2383 TRANSISTOR Search Results

Contextual Info: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

QS 100 NPN Transistor

Contextual Info: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

MAX9320B

Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
Contextual Info: 19-2383; Rev 0; 4/02 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current

Contextual Info: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current

MAX9320B

Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
Contextual Info: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current

2SC2383

Abstract: 2SC2383 equivalent
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 2383 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-01 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2

kta1013

Abstract: TIC 160 VCEO160V
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.

tv vertical ic circuit list

Abstract: transistor marking code y3 transistor MARKING CODE tv 2383 transistor
Contextual Info: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

"High Speed Switch"

Abstract: TE 2383
Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High

“RCA H 541”

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE IN TER SIL C D 54/74FC T540, CD54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting

74fct541a

Abstract: 74fct541 T541 CD54FCT540 RCA H 541 “RCA H 541”
Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTER SIL C D 54/74FC T540, C D 54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting

D44Q5

Abstract: D44Q3
Contextual Info: File Number D44Q Series 2347 Silicon N-P-N Transistors For S w itchin g and Linear A p p licatio n s Features: • Very low collector saturation voltage ■ Excellent linearity ■ Fast sw itching TERMINAL DESIGNATIONS The D44Q-series n-p-n power transistors feature low collec­

NTE2382

Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL

2sk type

Abstract: 2SK+series
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)

bd799

Abstract: bd800
Contextual Info: Power Transistors File Number 1242 HARR IS S E M I C O N D S E CT OR BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 27E ]> • 43GS271 Epitaxial-Base, Silicon N -P-N and P-N-P VERSAWATT Transistors QGeamT-? ■ HA S T - 3 3 ~ \ TERMINAL DESIGNATIONS

motorola 2383 pnp

Abstract: MMBT6517LT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor M M BT6517LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 350 Vdc C ollector-B ase Voltage v CBO 350 Vdc Emitter- B ase Voltage

Contextual Info: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

FJC2383

Contextual Info: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

2SC2398

Abstract: 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

vno300m

Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

UFNF123

Abstract: UFNF120
Contextual Info: U NITRO DE CORP 9347963 ^2 U N ITRO DE DE CORP 0D1DÖS7 92D 10827 POWER MOSFET TRANSISTORS ufnfi2o 100 Volt, 0.30 Ohm N-Channel UFNF122 UFNF123 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

MRF557

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W

ufnf122

Abstract: ufnf120 UFNF123
Contextual Info: POWER MOSFET TRANSISTORS y 100 UFNF122 UFNF123 Volt, 0 .3 0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power MOSFET design u tilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.

Contextual Info: MAXIM UM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO -3 0 0 Vdc C o lle c to r-B a s e V o lta g e v CBO -3 0 0 V dc E m iite r-B a s e V o lta g e Vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s 'C -5 0 0