2SC42
Abstract: 2SC4252 Transistor MAV 1 kps6
Text: TO SH IBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR 2.1 ¿ 0 . 1 • Transition Frequency is High and Dependent on Current Excellently. 1 .25Ì0.1 in ID o MAXIMUM RATINGS (Ta = 25°C)
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2SC4252
2SC42
SC-70
2SC4252
Transistor MAV 1
kps6
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XBP06V1E4MR
Abstract: XBP06V1E4MR-G
Text: XBP06V1E4MR-G ETR2901-004 Transient Voltage Suppressor TVS •GENERAL DESCRIPTION Four elements in SOT-25 package (Anode Common) ■APPLICATIONS ESD protection High ESD ■ABSOLUTE MAXIMUM RATINGS ■PACKAGING INFORMATION Ta=25℃ PARAMETER SYMBOL RATINGS
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XBP06V1E4MR-G
ETR2901-004
OT-25
8/20s
IEC61000-4-2
XBP06V1E4MR
XBP06V1E4MR-G
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qe R 521 smd
Abstract: No abstract text available
Text: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O
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IXGH20N60B
IXGH20N60BS
O-247SMD*
O-247
qe R 521 smd
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Untitled
Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C
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24N100
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR PG05TBUL2 TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES 2012. 7. 25 Revision No : 1 1/2
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PG05TBUL2
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Transistor CD -120
Abstract: 2SC3125
Text: TO SH IBA 2SC3125 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 25 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS 2.5 T-nnH T,in p a li t.v n f fm MAXIMUM RATINGS (Ta = 25°C 0.5 0.3 I- SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg CHARACTERISTIC
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2SC3125
SC-59
Transistor CD -120
2SC3125
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IGO tv circuit diagram
Abstract: No abstract text available
Text: L IN E A R M O NO LITHIC IN TEG RA TED C IR C U IT S IC’s For TV Electrical Characteristics Ta=25°C Type No. Function Maximum Ratings (Ta=25”C) Symbol Item Condition min. typ. max. Unit 10 14 20 mA 8 11 Sound M ultiplex Signal P rocessing C ircu it
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AN5820
300m\V
50mVrms
AN5820
AN582
AN5822
IGO tv circuit diagram
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LQ801
Abstract: SK202 SK2-02 TB-135 470MHZ 650MHZ amplifier 15w
Text: POLYFET RF DEVICES ANALOG/DIGITAL BROADCAST TV BAND-5 AMPLIFIER TB-135 SK202->LQ801 F=470MHZ, VDS=28V, Idq=.6A 25 35 24 30 22 21 Pout 20 20 1dB compression = 15W 15 19 Gain 10 GAIN IN DB POUT IN WATTS 23 25 18 Efficiency = 23% 17 5 16 15 0.2 0.4 0.6 0.8 1
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TB-135
SK202--
LQ801
470MHZ,
650MHZ,
SK202
SK2-02
470MHZ
650MHZ
amplifier 15w
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fe201-6
Abstract: FE201-6 70
Text: FE201-6 3.5A (600V / 3.5A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Marking Large current. High reliability. Color code : White FE201-6 Applications Voitage class High speed switching +B output rectifier in TV etc
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FE201-6
fe201-6
FE201-6 70
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Untitled
Abstract: No abstract text available
Text: FE201-6 3.5A (600V / 3.5A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Marking Large current. High reliability. Color code : White FE201-6 Applications Voitage class High speed switching +B output rectifier in TV etc
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FE201-6
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Untitled
Abstract: No abstract text available
Text: FE201-6 3.5A (600V / 3.5A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Marking Large current. High reliability. Color code : White FE201-6 Applications Voitage class High speed switching +B output rectifier in TV etc
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FE201-6
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Untitled
Abstract: No abstract text available
Text: FE301-1 4A (100V / 4.0A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Large current. High reliability. Marking Color code : White Applications Voitage class FE301-1 High speed switching Audio output rectifier in TV etc
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FE301-1
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Untitled
Abstract: No abstract text available
Text: FE201-6 3.5A (600V / 3.5A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Marking Large current. High reliability. Color code : White FE201-6 Applications Voitage class High speed switching +B output rectifier in TV etc
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FE201-6
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Untitled
Abstract: No abstract text available
Text: FE301-1 4A (100V / 4.0A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Large current. High reliability. Marking Color code : White Applications Voitage class FE301-1 High speed switching Audio output rectifier in TV etc
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FE301-1
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2SC4251
Abstract: No abstract text available
Text: 2SC4251 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4251 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS 2.1 ¿ 0.1 1 .25Ì0 .1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage
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2SC4251
SC-70
2SC4251
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PDF
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Untitled
Abstract: No abstract text available
Text: Fuji Semiconductor New Products FAST RECOVERY DIODE FE301-1 4A (100V / 4.0A ) Outline Drawings ø6.4±0.2 Features ø1.4±0.1 Large current. High reliability. 7.5±0.2 25 MIN. 25 MIN. Applications High speed switching Audio output rectifier in TV etc Maximum Ratings and Characteristics
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FE301-1
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Untitled
Abstract: No abstract text available
Text: FE301-1 4A (100V / 4.0A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Large current. High reliability. Marking Color code : White Applications Voitage class FE301-1 High speed switching Audio output rectifier in TV etc
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FE301-1
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ti551
Abstract: No abstract text available
Text: HD153021F Preliminary 25-Mbps VFO with Built-in 1-7 Encoder/Decoder D e scrip tio n The HD153021F is a 25-Mbps VFO with built-in 1-7 run-length-limit encoder/decoder developed for use in magnetic disk drives. In read mode it decodes 1-7 R LL encoded data from the magnetic
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HD153021F
25-Mbps
HD153021F
ti551
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isoplus mosfet
Abstract: 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator
Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features TVJ = 25°C to TVJmax 55 VGS TC = 25°C TC = 90°C IF25 IF90 body diode TC = 25°C (body diode) TC = 90°C
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300-0055P
isoplus mosfet
12V 200A Relay
DA QG
solar inverter
solar inverter circuit
starter/generator
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IC 566 vco
Abstract: C100 HD153021F QFP80 WPC3 C
Text: HD153021F Preliminary 25-M bps VFO w ith Built-in 1-7 E ncoder/D ecoder Description The HD153021F is a 25-Mbps VFO with built-in 1-7 run-length-limit encoder/decoder developed for use in magnetic disk drives. In read mode it decodes 1-7 RLL encoded data from the magnetic
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HD153021F
25-Mbps
HD153021F
D153021F
IC 566 vco
C100
QFP80
WPC3 C
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igbt module
Abstract: SID400S12 IGBT 300A IGBT 800
Text: SID400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SID400S12
125oC
400A/us
igbt module
SID400S12
IGBT 300A
IGBT 800
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SID75N12
Abstract: V7560
Text: SID75N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SID75N12
150oC
125oC
SID75N12
V7560
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IGBT Transistor 1200V, 25A
Abstract: 6SI25N12 M5190
Text: 6SI25N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units
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6SI25N12
125oC
800A/us,
00A/us,
IGBT Transistor 1200V, 25A
6SI25N12
M5190
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SDI200N12
Abstract: No abstract text available
Text: SDI200N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SDI200N12
150oC
125oC
SDI200N12
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