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    TDK Electronics B32923C3224K189

    CAP FILM 0.22UF 10% 630VDC RAD
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    DigiKey B32923C3224K189 Cut Tape 16,698 1
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    B32923C3224K189 Reel 15,400 700
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    TDK Electronics B32923C3225M000

    CAP FILM 2.2UF 20% 630VDC RADIAL
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    DigiKey B32923C3225M000 Bulk 9,915 1
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    Bristol Electronics B32923C3225M000 37,755
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    TME B32923C3225M000 219 1
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    TDK Electronics B32923C3224M000

    CAP FILM 0.22UF 20% 630VDC RAD
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    DigiKey B32923C3224M000 Bulk 6,153 1
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    TME B32923C3224M000 1
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    TDK Electronics B32923C3225K000

    CAP FILM 2.2UF 10% 630VDC RADIAL
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    DigiKey B32923C3225K000 Bulk 2,761 1
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    Newark B32923C3225K000 Bulk 1,411 1
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    TME B32923C3225K000 247 1
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    TDK Electronics B32923C3224K289

    CAP FILM 0.22UF 10% 630VDC RAD
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    DigiKey B32923C3224K289 Cut Tape 2,570 1
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    B32923C3224K289 Ammo Pack 2,040 680
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    TME B32923C3224K289 2,720
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    23C32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is


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    PDF PD23C32040AL, 23C32080AL 32M-BIT 16-BIT PD23C32040AL PD23C32080AL 48-pin 44-pin

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The μ23C32340 and μ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is


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    PDF PD23C32340, 23C32380 32M-BIT 16-BIT PD23C32340 PD23C32380 48-pin

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit 23C32040AL,23C32080AL 32M ビット マスク・プログラマブル ROM 4M ワードx8 ビット(バイト・モード)/2M ワード×16 ビット(ワード・モード) ページ・アクセス・モード


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    PDF PD23C32040AL 23C32080AL PD23C32040AL, PD23C32080AL PD23C32080AL TSOP44 PD23C32040AL

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is


    Original
    PDF PD23C32040AL, 23C32080AL 32M-BIT 16-BIT PD23C32040AL PD23C32080AL 48-pin PD23C32040AL)

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32340 and µ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is


    Original
    PDF PD23C32340, 23C32380 32M-BIT 16-BIT PD23C32340 PD23C32380 48-pin

    48-PIN

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is


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    PDF PD23C32040AL, 23C32080AL 32M-BIT 16-BIT PD23C32040AL PD23C32080AL 48-pin 44-pin

    23C32

    Abstract: 48-PIN marking a20
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32343, 23C32383 32M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT PAGE ACCESS MODE Description The µ23C32343 and µ23C32383 are 33,554,432 bits mask-programmable ROM. The word organization is 2,097,152 words by 16 bits.


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    PDF PD23C32343, 23C32383 32M-BIT 16-BIT PD23C32343 PD23C32383 48-pin 23C32 marking a20

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The μ23C32040AL and μ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is


    Original
    PDF PD23C32040AL, 23C32080AL 32M-BIT 16-BIT PD23C32040AL PD23C32080AL 48-pin 44-pin

    48-PIN

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32340 and µ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is


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    PDF PD23C32340, 23C32380 32M-BIT 16-BIT PD23C32340 PD23C32380 48-pin

    Untitled

    Abstract: No abstract text available
    Text: TMS45160, TMS45160P 262ā144ĆWORD BY 16ĆBIT HIGHĆSPEED DYNAMIC RANDOMĆACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 D D D DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent


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    PDF TMS45160, TMS45160P SMHS160D TMS45160/Ps 45160/P-60 45160/P-70 45160/P-80

    TMS416169

    Abstract: TMS418169
    Text: TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C MAY1995 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 1 048 576 Words by 16 Bits Single 5-V Power Supply Performance Ranges: ACCESS ACCESS ACCESS READ OR


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    PDF TMS416169, TMS418169 1048576-WORD 16-BIT SMKS886C MAY1995 41x169/P-60 41x169/P-70 41x169/P-80 024-Cycle TMS416169 TMS418169

    01C09

    Abstract: No abstract text available
    Text: GoldStar 23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex­


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    PDF GM23C32000FW 16BIT 23C32000FW 44-SOP, 100pF* 402fl757 00D4D4f 01C09

