256KWORDS Search Results

Contextual Info: in te l A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked Architecture

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

micron memory sram

Abstract: micron sram MT28C3214P2FL MT28C3214P2NFL FW431
Contextual Info: 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL MT28C3214P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

micron memory

Abstract: micron memory sram micron sram SRAM ID REading MT28C3224P18 MT28C3224P20
Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3224P20 MT28C3224P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture

Hitachi DSA00164

Contextual Info: HM67S18258 Series 4M Synchronous Fast Static RAM 256k-words x 18-bits ADE-203-661B(Z) Product Preview, Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

1024X256

Contextual Info: MEMORY 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RA CMOS 2-Bank of 262,144-Word x 32 Bit Synchronous Graphie Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphie Random Access Memory SGRAM containing 16,777,216 memory cells accessible in an 32-bit tormat. The MB81G163222 teatures a fully synchronous

D14D

Abstract: CXD1852Q MD10 MD11 MD14 ha3120
Contextual Info: CXD1852Q MPEG1 Decoder For the availability of this product, please contact the sales office. Description The CXD1852Q is a single-chip MPEG1 decoder with a built-in CD-ROM decoder which allows decoding of MPEG1 system, video and audio layers. A built-in CD-ROM decoder enables direct connection

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

Contextual Info: Ä E W Ä I M I I O G M f ô K iû Â î r O O M in te i A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs

Advanced Linear Devices cross

Abstract: MT28C3224P18 MT28C3224P20 FBGA 63 FY448
Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3224P20 MT28C3224P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture

FY449

Abstract: FY446 28c32-2 slb 250 9b
Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3224P20 MT28C3224P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture

DS05-12102-3E

Abstract: mb81g163222-80
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

Contextual Info: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT 256K X 16 , 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V—3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Production

Contextual Info: AdWAKHSS OMF<§»ÄFO [K] in te l A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive • x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Optimized High Density Blocked

FY422

Abstract: micron sram MT28C3214P2FL FW431 FY437 FX431
Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

N04C1630E3AM

Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x04 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 4Mb (256Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range

N04C1630E1AM

Abstract: N04C1630E1AM-9TI 16K-PAGE
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04C1630E1AM Advance Information N04C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

Contextual Info: HM67S18258 Series 4M Synchronous Fast Static RAM 256k-words x 18-bits HITACHI ADE-203-661B(Z) Product Preview, Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation

TE28F800B3B150

Contextual Info: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT 256K X 16 , 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible Sm artVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V Vpp Fast Production

Contextual Info: MEMORY CMOS 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CM OS 2-Bank of 262,144-W ord x 32-Bit Synchronous Graphic Random Access M em ory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

Contextual Info: MEMORY CMOS 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CM OS 2-Bank of 262,144-W ord x 32 Bit Synchronous Graphic Random Access M em ory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

AP-657

Abstract: Intel Stacked CSP 28F1602C3 28F3204C3 29066
Contextual Info: E PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 n n n n n Flash Memory Plus SRAM  Reduces Board Design Complexity n Stacked Die, Chip Scale Package  Smallest Possible Memory

Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

231-33

Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04C1630E1AM Advance Information N04C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View