23JAN06 Search Results

CTLB042234-013

Contextual Info: 501-616 Qualification Test Report 23Jan06 Rev A MICTOR SB True SMT Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on Tyco Electronics MICTOR SB connectors to determine their conformance to the requirements of Product Specification 108-2139, Revision A.

EIA-638

Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 Mictor EIA-364-18
Contextual Info: 108-2139 Product Specification 23Jan06 Rev A MICTOR SB True SMT Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics True Surface Mount (SMT) Style Single Beam Matched Impedance (MICTOR SB) Connector for mezzanine

Contextual Info: 3 6 TH IS O DRAWING COPYRIGHT IS UNP UBLISHED. 19 RELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. A L L RI G HT S LOC DIST REVISIONS RESERVED. LTR D E S C R I P T IO N FF , PLUG #1 ASSEMBLY INFINIBAND [6 40] THRU -6 DWN APVD 23JAN06 TS DL FF PLUG PIN

Si5908DC

Contextual Info: SPICE Device Model Si5908DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5905DC

Contextual Info: SPICE Device Model Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4822DY

Contextual Info: SPICE Device Model Si4822DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

3771

Abstract: AN609 Si4963DY
Contextual Info: Si4963DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4992EY

Contextual Info: SPICE Device Model Si4992EY Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4982DY

Contextual Info: SPICE Device Model Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4420BDY

Contextual Info: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5904DC

Contextual Info: SPICE Device Model Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5903DC

Contextual Info: SPICE Device Model Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4420BDY

Abstract: V3231
Contextual Info: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4484EY

Contextual Info: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5904DC

Contextual Info: SPICE Device Model Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SL2150D Cable Tuner Front End LNA with AGC Data Sheet Features September 2005 • Single chip dual output LNA • Wide dynamic range on both channels • Independent AGC facility incorporated into all channel paths • Independent disable facility incorporated into all

BZG05C9V1

Abstract: smd zener diode code 24 zener 7.5 B 47 35-1000 39 do-214ac BZG05C3V3 BZG05C3V6 BZG05C3V9 BZG05C4V3 BZG05C4V7
Contextual Info: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • • Glass passivated junction High reliability e3 Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable Lead Pb -free component Component in accordance to RoHS 2002/95/EC

VSR20003R2

Abstract: VSR2000-3R2 finisar 300-pin transponder OC-768 STM-256 300-pin BBTR4005
Contextual Info: Finisar BBTR4005 PRODUCT BRIEF 40Gb/s SHORT REACH TRANSPONDER PRODUCT DESCRIPTION FEATURES The Finisar 40Gb/s Kodiak transponder provides a complete electro-optical interface for the newest generation of high speed optical transport. Advanced mixed signal chip-sets provide

Si5513DC

Contextual Info: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6415DQ

Contextual Info: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5975DC

Contextual Info: SPICE Device Model Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4026 datasheet

Abstract: A 2231 AN609 Si4946BEY 36892 1.0895 3-3-508
Contextual Info: Si4946BEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7120DN

Contextual Info: SPICE Device Model Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range