24E1A Search Results

Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)

2SC3113

Contextual Info: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package

2SC2458 GR

Abstract: 2SC2458 2SA1048
Contextual Info: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2458

Abstract: 2SC2458 GR 2sc2458l 2SA1048
Contextual Info: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。

2SC5765

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1049

Abstract: 2SC2459
Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

RN1201

Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

2SA1048

Abstract: 2SC2458 2sa1048 transistor
Contextual Info: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SA1049

Abstract: 2SC2459 transistor 2sc2459
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC5720

Contextual Info: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)

RN1210

Abstract: RN2210 RN2211
Contextual Info: RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2210,RN2211 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

RN1202

Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design

Contextual Info: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V

Contextual Info: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.

transistor 2sc2459

Abstract: 2SC2459
Contextual Info: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)

0723

Abstract: l1998
Contextual Info: T O S H IB A RN1210,RN1211 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design

RN2223

Abstract: ko iq
Contextual Info: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)

Contextual Info: TO SHIBA RN1207-RN1209 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1207, RN1208, RN1209 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design

1223 equivalent

Contextual Info: RN1221,1222,1223 RN1224,1225 RN1226,1227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mni AND DRIVER CIRCUIT APPLICATIONS. 4.2MAX. . High Current Type Ic(MAX =800mA) . With Built-in Baias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts Manufacturing Process

Contextual Info: TO SHIBA RN2207-RN2209 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2207, RN2208, RN2209 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design

mcr 5152

Abstract: ntc 5D-7 PAL 007 B 5659065-3B HOORAY T5.5 murata 86-103-3 D86-0-D 9F36 H1431
Contextual Info: Bt860/861 Distinguishing Features • • Multiport YCrCb to NTSC / PAL / SECAM Digital Video Encoder • The Bt860/861 is a multiport digital video encoder with pixel synchronization and per-pixel blending capabilities. The three 8-bit YCrCb data ports allow for a variety of

Contextual Info: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors