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    2302 TRANSISTOR Search Results

    2302 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2302 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A654

    Abstract: A1328
    Text: Thin-Film Cascadable Amplifier 1700 to 2300 MHz Technical Data UTO/UTC 2302 Series Features Description Pin Configuration • Frequency Range: 1700 to 2300 MHz The 2302 Series is a thin-film bipolar RF amplifier that incorporates resistive feedback and active


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    CASE OUTLINE 55 BT- Style 1

    Abstract: 2 watt rf transistor 2302 transistor
    Text: 2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


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    HDSP2450

    Abstract: ic 7490 which divide by 2 HDSP-2010 HDSP-2000 74151 Multiplexer CI 74LS00 6810 RAM Multiplexer IC 74151 HDSP-2300 motorola 6810
    Text: Four Character 5.0 mm 0.20 inch 5 x 7 Alphanumeric Displays Technical Data HDSP-2301 HDSP-2302 HDSP-2303 Features Applications • Integrated Shift Registers with Constant Current Drivers • Compact Ceramic Package • Wide Viewing Angle • End Stackable Four


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    HDSP-2301 HDSP-2302 HDSP-2303 HDSP-2301/2303 HDSP-2301/-2302/-2303 HDSP2450 ic 7490 which divide by 2 HDSP-2010 HDSP-2000 74151 Multiplexer CI 74LS00 6810 RAM Multiplexer IC 74151 HDSP-2300 motorola 6810 PDF

    SFH 2302

    Abstract: photodiode dvd cd Q65110A6343 GEOY6653 OHLY0598
    Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer


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    400nm 1050nm SFH 2302 photodiode dvd cd Q65110A6343 GEOY6653 OHLY0598 PDF

    SFH 2302

    Abstract: No abstract text available
    Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer


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    400nm 1050nm SFH 2302 PDF

    ASI10534

    Abstract: ASI2302
    Text: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 2 W / 2300 MHz


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    ASI2302 ASI10534 ASI10534 ASI2302 PDF

    SFH 2302

    Abstract: No abstract text available
    Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer


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    400nm 1050nm SFH 2302 PDF

    bty79 scr

    Abstract: SCR c106 PIN CONFIGURATION thyristor bt106 BT106 RS3423 c106 scr 2n4444 ARE 3423 BTX18-400 50026
    Text: Issued March 1997 232-2302 Data Pack J Overvoltage protector 3423 Data Sheet RS stock number 307-890 This overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR The


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    ASI2302

    Abstract: ASI10534
    Text: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz


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    ASI2302 ASI2302 ASI10534 PDF

    ASI10534

    Abstract: ASI2302
    Text: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 2300 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz


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    ASI2302 ASI10534 ASI10534 ASI2302 PDF

    ALD2302

    Abstract: ALD2302A ALD2302ADA ALD2302ASA ALD2302DA ALD4302 LM193 mosfet protection circuit diagram
    Text: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of


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    ALD2302A/ALD2302 ALD2302A/ALD2302 180ns; ALD2302 ALD2302A ALD2302ADA ALD2302ASA ALD2302DA ALD4302 LM193 mosfet protection circuit diagram PDF

    MOSFET 2302

    Abstract: ALD2302 ALD2302A ALD4302 LM193
    Text: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of


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    ALD2302A/ALD2302 ALD2302A/ALD2302 180ns; MOSFET 2302 ALD2302 ALD2302A ALD4302 LM193 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of


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    ALD2302A/ALD2302 ALD2302A/ALD2302 180ns; PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS


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    ALD2302A/ALD2302 ALD2302A/ALD2302 180ns; LM193 ALD2302/ALD2302A PDF

    9494 transistor

    Abstract: No abstract text available
    Text: W h a t HEW LETT mÜKM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 1700 to 2300 MHz Technical Data UTO/UTC 2302 S eries F eatures D escription Pin C onfiguration • F requency Range: 1700 to 2300 MHz The 2302 Series is a thin-film bipolar RF amplifier th at incorpo­


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    AVANTEK transistor

    Abstract: Avantek am-2302 UTC 1316 amplifier M/Avantek am-2302
    Text: 0AVANTEK UTO/UTC 2302 Series Thin-Film Cascadable Amplifier 1700 to 2300 MHz FEATURES APPLICATIONS • Frequency Range: 1700 to 2300 MHz • Medium Gain: 10.5 dB Typ • Low VSWR • Temperature Compensated • IF/RF Amplification • Telemetry • Military Communications


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    BU2305

    Abstract: BU2305F bu2302
    Text: Standard iCs CR timer BU2302/BU2302F/BU2305/BU2305F The B U 2302/F and B U 2305/F are general-purpose ICs used in timers. The tim er off tim e is based on the oscillation frequency that is determ ined by the external CR connected to the internal oscillator circuit.


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    BU2302/BU2302F/BU2305/BU2305F BU2302/F BU2305/F 2305/F U2302/B U2302F/B U2305/BU2305F BU2305 BU2305F bu2302 PDF

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


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    44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815 PDF

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


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    302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811 PDF

    C22B

    Abstract: BLW27 transistors for oscillators ic 9033 ICB-287 CB-3071 CB-295 TH9023 Cb28
    Text: 0.75. 4.2 G H z microwave transistors for class C operation transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


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    30ble CB-3111 CB-294) O-117 CB-3071 O-129 CB-295) ICB-287) C22B BLW27 transistors for oscillators ic 9033 ICB-287 CB-3071 CB-295 TH9023 Cb28 PDF

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


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    0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912 PDF

    Untitled

    Abstract: No abstract text available
    Text: A V A N T Ë K MME IN C D B i m n b h 0 0 0 0 1 1 3 3 E 3 A V A UTO/UTC 2302 Series Thln-Film Cascadable Amplifier 1700 to 2300 MHz FEATURES APPLICATIONS • Frequency Range: 1700 to 2300 MHz • Medium Gain: 10.5 dB Typ • Low VSWR • Temperature Compensated


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    5082-2815

    Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
    Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*


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    1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805 PDF

    T623

    Abstract: CD54-74FCT623 74FCT623AT
    Text: FCT Interface Logic ÎB HARRIS S E M I C O N D U C T O R HARRIS RCA SE INTERSIL CD54/74FCT623 CD54/74FCT623AT July 1990 Octal-Bus Transceiver. 3-State, “ Non-Inverting Type Features: The CD54/74FCT623 and CD54/74FCT623AT octal-bus transceivers use a small-geometry BiCMOS technology. The


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    CD54/74FCT623 CD54/74FCT623AT FCT623) 64/48-mA 700-MHz 54/74FC T623 CD54-74FCT623 74FCT623AT PDF