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STMicroelectronics STL24N60DM2 MOSFET N-CH 600V 15A PWRFLAT HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL24N60DM2	Cut Tape	2,877		1	1 $4.13 10 $2.717 100 $4.13 1000 $1.46017 10000 $1.46017	Buy Now
	STL24N60DM2	Digi-Reel	2,877		1	1 $4.13 10 $2.717 100 $4.13 1000 $1.46017 10000 $1.46017	Buy Now
Mouser Electronics	STL24N60DM2		8,808			1 $3.02 10 $2.39 100 $1.74 1000 $1.42 10000 $1.41	Buy Now
Newark	STL24N60DM2	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STL24N60DM2		8,808		1	1 $2.96 10 $2.34 100 $1.71 1000 $1.43 10000 $1.43	Buy Now
TME	STL24N60DM2				1	1 $2.85 10 $2.56 100 $2.26 1000 $1.83 10000 $1.62	Get Quote

Avnet Silica	STL24N60DM2			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL24N60DM2			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STI24N60M2 MOSFET N-CH 600V 18A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STI24N60M2	Tube	2,180		1	1 $2.5 10 $2.5 100 $2.5 1000 $0.97 10000 $0.97	Buy Now
STMicroelectronics	STI24N60M2		345		1	1 $2.09 10 $1.14 100 $1.04 1000 $0.95 10000 $0.95	Buy Now
TME	STI24N60M2				1	1 $2.3 10 $1.83 100 $1.7 1000 $1.7 10000 $1.7	Get Quote
Avnet Silica	STI24N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STI24N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STF24N60M6 MOSFET N-CH 600V TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF24N60M6	Tube	914		1	1 $3.82 10 $3.82 100 $3.82 1000 $1.33346 10000 $1.2735	Buy Now
STMicroelectronics	STF24N60M6		374		1	1 $2.95 10 $2.95 100 $1.33 1000 $1.32 10000 $1.32	Buy Now
Avnet Silica	STF24N60M6			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF24N60M6			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STP24N60M6 MOSFET N-CH 600V TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP24N60M6	Tube	883		1	1 $3.45 10 $3.45 100 $3.45 1000 $1.18121 10000 $1.10625	Buy Now
Mouser Electronics	STP24N60M6		917			1 $1.3 10 $1.19 100 $1.16 1000 $1.15 10000 $1.1	Buy Now
Newark	STP24N60M6	Bulk			1	1 $2.21 10 $1.96 100 $1.77 1000 $1.49 10000 $1.38	Buy Now
STMicroelectronics	STP24N60M6		917		1	1 $1.27 10 $1.17 100 $1.14 1000 $1.14 10000 $1.14	Buy Now
Avnet Silica	STP24N60M6			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STW24N60M6 MOSFET N-CH 600V TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STW24N60M6	Tube	593		1	1 $4.37 10 $2.881 100 $4.37 1000 $1.64282 10000 $1.526	Buy Now
STMicroelectronics	STW24N60M6		651		1	1 $2.8 10 $2.14 100 $1.73 1000 $1.71 10000 $1.71	Buy Now
TME	STW24N60M6				1	1 $2.95 10 $2.66 100 $2.11 1000 $1.91 10000 $1.91	Get Quote
Avnet Silica	STW24N60M6			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STW24N60M6			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 24N60 price and stock on Findchips.com

24N60 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
24N60	IXYS	Hiperfast IGBT Short Circuit Soa Capability	Original	PDF
24N60C3	Infineon Technologies		Original	PDF
24N60D1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
24N60D1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

24N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
24N60 Abstract: 24N60A 1365c Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	24N60 24N60A 24N60 24N60A 1365c
IXGH24N60B Abstract: RG10 Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	24N60B O-247 728B1 IXGH24N60B RG10
24N60 Abstract: IXGH24N50B IXGH24N60B Text: HiPerFASTTM IGBT IXGH24N50B 24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B
IXGH24N60CD1 Abstract: ISOPLUS247 Text: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	24N60CD1 ISOPLUS247TM IXGH24N60CD1 ISOPLUS247
c2548 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1
C4080 Abstract: No abstract text available Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET	Original	PDF	24N60C5M O-220 20070704a C4080
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	ISOPLUS247TM 24N60C IC110 E153432
W2515 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1
G20N60 Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48	Original	PDF	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
24N60CD1 Abstract: IXGH24N60CD1 Text: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	PDF	24N60CD1 IC110 O-268 O-247 IXGH24N60CD1
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	PDF	24N60C5M O-220
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	24N60C ISOPLUS247TM IC110 728B1
Untitled Abstract: No abstract text available Text: High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE sat tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	24N60B 24N60BD1 728B1
Untitled Abstract: No abstract text available Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	24N60C5M O-220 20090209d

931 diode smd Abstract: g20n60 Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient	OCR Scan	PDF	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60
6008B Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C	OCR Scan	PDF	24N60AU1 6008B
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
24N50 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH	OCR Scan	PDF	24N50BU1 24N60BU1 24N50 24N60 -247A 24N50 IXGH24N50BU1 IXGH24N60BU1
Untitled Abstract: No abstract text available Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C	OCR Scan	PDF	24N60A 24N60A 24N60AU1 4bflb22b
Untitled Abstract: No abstract text available Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	24N60CD1
smd diode JC 0p Abstract: DIODE SMD GEM IXGH24N60AU1S Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600	OCR Scan	PDF	24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S
XSH24N60 Abstract: 24n60 Text: P IX Y S HiPerFAST IGBT IXSH 24N60 IXSH 24N60A v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V " ces Tj = 25° C to 150° C 600 V VCGR Tj = 2 5°C tO 150°C; RGE= 1 Mi2 600 V vGES	OCR Scan	PDF	24N60 24N60A O-247 /XSH24N60 24N60A IXSH24N60U1 IXSH24N60AU1 XSH24N60
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT IXSH 24N60 IXSH 24N60A VC E S ^C25 V CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability G_ Sym bol Test Conditions Maximum Ratings V ces Tj = 25°C to 15 0CC 6 00 V v CGR T j = 25°C to 150°C; R GE = 1 M Q 600 V v GES	OCR Scan	PDF	24N60 24N60A O-247 24N60U1 24N60AU1
D1488 Abstract: No abstract text available Text: IZ IJ X Y S HiPerFAST IGBT Lights peed™ Series IXGH 24N60C IXGT 24N60C V CES ^C25 V CE sat typ * fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	24N60C Cto150Â 13/10Nm/lb O-247 O-268 D1488

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STMicroelectronics STL24N60DM2

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24N60 Datasheets (4)

24N60 Datasheets Context Search

24N60

IXGH24N60B

24N60

IXGH24N60CD1

c2548

C4080

Untitled

W2515

G20N60

24N60CD1

Untitled

Untitled

Untitled

Untitled

931 diode smd

6008B

B1116

24N50

Untitled

Untitled

smd diode JC 0p

XSH24N60

Untitled

D1488