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    256KBIT SRAM Search Results

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    FM28V020-T

    Abstract: No abstract text available
    Text: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit 32Kx8 28-pin -T28G) 32-pin FM28V020-T PDF

    FM28V020-SG

    Abstract: FM18L08 FM28V020 FM28V020-SGTR FM28V020-T FM28V020-TGTR
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit 32Kx8 33MHz FM28V020 FM28V020-TG, FM28V020-T A09316340282 FM28V020-SG FM18L08 FM28V020-SGTR FM28V020-T FM28V020-TGTR PDF

    FM28V020-TG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-TG AEC-Q100-002 FM18L08 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003 PDF

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit 32Kx8 33MHz 32Kx8 28-pin FM28V020 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    FM28V020-SG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM28V020 256Kbit 33MHz FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-SG AEC-Q100-002 FM18L08 FM28V020-SGTR PDF

    AN1012

    Abstract: M48Z32V
    Text: M48Z32V 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, and powerfail control circuit ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		M48Z32V 256Kbit 32Kbit M48Z32V: 44-pin AN1012 M48Z32V PDF

    AN1012

    Abstract: M48Z32V
    Text: M48Z32V 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, and powerfail control circuit ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		M48Z32V 256Kbit 32Kbit M48Z32V: 44-pin AN1012 M48Z32V PDF

    Untitled

    Abstract: No abstract text available
    Text: µPSD325X Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM FEATURES SUMMARY • The µPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM, general


    Original     		PSD325X 256Kbit PSD325X 16-bit 32KByte 52-lead, PDF

    M48T35AY

    Abstract: M48T35AV SOH28
    Text: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		M48T35AV 256Kbit 32Kbit M48T35AY: M48T35AV: PCDIP28 M48T35AY M48T35AV SOH28 PDF

    THE M48Z

    Abstract: AN1012 M48Z35 M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: PCDIP28 28-lead PCDIP28: M48Z35 THE M48Z AN1012 M48Z35Y SOH28 PDF

    mod 8 ring counter using JK flip flop

    Abstract: AI07802 programmable multi pulse waveform generator cpld uPSD TQFP52 TQFP80 220 resistor array
    Text: µPSD325X Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM FEATURES SUMMARY • The µPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM, general


    Original     		PSD325X 256Kbit PSD325X 16-bit 32KByte 52-lead, mod 8 ring counter using JK flip flop AI07802 programmable multi pulse waveform generator cpld uPSD TQFP52 TQFP80 220 resistor array PDF

    FM1808

    Abstract: FM1808-70-P FM1808-70-S MS-011 MS-013
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric


    Original     		FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 FM1808-70-P FM1808-70-S MS-011 MS-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 28-piness PDF

    SOH28

    Abstract: M48Z35AV
    Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


    Original     		M48Z35AV 256Kbit 32Kbit 28-lead PCDIP28 M48Z35AV: SOH28 M48Z35AV PDF

    M48Z35

    Abstract: M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


    Original     		M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28 PDF

    FM24C256

    Abstract: FM24C256-S FM24C64 MS-013
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24C256 256Kb 256Kbit FM24C256 256-kilobit FM24C256-S FM24C64 MS-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Billion 1011 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24C256 256Kb 256Kbit FM24C256 256-kilobit PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1808B PDIP 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention @ +75 C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pin FM1808B 256-kilobit PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 PDF

    FM24C256-SE

    Abstract: FM24C256 FM24C256-S FM24C64
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24C256 256Kb 256Kbit FM24C256 256-kilobit FM24C256-SE FM24C256-S FM24C64 PDF