Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    256K X 18 Search Results

    256K X 18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F020-90/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    CY7C0853AV-100BBI Rochester Electronics CY7C0853 - Flex36 3.3V 256K X 36 Synchronous Dual-Port RAM, Industrial Temp Visit Rochester Electronics Buy

    256K X 18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1361V25

    Abstract: CY7C1363V25 CY7C1365V25
    Text: 329 CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device


    Original     		PDF CY7C1361V25 CY7C1363V25 CY7C1365V25 36/256K 32/512K 113-MHz 117-MHz 100-MHz 80-MHz 100-pin CY7C1361V25 CY7C1363V25 CY7C1365V25

    CY7C1361V25

    Abstract: CY7C1363V25 CY7C1365V25
    Text: CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device — 8.5 ns (for 100-MHz device)


    Original     		PDF CY7C1361V25 CY7C1363V25 CY7C1365V25 36/256K 32/512K 113-MHz 117-MHz 100-MHz 80-MHz 100-pin CY7C1361V25 CY7C1363V25 CY7C1365V25

    CY7C1361B-133AC

    Abstract: CY7C1361B CY7C1363B
    Text: CY7C1361B CY7C1363B PRELIMINARY 256K x 36/512K x 18 Flow-through SRAM Features Functional Description • Supports 133-MHz bus operations • 256K x 36/512K x 18 common I/O • Fast clock-to-output times — 6.5 ns for 133-MHz device The CY7C1361B and CY7C1363B are 3.3V, 256K x 36 and


    Original     		PDF CY7C1361B CY7C1363B 36/512K 133-MHz CY7C1361B CY7C1363B 117-MHz CY7C1361B-133AC

    Untitled

    Abstract: No abstract text available
    Text: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage


    Original     		PDF MX27L4100/27L4096 8/256K MX27L4096, MX27L4100, MX27L4100/4096 MX27L4096)

    MX27C4100DC

    Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
    Text: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •


    Original     		PDF MX27C4100/27C4096 8/256K 100uA MX27C4096, MX27C4100, MX27C4100/4096 MX27C4096) MX27C4100) 100uA PM0197 MX27C4100DC MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


    Original     		PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    MX27L4096

    Abstract: PM0307 27l41-
    Text: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage


    Original     		PDF MX27L4100/27L4096 8/256K MX27L4096, MX27L4100, MX27L4100/4096 MX27L4096) MX27L41Each MX27L4096 PM0307 27l41-

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    0436A8

    Abstract: No abstract text available
    Text: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF 85Volt IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA GA14-4662-00 0436A8

    Untitled

    Abstract: No abstract text available
    Text: È = = = = - = P relim inary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF IBM0418A81QLAA IBM0418A41 IBM0436A81QLAA IBM0436A41QLAA 512x18)

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    Untitled

    Abstract: No abstract text available
    Text: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O


    OCR Scan     		PDF IBM0418A81QLAA IBM0418A41QLAA IBM0436A81QLAA IBM0436A41QLAA 512x18)

    Untitled

    Abstract: No abstract text available
    Text: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF IBM0418A4ACLAA IBM0436A8ACLAA 0418A8ACLAA IBM0436A4ACLAA A14-4662-00

    b1l3

    Abstract: CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133
    Text: ^ _ 5r^ C Y P R F .S S CY7C1361V25 CY7C1363V25 CY7C1365V25 PBEUm m m 256K x36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32/512K x 18 common I/O » Fast clock-to-output times — 7.5 ns lor 117-MHz device


    OCR Scan     		PDF CY7C1361V25 CY7C1363V25 CY7C1365V25 36/256K 32/512K 113-MHz 117-MHz 100-MHz 80-MHz 100-pin b1l3 CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133

    Untitled

    Abstract: No abstract text available
    Text: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9


    OCR Scan     		PDF V105HJ8/9 V105HJ8/9 30-lead V10SHJ8/9 V105H

    53C256

    Abstract: 53C104 V53C104
    Text: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory


    OCR Scan     		PDF V104J8/9 V104J8/9 30-lead 53C256 53C104 V53C104

    S-1317

    Abstract: No abstract text available
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		PDF 28-pin 600mW IDT7187 200mV IDT7MP156 7MP156 S13-176 S-1317

    pd 3174

    Abstract: ACS35
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		PDF 28-pin 600mW IDT7187 IDT7MP156 200mV 7MP156 256Kx pd 3174 ACS35

    Untitled

    Abstract: No abstract text available
    Text: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature


    OCR Scan     		PDF V105AJ8/9 30-lead V105AJ8/9 V105A

    Untitled

    Abstract: No abstract text available
    Text: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • H igh-dansity 256K (256K x 1) CMOS static RAM m odule • Inputs and outputs d ire ctly TTL-com patible The IDT7MC156 is a 256K (256K x 1-bit) high-speed static RAM m odule constructed on a co-fired ceram ic substrate using four


    OCR Scan     		PDF 28-pin 600mW IDT7187s patible44 IDT7MC156 7MC156 256Kx S13-145

    KM428C258

    Abstract: No abstract text available
    Text: PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random


    OCR Scan     		PDF KM428C258 KM428C258 110ns 130ns 150ns 256IMENSIONS 40-PIN 40/44-PIN

    KM428V256

    Abstract: ram 256x8 KM428C256
    Text: KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ' Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random


    OCR Scan     		PDF KM428C256, KM428V256 KM428C/V256 40-PIN 40/44-PIN KM428V256 ram 256x8 KM428C256

    104J32

    Abstract: No abstract text available
    Text: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as


    OCR Scan     		PDF V104J32, V104J36 V104J32 72-lead V104J32/36 104J32

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation


    OCR Scan     		PDF GDDS311 V104J8/9 104J8/9 30-lead b3533Tl