2404 TRANSISTOR Search Results

NJM2259

Abstract: Dual RF transistor NJM2204B NJM2225A NJM2270 NJM2610 NJM3201 NJM387 NJM2104
Contextual Info: DISCONTINUE PRODUCTS • DISCONTINUE PRODUCTS Type No. NJM387 NJM 2404 NJM 2610 NJM2204B FUNCTION Dual Low Noise OP-Amp 3/4 W ired Remote Controller Bi-Directional M otor Driver Log Amplifier NJM 22I9 NJM2225A NJM2259 NJM 2270 NJM3201 NJM 2104 NJM 2620 NJM 2250

T17 TRANSISTOR

Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
Contextual Info: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design

2404 Transistor

Abstract: RN2401 RN2402 RN1401 RN2403 RN2404 RN2405 RN2406 transistor 009 transistor 2404
Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplified circuit design

RN1401

Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406
Contextual Info: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors

RN1401

Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406
Contextual Info: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors

RN1401

Abstract: RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 2404
Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design

RN2402

Abstract: RN1401 RN2401 RN2403 RN2404 RN2405 RN2406
Contextual Info: RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401,RN2402,RN2403 RN2404,RN2405,RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplified circuit design

RN2401

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design

RN2404

Abstract: RN1401 RN2401 RN2402 RN2403 RN2405 RN2406
Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2401, RN2402, RN2403, RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design

Contextual Info: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors

P55C

Abstract: SPX1580 SPX1581 SPX1582 SPX1583 2404
Contextual Info: SPX1583 1.5A Ultra Low Dropout Voltage Regulator Fast Response, Adjustable & Fixed FEATURES APPLICATIONS • Low Dropout Voltage 500mV at 1.5A Full Load Current • Adjustable Output Down to 1.2V from ATX Power Supply • Fixed Output Voltages of 3.3V, 2.8V, 2.5V, and 1.5V

K247

Abstract: k143 K144 3SK280 2SC5016 Block DIAGRAM LED TV k144 transistor M 5265 P 2SC3312 K219
Contextual Info: Application Block Diagrams • V id e o A pplications 4; Color TV NTSC — (1) A N 5265 Note) T he tran sistors and diodes listed below can be used fo r the perip h­ eral circuits in this block diagram . • G eneral purpose transistor: 2SA1310. 2S C 3312 (R efer to

Contextual Info: HARRIS SEMICON» SECTOR SbE I> WM M3DEE71 GOMOfl2i4 7T1 H H A S D45C Series File Number 2352 7 =-3 3 - / 7 Silicon P-N-P Transistors Complementary to the D44C Series General-Purpose Types for Medium -Power Switching and Am plifier Applications Features: • Very low collector saturation voltago 1-0.5V typ. @ -3.0A I q ]

nte 2343

Contextual Info: SILICON DARLINGTON TRANSISTORS IN ORDER OF NTE PART NUMBER NPN PNP Circuit Outline Description Letter Maximum Breakdown Voltage NTE Type Number Case Style Diag. Number Maximum Continuous Collector Current (Amps) Collector to Base (Volts) Collector to Emitter

motorola rf Power Transistor mrf317

Abstract: hfc4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz

2sd 4515

Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Contextual Info: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini

Contextual Info: D45C Series File N um ber 2352 Silicon P-N-P Transistors Complementary to the D44C Series G en eral-P u rp o se T yp es fo r M e d iu m -P o w e r S w itchin g and A m p lifie r A p p licatio n s F e atu re s: • Very lo w c o lle c to r s a tu ra tio n voltage

MRF581

Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz

Contextual Info: Sym bol P B F 2 5 9 .S U n it C o lle c to r-E m itte r V o itage R ating VC EO 300 Vdc C o lle c to r-B a s e V o ltage VCBO 300 Vdc E m itte r-B a s e V o ltage VEBO 50 Vdc C o lle c to r C u rre n t - C o n tin u o u s >C 500 m Adc Total Device D is s ip a tio n c? T /\ = ZB^C

pt100 datasheet

Abstract: transistor wachendorff 2AC50
Contextual Info: Temperaturanzeigen Industrie - Temperaturanzeige PAX T nicht möglich, wenn die Bedingung nicht erfüllt ist und der Ausgang normalerweise schaltet. Sobald die Bedingung das erste Mal wieder erfüllt ist, wirkt eine Rückstellung. StandbyJa/nein. Bei Ja wird der Alarm erst aktiv, wenn der

ufnf230

Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
Contextual Info: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.