    23C32000a

    Abstract: ICX 639 23c3200
    Text: 23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of


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    PDF GM23C32000A 120/150ns. 23C32000A GM23C32000A 120/150ns ICX 639 23c3200

    23c3200

    Abstract: No abstract text available
    Text: PRELIMINARY KM 23C3200C^^ CMOS MASK ROM 32M-Bit 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 X 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V


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    PDF 23C3200C^ 32M-Bit 150ns 100/iA 44-pin, KM23C32000G KM23C32000G) 23c3200

    2332 eprom

    Abstract: 23C32 2332 rom 2532EPROM
    Text: SOLID STATE ^ SCIENTIFIC 23C32 883/23C32 4096 x 8 Static CMOS ROM Features • ■ ■ ■ Pin Configuration Fast Access Time Selection: 150ns/200ns/300ns Low Operating Current: 10mA Max. Low Standby Current: 50 nA Max. Commercial, Industrial and Military Temperature


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    PDF SCM23C32 883/23C32 150ns/200ns/300ns 883/23C32M SCM23C32R 23C32 2332 eprom 2332 rom 2532EPROM

    4Kx8 rom ttl

    Abstract: 2532 eprom 23C32 2732 eprom eprom 2532 2732 rom cmos 2532EPROM 2732 cmos eprom 4Kx8 rom 24 pin
    Text: SILICON INTEGRATE» S'ÌE D & 2 S 3 & & C\ QQ00004 1 T -' l/-Ìp "/3'/5" ft CMOS M A S K RO M SIS 23C32/23C32A 4Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access time 150/200ns •Single + 5V power supply •Pin Compatible with 2532 EPROM •TTL Compatible Inputs and Outputs


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    PDF QQ00004 23C32/23C32A 150/200ns 23C32A 23C32 23C32 23C33A 23C33 23C33 23C33A 4Kx8 rom ttl 2532 eprom 2732 eprom eprom 2532 2732 rom cmos 2532EPROM 2732 cmos eprom 4Kx8 rom 24 pin

    Untitled

    Abstract: No abstract text available
    Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC


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    PDF SMJ416160, SMJ418160 1048576-WORD 16-BIT SGMS720A 41x160-60 41x160-70 41x160-80

    Untitled

    Abstract: No abstract text available
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.


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    PDF TMS418160A 16-BIT TMS418160As 1024-Cycle R-PDSO-J42) 18160A

    Untitled

    Abstract: No abstract text available
    Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70


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    PDF TMS416160, TMS416160P 576-WORD 16-BIT SMKS660-DECEMBER 416160/P-60 416160/P-70 416160/P-80

    Untitled

    Abstract: No abstract text available
    Text: HUALON MICROELECTRONICS E4E D MSTflOMl 000004b □ • 23C32 4K x 8 MASK ROM : !: a Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2532 EPROM. Two programmable chip selects for output control,


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    PDF 000004b HM23C32 200/300ns 23C32

    TMS 1070 HL

    Abstract: No abstract text available
    Text: T M S 4 1 6 1 6 9 A, T M S 4 1 8 1 6 9 A T M S 4 2 6 1 6 9 A , TMS 4 26 1 69 A P, T M S 4 2 8 1 6 9 A , T M S 4 2 8 1 6 9 A P 1 0 4 8 5 7 6 - W O R D BY 1 6- BI T E X T E N D E D DATA O U T H I G H - S P E E D D R A M S S M K S 892-A U G U S T 1996 TIME TIME


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    PDF

    S891C

    Abstract: SS828
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.


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    PDF TMS418160A 16-BIT S891C 1996-R TMS418160As 1024-Cycle 18160A-50 18160A-60 4181B0A-70 SS828

    GM23C32200AFW

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The 23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


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    PDF GM23C32200AFW 120/150ns. 44SOP, 015/A D0Q4770

    Untitled

    Abstract: No abstract text available
    Text: 23C3204 32M-BÎT MASK ROM B-BfT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 4M x 8 (byte mode only) • Fast access time - Random access: 100ns (max.) • Current - Operating :60mA - Standby:100uA • Supply voltage - 5V±10% • Package -4 2 pin DIP (600mil)


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    PDF MX23C3204 32M-B 100ns 100uA 600mil) MX23C3204PC-10 MX23C3204PC-12 MX23C3204PC-15 100ns 120ns