250VJA
Abstract: irg4pc50u equivalent
Text: International IGR Rectifier PD-9.1470E IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter
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1470E
IRG4PC50U
O-247AC
250VJA
irg4pc50u equivalent
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DF2E-DC24V
Abstract: SPST RELAY 230 VAC 2A 5V Aromat DF2E-DC24V relay DF2e CF2-12V RELAY PCB DPDT 12V 255-2188-ND TT 2206 TT 2206 datasheet HJ4-L-DC24V
Text: Fig. Contact Arrange. Coil Coil Coil Resist. Curr. Voltage Ω (mA) Contact Ratings (A) 30 125 VDC VAC Additional Features Digi-Key Part No. 1 Price Each 25 50 100 Panasonic Part No. 4.46 3.37 DF2E-DC24V A DPDT 24DC 2,880 8.3 1 0.3 Sealed 255-1039-ND DPDT
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255-1039-ND
DF2E-DC24V
255-1040-ND
255-1043-ND
DK1A-12V-F
DK1A-24V-F
255-1291-ND
255-1292-ND
255-1293-ND
ST2-DC12V
DF2E-DC24V
SPST RELAY 230 VAC 2A 5V
Aromat DF2E-DC24V
relay DF2e
CF2-12V
RELAY PCB DPDT 12V
255-2188-ND
TT 2206
TT 2206 datasheet
HJ4-L-DC24V
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Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D C IR C U IT S UC2577-ADJ UNITRODE PRELIMINARY Simple Step-Up Voltage Regulator FEATURES Requires Few External Components NPN Output Switches 3.0A, 65V max • Extended Input Voltage Range: 3.0V to 40V Current Mode Operation for Improved
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UC2577-ADJ
52kHz
LM2577-ADJ
UC2577T-ADJ
TQ-220
1N5817
1N5820
MBR120P
MBR320P
1N5818
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jd 1803 IC
Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Text: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-
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143HejTHH
jd 1803 IC
cctkc
OB 3309 RP
soviet
cathode ray
siek 1
6H23
DSAGER00034
ROD PENTODE
S3 TRIO 64
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Untitled
Abstract: No abstract text available
Text: IRF830 Advanced Power MOSFET FEATURES B V DSS - 500 V ^DS on = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO ii Q ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF830
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Untitled
Abstract: No abstract text available
Text: RoHS COMPLIANT P /N : RS CUSTOMER: 3 05 -5 9 8 REV. REVISIONS APPROVED BY: REV. DESCRIPTION DATE A 2010±50 A T & BLUE -Æ N G R N /Y E L 4 I -a NOTES: BROWN 1. Z0680140 2. / i ^ K t e I R J È ® Ì R I 3. M I R ^ t l8 X 1 5 $ X ^ II® P a n t o n e 1 8 5 /ffi$ § /h í§
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Z0680140
250Vj
300dpi)
WS-002
H05VV-F
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Untitled
Abstract: No abstract text available
Text: IRF830 Advanced Power MOSFET FEATURES B ^D S S - 500 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology LO •'t Q II ♦ Lower Input Capacitance 1 .5 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V
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IRF830
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC40S
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1470E
IRG4PC50U
O-247AC
5545E
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