24 V PNP TRANSISTOR ARRAY Search Results

Contextual Info: LM3046M Transistors Independent Transistor Array Military/High-RelN Number of Devices1 Type NPN/PNP V(BR)CEO (V)24 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)750m Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: LM3046N Transistors Independent Transistor Array Military/High-RelN Number of Devices1 Type NPN/PNP V(BR)CEO (V)24 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)750m Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

ca3096

Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Contextual Info: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

ca3096

Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
Contextual Info: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

40841

Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Contextual Info: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

40841

Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
Contextual Info: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

T 402 transistor

Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP

40841 MOSFET

Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

CA3096

Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
Contextual Info: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

CA3096

Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
Contextual Info: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA201/202 UHF Semicustom Linear Arrays Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA201/202 UHF Semicustom Linear Arrays are

harris 3096

Contextual Info: H A R R IS SEfllCOND SECTOR HARRIS 40E D B 4 3 D 2 2 7 1 0D3S30M T I IHAS GA3096, CA 3096A CA3096C N -P -N /P -N -P Transistor Arrays August 1991 CA3096A, CA309G, CA3096C Essentia/ Differences Applications • Five-Independent Transistors ►Three N-P-N and

ALA201

Abstract: 6x transistor ALY-2 ALA202 NU321A01 NU341A01 NU3A2A01 NU9A3A01 PU322A01 Nu12
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA201/202 UHF Semicustom Linear Arrays Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA201/202 UHF Semicustom Linear Arrays are

transistor 669

Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
Contextual Info: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:

CA3096

Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

ca3096

Abstract: 40250 Transistor thyristor firing circuits 3096a Transistor Arrays NPN General Purpose Transistor CA3096AE 15 A PNP TRANSISTOR
Contextual Info: CA3096, CA3096A, CA3096C fS î h a r r i s o u SemicoHou »VOR NPN/PNP Transistor Arrays August 1996 Applications Description • Five-independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

4221 transistor

Abstract: qp-8 AC 128 pnp transistor
Contextual Info: G S-THOMSON 7 f l c T ~ | 7 ^ a cì 5 B 7 000b711 LINEAR COMPONENT ARRAYS A unique feature o f the POLY-USE A and G array is the tw o level metalization which simplifies routing, increases the percent utilization o f the components on the array and provides improved

str 40200

Contextual Info: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 | CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:

op amp 741 model PSpice

Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
Contextual Info: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­

chip die npn transistor

Contextual Info: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance

3400 8k transistor

Contextual Info: GEC PLESSEY SEMICONDS 31E D 37bflSS2 OOllbfli *1 • P 1L E 8 8 E Y March 1990 SEMICONDUCTORS■ MF SERIES MACROCHIP HIGH FREQUENCY BIPOLAR ANALOG ARRAYS DESCRIPTION The M F Series is a family of 5 arrays designed for use in high speed analog applications.

Contextual Info: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)