■ CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF T-52-33-S5 Complete VMEbus address and data Interface, exeept buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transfer rate
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0DG0731
CA91C015
31-longword
T-5Z-33-S5
CA91C015
CA91C014
VAM-03
DDA010
VAM03
TL31
LA 4108
KDS 5.000
VAM02
ka bs 89
TL46 WO 8 94 00
KDS 8.000
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BYV92-300
Abstract: BYV92 100 m2131 BYV92 BYV92-500U 28-UNF
Text: ^ N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D • ■ Il bbS3T31 0022bbl □ ■ II B Y V 9 2 ShHlbS ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery
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BYV92-300
BYV92
Q022btjfl
m2134
m2135
m2136
BYV92 100
m2131
BYV92-500U
28-UNF
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TMS27256
Abstract: No abstract text available
Text: T TE XA S INS TR UC/UP 2SE D 0^1722 QGV'ìSMT I TMS370CX32 8 -BIT MICROCONTROLLERS T -V 7 -/7 -0 * FEBRUARY 1990 • • TMS370 Configured Microcontroller — PACT Module — A/D Module — Data EEPROM Module FN AND FJ PACKAGES (TOP VIEW) LU (/} 00 S f f l l O ' f O N i - Q r lu a . Û . O L Q . £ L C L Q . a . > < Û tr o o o o o o o o P o
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TMS370CX32
TMS370
TMS27256
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BUK437-600B
Abstract: BUK437 BUK437-600A Trt-100 t34 transistor IE-07 T34 diode
Text: N AMER P H I L I P S / D I S C R E T E 2SE bbS3T31 0D2032S D 7 B U K 437-600A B U K 437-600B P ow erM O S tra n s isto r T - S * ? - ]S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
0D2032S
BUK437-600A
BUK437-600B
BUK437
-600A
-600B
OT-93;
Trt-100
t34 transistor
IE-07
T34 diode
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