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    256 X 4 TTL PROM MEMORY WITH 3-STATE OUTPUTS Search Results

    256 X 4 TTL PROM MEMORY WITH 3-STATE OUTPUTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    256 X 4 TTL PROM MEMORY WITH 3-STATE OUTPUTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eeprom s 130 dn 66

    Abstract: 100PF AM93LC66 4096bits
    Text: ATC AM93LC66 4096-bits Serial Electrically Erasable PROM Features General Description • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump


    Original     		PDF AM93LC66 4096-bits 93LC66X eeprom s 130 dn 66 100PF AM93LC66 4096bits

    82S126

    Abstract: N82S129 N82s129 data sheet 82S129 N82S126 70MA120 N82S126N signetics 82S129
    Text: Philips Components–Signetics ECN No. 86487 Date of Issue November 11, 1986 82S126 82S129 Status Product Specification 1K-bit TTL bipolar PROM Document No. 853–0148 Memory Products DESCRIPTION FEATURES The 82S126 and 82S129 are field programmable, which means that


    Original     		PDF 82S126 82S129 82S126 82S129 82S126) 82S129) N82S129 N82s129 data sheet N82S126 70MA120 N82S126N signetics 82S129

    ATC 24LC02

    Abstract: 24lc02 datasheet 24LC02 AM24LC02 AM24LC04 AM24LC08 AM24LC16
    Text: ATC AM24LC02 2-Wire Serial 2K-bits 256 x 8 CMOS Electrically Erasable PROM General Description Features • State- of- the- art architecture - Non-volatile data storage - Supply voltage range: 2.7V ~ 5.5V • 2 wire I2C serial interface - Providing bi-directional data transfer protocol


    Original     		PDF AM24LC02 AM24LC02 2048-bit 24LC02 ATC 24LC02 24lc02 datasheet AM24LC04 AM24LC08 AM24LC16

    ws-011

    Abstract: 256K DPRAM MATRA MHS mec 31 mec oscillator PRW 200 ERC32-based SPARC 7 001C ERC32
    Text: TSC693E Memory Controller User’s Manual for Embedded Real time 32-bit Computer ERC32 for SPACE Applications TSC693E TABLE OF CONTENTS Page 1. 1.1. 1.2. 1.3. INTRODUCTION . 5


    Original     		PDF TSC693E 32-bit ERC32) ws-011 256K DPRAM MATRA MHS mec 31 mec oscillator PRW 200 ERC32-based SPARC 7 001C ERC32

    AT28C256 rad

    Abstract: 197a8 radiation hardened prom WY smd transistor
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)


    Original     		PDF 5962R96891 197A807 28-Lead 28C256 AT28C256. AS9000, PUBS-01-B22-Q-011 MVA01-012 AT28C256 rad 197a8 radiation hardened prom WY smd transistor

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    100PF

    Abstract: AM93LC56
    Text: ATC AM93LC56 2048-bits Serial Electrically Erasable PROM Features General Description The AM93LC56 is the 2048-bit non-volatile serial EEPROM. It is manufactured by using ATC's advanced CMOS EEPROM technology. The AM93LC56 provides efficient non-volatile read/write


    Original     		PDF AM93LC56 2048-bits AM93LC56 2048-bit 93LC56X 100PF

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    27S20

    Abstract: AM27S20 Am2910
    Text: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast fuses High programming yield e Low-current PNP inputs programming Platinum-Silicide• High-current open-collectorand three-state outputs


    OCR Scan     		PDF Am27S20/21 024-Bit Am27S20 Am27S21 MIL-STD-883, 27S20 Am2910

    am27521

    Abstract: 27s21 prom 256x4 bit AM27S21 AM27S21A AMD 27S21
    Text: Am27S21 /27S21A Advanced Micro Devices 1,024-Bit 256x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs


    OCR Scan     		PDF Am27S21 /27S21A 024-Bit 256x4) Am27S21/27S21A KS000010 Am27S25/27S25A/27S25SA am27521 27s21 prom 256x4 bit AM27S21A AMD 27S21

    MB7114E

    Abstract: MB7114 MB7114-W MB7100 fujitsu ten MB711
    Text: April 1990 Edition 2 .0 FUJITSU DATASHEET MB7114E-W PROGRAMMABLE SCHOTTKY 1024-BIT READ ONLY MEMORY SCHOTTKY 1024-BIT DEAP PROM 256 WORDS x 4 BITS The Fujitsu MB7114-W is high speed Schottky TTL electrically field programmable read only memory organized as 256 words by 4-bits. With three-state outputs on the MB7114-W memory


    OCR Scan     		PDF MB7114E-W 1024-BIT MB7114-W MB7114E MB7114 MB7100 fujitsu ten MB711

    signetics 82S129

    Abstract: Signetics 82S126 82S126 prom 82S126 1K BIT TTL BIPOLAR PROM OI Bipolar Logic
    Text: Signetics 82S126 82S129 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION Th e 82S 126 and FEATURES 82S 129 are field APPLICATIONS • Address access time: 60ns max • Prototyping/volume production program mable, which m eans that custom


    OCR Scan     		PDF 82S126 82S129 82S126, signetics 82S129 Signetics 82S126 prom 82S126 1K BIT TTL BIPOLAR PROM OI Bipolar Logic

    1CE2

    Abstract: TAA 761 A 82S129A Signetics Generic I fusing procedure
    Text: Signetics 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION FEATURES APPLICATIONS The 82S126A and 82S129A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing


