256K-BYTE SRAM Search Results

BR2325

Contextual Info: 1. VARIATION Part Number LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 E S * LWB201 E S * Memory Size 6 4K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128KX 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit

PCMCIA CARD, Static Memory, write protect switch

Abstract: PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery
Contextual Info: PCMCIA/JEIDA LOW VOLTAGE STATIC RAM 1. VARIATION Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128K x 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit MIX MIX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS

Contextual Info: GS880E18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS880F18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable

MN102H730FGT

Abstract: MN102H73G MN102H73K MN102HF73G
Contextual Info: MN102H730FGT, MN102H73G, MN102H73K MN102H730FGT Type Internal ROM type ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73G External MN102H73K MN102HF73G Mask ROM 128K  10K TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K

Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable

Contextual Info: GS88118B T/D /GS88132B(T/D)/GS88136B(T/D) 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable

Contextual Info: PCMCIA/JEIDA STATIC RAM 1. VARIATION Part N um ber A W B 0 6 5 E S * A W B 1 2 9 E S * A W B 2 5 7 E S * A W B 5 1 3 E S * AWB101 E S * AW B201 E S * D escription M em ory Size 64K 128K 256K 5 1 2K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE 32K 64K 128K 256K

Contextual Info: M em ory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE D escription 32K 64K 128K 256K 512K 1M X X X X X X 16 16 16 16 16 16 bit bit bit bit bit bit MIX M IX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS CMOS W ID E W ID E W ID E W ID E W IDE W ID E

GENERAL ELECTRIC OCR 125 KW

Contextual Info: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K  10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A

MN102HF73K

Abstract: MN102HF73G MN102H73 MN102H730FGT MN102H73G MN102H73K TQFP128-P
Contextual Info: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K  10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A

STMc2

Abstract: i486
Contextual Info: Æ 7 SGS-THOMSON ^7# RfflD g^(Q [E[Li(gïï^(S)iD(gi STCM128 STCM256 128K/256K BYTE L2 CACHE RAM MODULE WITH TAG PRODUCT CONCEPT • 128K BYTE and 256K BYTE LEVEL-2 i486 CACHE MODULES ■ SUPPORTS BURST CACHE LINE FILLS; FAST ACCESS TIME 15ns, TAG ACCESS

Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

gun sound effects generator

Abstract: CPU 1825 sunplus program rom
Contextual Info: SPF20A 63K MUSIC SYNTHESIZER GENERAL DESCRIPTION The SPF20A is a fully CMOS integrated circuit. It uses advanced design and process technology to combine an 8-bit RISC processor, a 4-channel music synthesizer, 256K-byte program ROM, 160-byte working SRAM,

Contextual Info: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT

IS61LPS25632A

Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

6C69

Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LPS25632A

Abstract: IS61LPS25636A
Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write