24MAR03 Search Results

V7-6B13E9-122

Contextual Info: FO-50 360-L 6 CW-C5979 1 1 1 8 9 1 1 io REV DOCUMENT 1 JOB52445 TSM 20NOVOI 2 207743 TSM 24MAR03 CHANGED CHECK BY SAV .330 . I 60 J_L 40 G o JL .17 S 3X . 2 5 0d= . 0 0 3 -CORROSION RESI STANT S T E E L ACTUATOR NOTES 1 - SWI TCH M A T E R I A L S W I L L W I T H S T A N D I 50° C

CW-C5978

Abstract: C5978 V7-6B13D8-122
Contextual Info: FO-50 3 6 0 - L 1 2 1 3 1 4 1 1 1 5 1 6 1 1 9 1 8 REV CW -C5978 1 2 1 DOCUMENT JOB52425 207743 io CHANGED TSM TSM CHECK BY 9 NOVO 1 24MAR03 1 SAV .385 r G 25 I . I7 . 40 _L z 7 X 3X CORROSION R E S I S T A N T S T E E L ACTUATOR . I 8 7 ± . 003 NOT ES 1 - SWI TCH M A T E R I A L S W I L L WI T HS T A N D I 5 0 ° C

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 _ i_ RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS LTR D D DATE OWN APVD 24MAR03 JR PD DESCRIPTION REV PER 0 G 3 A -0 1 8 5 - 0 3 1 CONTINUOUS STRIP ON REELS

hall sensor 41F

Abstract: 41F hall SS41F honeywell 41f Hall 41f circuit diagram for Basic Stamp 2 55112-A FO-55112-A
Contextual Info: jy FO-55112-A REV C HONEYWELL P A R T NUMBER DOCUMENT 0052830 C H A N G E D BY C H EC K KNR 0 3 JU N 0 9 R S A 161 ± . 005 D D 2X 5° .0 5 9 ± .0 1^ ± MATTE F I N I S H .005 AFTER RADIUS PARTING L I N E -•4 \* — .018 A 4X SHARP CORNER 2X R . 0 0 5 EJECTOR PIN LOCATION

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 7, 62 For cont oct s on ^ s t r i p only rn ^ i ^ 1 ’ 60 Number of con tac t s / r e e 1 10000 ar M y . STAMPED MALE CRIMP C0NTACTS Wire gauge PL SL PL 3 AWG AWG 2A-28 PL 2 0967 000 7245 0967 000 7247 0967 000 7248

SUM23N15-73

Contextual Info: SUM23N15-73 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 150 ID (A) 0.073 @ VGS = 10 V 23 0.077 @ VGS = 6 V 22.5 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package

PD107

Abstract: SUM40N10-30
Contextual Info: SUM40N10-30 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 100 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V

114-13103

Abstract: 108-2161
Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 4X BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC RESERVED. DIST R E V I S I O N S 00 ES LTR DESCRIPTION DATE DWN APVD R E L E A S E D P E R E C OS I 3 - 0 0 0 I - 0 4

2k resistor 2 watt

Abstract: D 5464 500R
Contextual Info: SMN Vishay Foil Resistors Bulk Metal Foil Technology 4 Resistor Precision Surface Mount Network Dual-In-Line Molded Package 50 MIL Pitch FEATURES • Low Temperature Coefficient of Resistance: Absolute: ± 5ppm/°C Tracking: ± 1ppm/°C • Large variety of resistance ratios

A2825

Abstract: SUM23N15-73 EAR31 sum23n15
Contextual Info: SUM23N15-73 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 150 ID (A) 0.073 @ VGS = 10 V 23 0.077 @ VGS = 6 V 22.5 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package

SI7462DP

Contextual Info: Si7462DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized For Fast Switching PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.130 @ VGS = 10 V

Contextual Info: SUM23N15-73 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 150 ID (A) 0.073 @ VGS = 10 V 23 0.077 @ VGS = 6 V 22.5 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. BY - 57.25 T11 TYP D -C- T10 TYP 8X 14 0.1 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD D1 REVISED PER ECO-11-005027 18MAR2011 RK HMR

TLWB7600

Abstract: TLWBG7600 TLWO7600 TLWR7600 TLWTG7600 TLWW7600 TLWY7600
Contextual Info: TLW.76. VISHAY Vishay Semiconductors TELUX LED \ Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP and

T255

Contextual Info: THIS DRAWING IS UNPUBLISHED. H COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF ALL RIGHTS RESERVED. R E V IS IO N S 50 LTR K D C O N T IN U O U S 1 0 .0 0 2 0 3 2 0 .0 0 2 5 4 CR IM P <+> ON [.0 0 0 0 8 0 ] [.0 0 0 1 0 0 ]

SUD23N06-31L

Contextual Info: SUD23N06-31L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.031 @ VGS = 10 V 23 APPLICATIONS 0.045 @ VGS = 4.5 V 19.5 VDS (V) rDS(on) (W) 60 ID D Automotive

SUM40N15-38

Contextual Info: SUM40N15-38 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.038 @ VGS = 10 V 40 0.042 @ VGS = 6 V 38 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package

Contextual Info: Si4423DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.0075 @ VGS = - 4.5 V - 14 0.009 @ VGS = - 2.5 V - 13 0.0115 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

SUM40N02-12P

Contextual Info: SUM40N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 20 ID D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for High-Side Synchronous Rectifier (A)a 0.012 @ VGS = 10 V

SUM40N10-30

Contextual Info: SUM40N10-30 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 100 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V

Si4423DY

Contextual Info: Si4423DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.0075 @ VGS = - 4.5 V - 14 0.009 @ VGS = - 2.5 V - 13 0.0115 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

2k resistor 2 watt

Abstract: 200-R 104M 500R
Contextual Info: DSM Vishay Foil Resistors Bulk Metal Foil Technology High Precision, Surface Mount Divider FEATURES • Low temperature coefficient of resistance: Absolute: ± 5ppm/°C Tracking: ± 1ppm/°C • Excellent Ratio Stability: 0.01% - 0.05 watts at 70°C, 2000 hours

SUP40N10-30

Contextual Info: SUP40N10-30 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V 37.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive

Contextual Info: FO-50360-L 1 2 3 4 5 6 7 8 CW-C5978 9 REV DOCUMENT 3 0059070 10 CHANGED BY KNR CHECK 23NOV09 CMH H H .385 .125 G .40 G .17 3X .187 #.003 CORROSION RESISTANT STEEL ACTUATOR NOTES 1 - SWITCH MATERIALS WILL WITHSTAND 150 C $ 2 - CAUTION: OVERTRAVEL FORCE ON LEVER MUST NOT RESULT IN AN OVERTRAVEL