    OCR Scan     		PDF 82S126A 82S129A 82S129A 82S126A, 1CE2 TAA 761 A Signetics Generic I fusing procedure

    82HS641

    Abstract: 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 64K-bit TTL bipolar PROM 8192 x 8 82HS641A/B FEATURES • Random logic • Address access time: 82HS641A = 55ns max 82HS641B = 45ns max • Code conversion • Input loading: -100jiA max


    OCR Scan     		PDF 64K-bit 82HS641A/B 82HS641A 82HS641B -100jiA 82HS641 500ns 7110aEb 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs

    82S126

    Abstract: 82S129 B2S129 GDFP2-F16 GDIP1-T16 32 x 32 matrix 82S126BEA
    Text: P hilips S e m iconductors M ilita ry B ipolar M em ory Products P ro du ct specification 1 K-bit TTL bipolar PROM 256 x 4 82S126 82S129 FEATURES • Random logic • Address access time: 60ns max • Code conversion • Input loading: -150nA max • On-chip address decoding


    OCR Scan     		PDF -150nA 82S126: 82S129 82S126 82S129 82S126 600aC| B2S129 GDFP2-F16 GDIP1-T16 32 x 32 matrix 82S126BEA

    n82s129n

    Abstract: prom 82S126 Ruf2 N82S126N
    Text: Philips Components-Signetics ECN No. 86487 Date of Issue November 11, 1986 82S126 82S129 Status Product Specification 1K-bit TTL bipolar PROM Document No. 853-0148 Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126 and 82S129 are field programmable, which means that


    OCR Scan     		PDF 82S126 82S129 N82S126: N82S12 82S129 82S11 n82s129n prom 82S126 Ruf2 N82S126N

    256 x 4 TTL PROM Memory with 3-state outputs

    Abstract: 82LS135 N82LS135N
    Text: Philips Components-Signetics 82LS135 Document No. 853-0033 ECN No. 96054 Date of Issue March 14,1989 Status Product Specification 2K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82LS135 is field programmable, which means that custom patterns are


    OCR Scan     		PDF 82LS135 82LS135 750ii, 256 x 4 TTL PROM Memory with 3-state outputs N82LS135N

    82HS641B

    Abstract: 82HS641A 82HS641 "Bipolar PROM"
    Text: 82HS641A 82HS641B Signetics 64K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION Th e 82H S 641 is field program m able which m eans that custom patterns are im­ m ediately available by following the Sig­ netics G eneric II fusing Procedure. The


    OCR Scan     		PDF 82HS641A 82HS641B 64K-Bit 82HS641A 82HS641A/82HS641B 82HS641B 82HS641 "Bipolar PROM"

    27S21

    Abstract: AmZ7S21 am27521 AMD 27S21 prom 256x4 bit AM27S21 AM27S21DC AM27S21A 27s25
    Text: a Am27S21 /27S21A Adva^ 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-coliector and three-state outputs


    OCR Scan     		PDF Am27S21 /27S21A 024-Bit 256x4) /27S21A KS000010 Am27S25/27S25A/27S25SA 27S21 AmZ7S21 am27521 AMD 27S21 prom 256x4 bit AM27S21DC AM27S21A 27s25

    82S129

    Abstract: prom 82S126 signetics handbook 82S126 N82S126 N82S129 256 x 4 TTL PROM Memory with 3-state outputs N82S126N signetics 82S129 Signetics Generic I fusing procedure
    Text: Philips Components-Signetics Document No. 853-0148 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 8 2 S 1 2 6 8 2 S 1 2 9 1K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126 and 82S129 are field


    OCR Scan     		PDF 82S126 82S129 82S129 750SJ, DUT03 82S126) 82S129) prom 82S126 signetics handbook N82S126 N82S129 256 x 4 TTL PROM Memory with 3-state outputs N82S126N signetics 82S129 Signetics Generic I fusing procedure

    93Z667

    Abstract: No abstract text available
    Text: FAIRCHILD A S ch lu m b erg e r C o m p a n y 93Z667 8192 x 8-Bit Programmable Read Only Memory September 1986 PRELIMINARY INFORMATION Memory and High Speed Logic Description Connection Diagram The 93Z667 is a fully decoded 65,536-bit Programmable Read Only Memory PROM organized 8192 words by eight bits per


    OCR Scan     		PDF 93Z667 536-bit 300-mit A0-A12 93Z667

    82LS135

    Abstract: N82LS135 N82LS135D signetics PROM
    Text: Philips Components-Signetics 82LS135 Document No. 853-0033 ECN No. 96054 Date of Issue March 14, 1989 Status Product Specification 2K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82LS135 is field programmable, which means that custom patterns are


    OCR Scan     		PDF 82LS135 82LS135 N82LS135 N82LS135D signetics PROM

    Signetics Generic I fusing procedure

    Abstract: 82LS135 N82LS135 N82LS135D
    Text: Philips Components-Signetics Document No. 853-0033 ECN No. 96054 Date of Issue March 14, 1989 Status Product Specification 82LS135 2K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82LS135 is field programmable, which means that custom patterns are


    OCR Scan     		PDF 82LS135 82LS135 Signetics Generic I fusing procedure N82LS135 N82LS135D

    8x305

    Abstract: BIPOLAR MEMORY
    Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry


    OCR Scan     		PDF 8X350-40 8X350-40 8X305 8X305, 8X350 8X37X BIPOLAR MEMORY