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    256K 16BIT DRAM ZIP Search Results

    256K 16BIT DRAM ZIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    256K 16BIT DRAM ZIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hitachi hn27c256

    Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
    Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /


    Original     		PDF HM514100 HM514400 HM514800 HM51S4800 HM514900 HN62W4116 HN62W5016N HM62W4018N 50/40ns) hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note

    IBM PC AT schematics

    Abstract: R3041 IBM PC schematics IBM schematics 514256 486 system bus crt monitor block diagram crt monitor functional diagram crt terminal interface block diagram PC MONITOR VIDEO OUTPUT CONNECTOR
    Text: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode


    Original     		PDF R3041TM IDT79S341 20MHz 128KBytes 512KB 8/16/32-bit 16-bit R3041 24-bit IBM PC AT schematics IBM PC schematics IBM schematics 514256 486 system bus crt monitor block diagram crt monitor functional diagram crt terminal interface block diagram PC MONITOR VIDEO OUTPUT CONNECTOR

    IBM PC AT schematics

    Abstract: crt monitor circuit diagram crt monitor block diagram IBM PC schematics floppy drive emulator ibm crt monitor 514256 486 system bus R3051 R3052
    Text: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode


    Original     		PDF R3041TM IDT79S341 20MHz 128KBytes 512KB 8/16/32-bit 16-bit R3041 IBM PC AT schematics crt monitor circuit diagram crt monitor block diagram IBM PC schematics floppy drive emulator ibm crt monitor 514256 486 system bus R3051 R3052

    IBM PC AT schematics

    Abstract: R3051 R3052 R3081 514256 power supply connector 4p pc isa schematics R3041 2681 duart
    Text: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode


    Original     		PDF R3041TM IDT79S341 20MHz 128KBytes 512KB 8/16/32-bit 16-bit R3041 IBM PC AT schematics R3051 R3052 R3081 514256 power supply connector 4p pc isa schematics 2681 duart

    3654P

    Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
    Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable


    Original     		PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram

    CL480 c-cube

    Abstract: No abstract text available
    Text: 5 DRAM/ROM Interface This chapter describes the local DRAM/ROM interface bus. It details all of the signals necessary to connect the CL48x to a DRAM array and optional ROM. The memory controller in the CL48x interacts directly with external memory and generates the control signals required to access external


    Original     		PDF CL48x CL480 c-cube

    R5F61725

    Abstract: R5F72543 R5F72544 R5F72114 HD64F36079 R5S72625P144FPU R8A77850 MITSUBISHI E100 R5F35L83JFF m3776amch
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ01B0008-1200 R5F61725 R5F72543 R5F72544 R5F72114 HD64F36079 R5S72625P144FPU R8A77850 MITSUBISHI E100 R5F35L83JFF m3776amch

    R5F72543

    Abstract: r5f61725 SH7724 R5F2136Can R5F72543RKBGV R5F35L83 R8A77240D500BG 2332 prom R5F70834AD80FTV R5F70835
    Text: Renesas MPU & MCU General Catalog 2009.10 2009.10 Renesas MPU & MCU General Catalog Renesas MPU & MCU General Catalog RJJ01B0001-1200 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 11.1 Renesas Technology www.renesas.com


    Original     		PDF RJJ01B0001-1200 REJ01B0008-1200 R5F72543 r5f61725 SH7724 R5F2136Can R5F72543RKBGV R5F35L83 R8A77240D500BG 2332 prom R5F70834AD80FTV R5F70835

    cy3341

    Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C189 7C190 7C122 7C167A 7C168A cy3341 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram

    missile seeker

    Abstract: military processors SCTD002 SMJ55161 SMJ44C256 military switch 320F240 SMJ5C1008 military mcm 1553 MILITARY QUALIFIED DIP SWITCHES
    Text: TI Mi l itary Semiconductors winning missile designs with TI military semiconductors Seeker Launcher/ Aircraft Link Memory Signal Conditioning SDRAM SRAM VRAM Data Conversion A/D Data Correction gain, offset C80, ASIC EPROM Target Detection Recognition FIFO


    Original     		PDF RS-485, RS-485 54ABTH18xxx 320F240 missile seeker military processors SCTD002 SMJ55161 SMJ44C256 military switch 320F240 SMJ5C1008 military mcm 1553 MILITARY QUALIFIED DIP SWITCHES

    R8A77343DA00BG

    Abstract: R5F61725 MINI DX3 READER HEAD WIRING DIAGRAM R5F64218 R4F2113 HD6412240FA20V R8A77343DA0FBG R8A77310D333BG R8A77343DA06BG HD6417032F20V
    Text: 2011.06 Renesas Microcomputer General Catalog www.renesas.com CONTENTS Lineup 3 Renesas Development Environment 5 Application Matrix 7 SuperH Family 15 V850 MCUs 59 M32R Family 76 RX Family 78 RL78 Family 96 R8C Family 112 78K MCUs 164 M16C Family 221 H8SX Family


    Original     		PDF R01CS0001EJ0201 R8A77343DA00BG R5F61725 MINI DX3 READER HEAD WIRING DIAGRAM R5F64218 R4F2113 HD6412240FA20V R8A77343DA0FBG R8A77310D333BG R8A77343DA06BG HD6417032F20V

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide

    upd23c8000

    Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)


    Original     		PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000

    LA 8512

    Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER


    OCR Scan     		PDF 100ns 16Bit 32Blt 18Bit 36Bit 200ns 250ns LA 8512 samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory

    RCD 2226

    Abstract: No abstract text available
    Text: ADVANCE M T 4C 16260/1 256K X 16 DRAM M IC R O N DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES 40-Pin SOJ 40-Pin ZIP Q-6 (0-4) DQ9 1 DQ11 3 Vss 5 DQ14 • Masked Write Not Available Available 4 DQ12 6 DQ 13 B 9 Vcc 11 DQ15 12 D01 D 02 13 DQ4


    OCR Scan     		PDF 500mW MT4C16261 40-Pin RCD 2226

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C16260/1 500mW 024-cycle MT4C16261 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE l^ iic n o N 256K WIDE DRAM X MT4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical


    OCR Scan     		PDF MT4C16270/1 500mW 512-cycle MT4C16271 40-Pin

    dram zip

    Abstract: No abstract text available
    Text: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 500mW 024-cycle MT4C16261 40-Pin MT4C16260/1 dram zip

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY I^ IIC R O N 256K WIDE DRAM 256K X X MT4C16260/1 16 WIDE DRAM 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF MT4C16260/1 024-cycle MT4C16261 40-Pin 256KX

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF 512-cycle MT4C16271 40-Pin MT4C16270/1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4C16270/1 256K X 16 WIDE DRAM |U |IC = R O N WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply


    OCR Scan     		PDF MT4C16270/1 500mW 512-cycle MT4C16271 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON 256K WIDE DRAM 16 DRAM X FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 500mW active, typical


    OCR Scan     		PDF MT4C16256/7/8/9 500mW 512-cycle MT4C16257/9 MT4C16258/9 MT4C16256/7/0/9

    mt4c256

    Abstract: RCD 2226
    Text: ADVANCE 256K X M T 4C 16270/1 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process


    OCR Scan     		PDF 500mW 512-cycle MT4C16271 40-Pin mt4c256 RCD 2226