Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    230V NPN 1A Search Results

    230V NPN 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    230V NPN 1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC6141

    Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
    Text: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.


    Original     		2SA2221/2SC6141 ENA1288 AF100W AF100W 2SA2221 A1288-4/4 2SC6141 a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2648 Silicon NPN Transistor General Purpose Amp Features: D High Transition Frequency Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V


    Original     		NTE2648 100mA 500mA, 500mA PDF

    NTE2647

    Abstract: NTE2648 NTE2747 NTE2748 230V npn 1A 20W
    Text: NTE2647 PNP & NTE2648 (NPN) Silicon Complementary Transistors General Purpose Amp Features: D High Transition Frequency Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V


    Original     		NTE2647 NTE2648 100mA 500mA, 500mA NTE2747 NTE2748 NTE2647 NTE2648 NTE2747 NTE2748 230V npn 1A 20W PDF

    NPN Transistor 2sc5242

    Abstract: transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION •High Collector Breakdown Voltage: V BR CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications


    Original     		2SC5242 2SA1962 NPN Transistor 2sc5242 transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962 PDF

    power amplifier 2sc5200 2sa1943 TRANSISTOR

    Abstract: transistor 2sc5200 2sC5200, 2SA1943 transistor npn 100w amplifier 2sc5200 transistor 2sc5200 amplifier circuit 2SC5200 2sa1943 transistor 2SC5200 2sc5200 amplifier DATA SHEET TRANSISTOR 2SC5200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS


    Original     		2SC5200 2SA1943 power amplifier 2sc5200 2sa1943 TRANSISTOR transistor 2sc5200 2sC5200, 2SA1943 transistor npn 100w amplifier 2sc5200 transistor 2sc5200 amplifier circuit 2SC5200 2sa1943 transistor 2SC5200 2sc5200 amplifier DATA SHEET TRANSISTOR 2SC5200 PDF

    2SC5242

    Abstract: 2SA1962 230V npn 1A
    Text: SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity


    Original     		2SC5242 2SA1962 2SC5242 2SA1962 230V npn 1A PDF

    2SC5669

    Abstract: AF100W 2SA20 2SA2031 D1503 2SA203
    Text: 2SA2031 / 2SC5669 Ordering number : ENN6586A 2SA2031 / 2SC5669 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.


    Original     		2SA2031 2SC5669 ENN6586A AF100W 2SA2031 2SC5669 AF100W 2SA20 D1503 2SA203 PDF

    schematic diagram AUDIO power amplifier

    Abstract: 2STC5200
    Text: 2STC5200 High Power NPN epitaxial planar bipolar transistor PRELIMINARY DATA Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT= 30MHz ■ In compliance with the 2002/93/EC European directive


    Original     		2STC5200 2STA1943 30MHz 2002/93/EC O-264 2STC5200 O-264 schematic diagram AUDIO power amplifier PDF

    2SA2031

    Abstract: 2SC5669 65863 AF100W IC3100
    Text: Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features • • • Package Dimensions Large current capacitance. Wide ASO and high durability against breakdown.


    Original     		ENN6586 2SA2031 2SC5669 AF100W 2SC5669] 2SA2031 2SC5669 65863 IC3100 PDF

    NTE2654

    Abstract: No abstract text available
    Text: NTE2654 Silicon NPN Transistor Audio Power Amp Output Features: D High Collector Breakdown Voltage D Suitable for use in 80W High Fidelity Audio Amplifier Output Stage Absolute Maximum Ratings: TC = +25°C unles otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V


    Original     		NTE2654 NTE2654 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2STC5242 High power NPN epitaxial planar bipolar transistor Preliminary Data Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT= 30MHz Application ■ 3 2 1 Audio power amplifier TO-3P Description


    Original     		2STC5242 2STA1962 30MHz 2STC5242 PDF

    KTC5242A

    Abstract: KTA1962A
    Text: SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.


    Original     		KTC5242A KTA1962A. KTC5242A KTA1962A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E ・High Collector Voltage : VCEO=230V Min. C ・Complementary to KTA1962. J H ・Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.


    Original     		KTC5242 KTA1962. PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC5242 KSA1962 PDF

    KSC5242

    Abstract: KSA1962
    Text: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC5242 KSA1962 KSC5242 KSA1962 PDF

    KSA1962

    Abstract: KSC5242
    Text: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=10A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC5242 KSA1962 KSA1962 KSC5242 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 1 1.Base TO-3P 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC5242 KSA1962 PDF

    KTA1962

    Abstract: KTC5242 CE1210
    Text: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.


    Original     		KTC5242 KTA1962. KTA1962 KTC5242 CE1210 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=10A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC5242 KSA1962 KSC5242 PDF

    KTA1962

    Abstract: KTC5242
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC5242 TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Breakdown Voltage : VcEO=230V Min. • Complementary to KTA1962. • Recommended for 80W High Fidelity Audio Frequency


    OCR Scan     		KTC5242 KTA1962. KTA1962 KTC5242 PDF

    NPN Transistor 2sc5242

    Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
    Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5242 2SA1962 NPN Transistor 2sc5242 transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 tr 2sA1987 PDF

    transistor 2SC5359

    Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359 PDF

    2SC5242

    Abstract: No abstract text available
    Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.


    OCR Scan     		2SC5242 2SA1962 2-16C1A 2SC5242 PDF