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    256KBIT Search Results

    256KBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25DN256-XMHF-B Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-MAHF-Y Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-SSHF-B Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-XMHF-T Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-SSHF-T Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
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    256KBIT Price and Stock

    ROHM Semiconductor BR24G256NUX-5TR

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24G256NUX-5TR Reel 4,000
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    ROHM Semiconductor BR24H256F-5ACE2

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24H256F-5ACE2 Reel 2,500
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    ROHM Semiconductor BR24H256FJ-5ACE2

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24H256FJ-5ACE2 Reel 2,500
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    ROHM Semiconductor BR25H256FVT-5ACE2

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR25H256FVT-5ACE2 Reel 3,000
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    ROHM Semiconductor BR25H256FJ-5ACE2

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR25H256FJ-5ACE2 Reel 2,500
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    256KBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10-15V

    Abstract: X5563 X5563S8 X5563S8I
    Text: Preliminary Information X5563 CPU Supervisor with 256Kbit SPI EEPROM FEATURES DESCRIPTION • Selectable watchdog time — 0.15s, 0.4s, 0.8s off • Low VCC detection and reset assertion —Four standard reset threshold voltages —Re-program low VCC reset threshold voltage


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    PDF X5563 256Kbit 256Kbits 10MHz 10-15V X5563 X5563S8 X5563S8I

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    FM24C256

    Abstract: FM24W256 FM24C256-G
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM24C256 256Kb 256Kbit FM24C256 256-kilobit FM24W256. FM24W256 FM24C256-G

    FM1808

    Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 7058 FM1808-70-P FM1808-70-S MS-011 MS-013

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


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    PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    LE25LB2562

    Abstract: No abstract text available
    Text: Ordering number : ENA1435A LE25LB2562M 256Kbit Serial SPI EEPROM SPI Bus Overview The LE25LB2562M is a 256Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is


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    PDF ENA1435A LE25LB2562M 256Kbit LE25LB2562M A1435-14/14 LE25LB2562

    HMN328D

    Abstract: No abstract text available
    Text: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write


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    PDF HMN328D 256Kbit 28Pin HMN328D 144-bit

    AK6516CF

    Abstract: EEPROM AK6516C power supply 5v X101 X110
    Text: ASAHI KASEI [AK6516C] AK6516C SPI bus 256Kbit Serial CMOS EEPROM Features … Advanced CMOS EEPROM Technology … Single Voltage Supply: 1.6V to 5.5V … 256Kbits; 32768 x 8 organization … SPI Serial Interface Compatible … Low Power Consumption 0.8µA Max. Standby mode


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    PDF AK6516C] AK6516C 256Kbit 256Kbits; AK6516CF EEPROM AK6516C power supply 5v X101 X110

    Untitled

    Abstract: No abstract text available
    Text: AT88SC0104C, AT88SC3216C, AT88SC0808C, AT88SC1616C, AT88SC0204C AT88SC0404C, AT88SC6416C AT88SC12816C, AT88SC25616C Atmel CryptoMemory Specification Datasheet Features • • A family of nine devices with user memories from 1Kbit to 256Kbit EEPROM user memory


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    PDF AT88SC0104C, AT88SC3216C, AT88SC0808C, AT88SC1616C, AT88SC0204C AT88SC0404C, AT88SC6416C AT88SC12816C, AT88SC25616C 256Kbit

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM1808 256Kb 256Kbit FM1808 256-kilobit year08, 50013G FM1808-70-PG B063050013G

    95256w6

    Abstract: 95256W
    Text: M95256 256Kbit Serial SPI Bus EEPROM With High Speed Clock FEATURES SUMMARY • Compatible with SPI Bus Serial Interface Positive Clock SPI Modes ■ Figure 1. Packages Single Supply Voltage: – 4.5 to 5.5V for M95256 – 2.5 to 5.5V for M95256-W – 1.8 to 5.5V for M95256-R


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    PDF M95256 256Kbit M95256-W M95256-R 10MHz 95256w6 95256W

    FM18W08

    Abstract: FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG
    Text: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM1808 256Kb 256Kbit 32Kx8 Unders/18/2007 FM18W08. FM18W08 FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG

    FM1808-70-SG

    Abstract: FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G
    Text: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM1808 256Kb 256Kbit 32Kx8 28-pin FM1808-70-SG FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    PDF FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08

    THE M48Z

    Abstract: AN1012 M48Z35 M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


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    PDF M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: PCDIP28 28-lead PCDIP28: M48Z35 THE M48Z AN1012 M48Z35Y SOH28

    NTE27C256-70D

    Abstract: NTE27C256-15D NTE27C256-12D
    Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,


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    PDF NTE27C256-12D, NTE27C256-15D, NTE27C256-15P, NTE27C256-70D NTE27C256 256Kbit 28-Lead NTE27C256-70D NTE27C256-15D NTE27C256-12D

    FM1808

    Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules


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    PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: IS25CD025 256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS25CD025: 32K x 8 256Kbit • Cost Effective Sector/Block Architecture


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    PDF IS25CD025 256Kbit IS25CD025: 256Kbit) -256Kb 32KByte IS25CD025-JNLE IS25CD025-JDLE IS25CD025-JNLA*

    SOH28

    Abstract: M48Z35AV
    Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


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    PDF M48Z35AV 256Kbit 32Kbit 28-lead PCDIP28 M48Z35AV: SOH28 M48Z35AV

    M48Z35

    Abstract: M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


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    PDF M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28

    Untitled

    Abstract: No abstract text available
    Text: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the


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    PDF HB56D25609A/B-85A/10A/12A 144-Word HB56A25609 HM514256A) 256Kbit HM51256) 30-pin HB56A25609A) HB56A25609B)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C256 G 256KBit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pfci IMP (Polarity pnQnnNM bli cMp a m U i pin M d output enable pin) • KM23C2S6Q: 32-pin SOP (Polarity programmable cMp enable pin and output enable pin)


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    PDF KM23C256 256KBit 32Kx8) KM23C2S& 28-pfci KM23C2S6Q: 32-pin 120ns 100pA

    Untitled

    Abstract: No abstract text available
    Text: Digital Subscriber Line ADSL APPLICATION • ADSL Asymmetrical Digital Subscriber Line Provides POTS and High Speed Data on ONE Existing Line • Does NOT Tie Up a Switched Circuit at Central Office • Data Rates to 8Mbits (Downstream) and to 256kbits (Upstream)


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    PDF 256kbits

    M6378A

    Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
    Text: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family


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    PDF 128Kbit 256Kbit 512Kbit 63P74 MSM6376 MSM6295 MSM5205 MSM6585 MSM6586 MSM6587 M6378A MSM6388 MSM62* ADPCM MSM63* ADPCM