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    250UA Search Results

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    250UA Price and Stock

    Littelfuse Inc 0242.250UAT1

    FUSE CRTRDGE 250MA 250VAC/DC AXL
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    DigiKey 0242.250UAT1 Cut Tape 1,701 1
    • 1 $5.04
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    • 100 $2.9505
    • 1000 $2.64976
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    0242.250UAT1 Ammo Pack 500 500
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    Mouser Electronics 0242.250UAT1 584
    • 1 $5.04
    • 10 $3.86
    • 100 $2.95
    • 1000 $2.29
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    Newark 0242.250UAT1 Bulk 371 1
    • 1 $5.27
    • 10 $4.91
    • 100 $3.18
    • 1000 $3.09
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    RS 0242.250UAT1 Bulk 1
    • 1 $4.37
    • 10 $4.15
    • 100 $3.97
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    TME 0242.250UAT1 500
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    Sager 0242.250UAT1 500
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    • 1000 $2.83
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    Bourns Inc MF-R250U-AP

    PTC RESET FUSE 30V 2.5A RADIAL
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    DigiKey MF-R250U-AP Ammo Pack 3,000
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    Avnet Americas MF-R250U-AP Ammo Pack 4 Weeks 3,000
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    Mouser Electronics MF-R250U-AP
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    Newark MF-R250U-AP Reel 3,000
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    Avnet Abacus MF-R250U-AP 7 Weeks 3,000
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    Master Electronics MF-R250U-AP
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    Schneider Electric JLS36250UARD20

    MOLDED CASE CIRCUIT BREAKER 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JLS36250UARD20 Box 1
    • 1 $10325.03
    • 10 $10325.03
    • 100 $10325.03
    • 1000 $10325.03
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    Bourns Inc MF-RX012/250U-A5-0

    PTC Resettable Fuse 60VDC Bulk - Bulk (Alt: MF-RX012/250U-A5-0)
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    Avnet Americas MF-RX012/250U-A5-0 Bulk 2,500
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    Mouser Electronics MF-RX012/250U-A5-0
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    Teledyne e2v QP27C256-250/UA

    PROM, UV ERASABLE, 32K X 8, 250 NS ACCES - Rail/Tube (Alt: QP27C256-250/UA)
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    Avnet Americas QP27C256-250/UA Tube 250
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    Find more 250UA price and stock on Findchips.com

    250UA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23C321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating :60mA - Standby:250uA


    OCR Scan     		MX23C321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 A0-A20 D0-D14 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4103 Nom zener voltage:9.1V; low level zener diode low current: 250uA - low noise 1. Page 1 of 1 Enter Your Part # Home Part Number: 1N4103 Online Store 1N4103 Diodes Nom zener voltage:9.1V; low level zener diode low Transistors current: 250uA - low noise


    Original     		1N4103 250uA 1N4103 DO-204AA com/1n4103 PDF

    1n4101-1

    Abstract: 1N4627
    Text: Xw SGS-THOMSON iHG 1N 4614->1 N 4627 1N 4 0 9 9 - 1N 4118 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak­ age low noise. Zener impedance and Zener voltage specified for low level operation at lzt = 250uA.


    OCR Scan     		250mW 250uA. 1n4101-1 1N4627 PDF

    B08 REGULATOR

    Abstract: 7440430022 TS3410 inductor switching mosfet pwm schematic buck converter
    Text: TS3410 1A / 1.4MHz Synchronous Buck Converter SOT-25 Pin Definition: 1. EN 2. Ground 3. Switching Output 4. Input 5. Feedback General Description TS3410 is a high efficiency monolithic synchronous buck regulator using a constant frequency, current mode architecture. The device is available in an adjustable version. Supply current with no load is 250uA and drops to <1uA


    Original     		TS3410 OT-25 TS3410 250uA B08 REGULATOR 7440430022 inductor switching mosfet pwm schematic buck converter PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE15N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE22N60W 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE13N65FP 250uA O-220 0E-06 0E-04 0E-02 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE8N70FP 250uA O-220 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE4N73D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 730V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE4N73D 250uA O-252 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE15N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N60W 250uA O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE6N70FP 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N150 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE4N70 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE60N130FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 23A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N130FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    MX23C3210

    Abstract: No abstract text available
    Text: PRELIMINARY MX23C3210 INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating:60mA - Standby:250uA


    Original     		MX23C3210 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 D15/A-1 PM0526 MX23C3210 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX230321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max. • Current - Operating:60mA - Standby:250uA


    OCR Scan     		MX230321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 150ns 44pinSOP A0-A20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4099 Nom zener voltage:6.8V; low level zener diode low current: 250uA - low noise 7. Page 1 of 1 Enter Your Part # Home Part Number: 1N4099 Online Store 1N4099 Diodes Nom zener voltage:6.8V; low level zener diode low Transistors current: 250uA - low noise


    Original     		1N4099 250uA 1N4099 DO-204AA com/1n4099 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE60N600D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 7A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.52Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N600D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE22N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE22N60 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE6N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE6N70 250uA O-220 16Forward 100us 0E-06 0E-05 0E-04 0E-03 0E-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE60N800D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 5A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N800D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE15N73FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N73FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE15N73 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N73 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE10N60 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF